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Author: Zhang, Zongbao × Publisher: Weinheim : Wiley-VCH ×

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    Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices.
    (Weinheim : Wiley-VCH, 2023) Bai, Shaoling; Yang, Lin; Haase, Katherina; Wolansky, Jakob; Zhang, Zongbao; Tseng, Hsin; Talnack, Felix; Kress, Joshua; Andrade, Jonathan Perez; Benduhn, Johannes; Ma, Ji; Feng, Xinliang; Hambsch, Mike; Mannsfeld, Stefan C. B.
    Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆V ) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large ∆V responses is reported. Exposure to low intensity light (25.7 µW cm ) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 10 ) and memory properties including long retention time (>1.5 × 10  s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.
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    Semitransparent Perovskite Solar Cells with an Evaporated Ultra-Thin Perovskite Absorber
    (Weinheim : Wiley-VCH, 2023) Zhang, Zongbao; Ji, Ran; Jia, Xiangkun; Wang, Shu‐Jen; Deconinck, Marielle; Siliavka, Elena; Vaynzof, Yana
    Metal halide perovskites are of great interest for application in semitransparent solar cells due to their tunable bandgap and high performance. However, fabricating high-efficiency perovskite semitransparent devices with high average visible transmittance (AVT) is challenging because of their high absorption coefficient. Here, a co-evaporation process is adopted to fabricate ultra-thin CsPbI3 perovskite films. The smooth surface and orientated crystal growth of the evaporated perovskite films make it possible to achieve 10 nm thin films with compact and continuous morphology without pinholes. When integrated into a p-i-n device structure of glass/ITO/PTAA/perovskite/PCBM/BCP/Al/Ag with an optimized transparent electrode, these ultra-thin layers result in an impressive open-circuit voltage (VOC) of 1.08 V and a fill factor (FF) of 80%. Consequently, a power conversion efficiency (PCE) of 3.6% with an AVT above 50% is demonstrated, which is the first report for a perovskite device of a 10 nm active layer thickness with high VOC, FF and AVT. These findings demonstrate that deposition by thermal evaporation makes it possible to form compact ultra-thin perovskite films, which are of great interest for future smart windows, light-emitting diodes, and tandem device applications.