Filters

2020 - 20212

More filters

2021 - 20222
Reset filters

Settings

Author: Zimmer, Klaus × DDC: 540 ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Residual Layer Removal of Technical Glass Resulting from Reactive Atmospheric Plasma Jet Etching by Pulsed Laser Irradiation
    (Dordrecht : Springer Science + Business Media B.V., 2020) Kazemi, Faezeh; Arnold, Thomas; Lorenz, Pierre; Ehrhardt, Martin; Zimmer, Klaus
    Ultrahigh-precision machining of glass is indispensable for optical component fabrication and therefore for applications. In this regard, plasma jet assisted chemical etching technologies enable new fabrication processes for enhanced optical functionalities due to their deterministic localized machining capabilities. This technique has been successfully applied to fused silica and silicon. However, applications require specific glass properties are related to complex material compositions of the glass. Hence, reactive plasma etching of these optical glasses is a challenging task. For instance, etching of metal oxide containing glass like N-BK7 by a fluorine-based reactive atmospheric plasma jet (RAPJ) exhibits currently limitations due to the formation of non-volatile reaction products that remain on the glass surface as a layer. Therefore, a procedure consisting of RAPJ etching and laser ablation is proposed for the machining of N-BK7. The capability of laser-based removal of residual layers is compared to water-based solving of the residual layer. After RAPJ etching of N-BK7 using a CF4–O2 gas mixture with an average microwave power of 16 W, the samples are cleaned either by a water-based solvent or by the ablation with a nanosecond-pulsed ultraviolet laser. The laser irradiation with fluences of 2.8 J/cm2 results in a localized removal of the residual layer. It is demonstrated that the roughness of the laser-cleaned N-BK7 surface is similarly low as solvent-based cleaned samples but the pulsed laser enhanced cleaning allows a dry processing at atmospheric pressure as well as a localized processing with a high lateral resolution.
  • Thumbnail Image
    Item
    Dry etching of monocrystalline silicon using a laser-induced reactive micro plasma
    (Amsterdam : Elsevier, 2021) Heinke, Robert; Ehrhardt, Martin; Lorenz, Pierre; Zimmer, Klaus
    Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, optics and photonics due to its high precision material removal with low surface and subsurface damage. These processes, including reactive ion etching (RIE) and plasma etching (PE), are performed at vacuum conditions and provide high selectivity and vertical side wall etched patterns but create high costs and efforts in maintenance due to the required machinery. In contrast to electrically generated plasmas, laser-induced micro plasmas are controllable sources of reactive species in gases at atmospheric pressure that can be used for dry etching of materials. In the present study, we have demonstrated the laser-induced plasma etching of monocrystalline silicon. A Ti:Sapphire laser has been used for igniting an optically pumped plasma in a CF4/O2 gas mixture near atmospheric pressure. The influence of process parameters, like substrate temperature, O2 concentration, plasma-surface distance, etching duration, pulse energy and crystal orientation on etching rate and surface morphology has been investigated. Typical etching rates of 2–12 µm x min−1 can be achieved by varying mentioned parameters with a decreasing etching rate during the process. Different morphologies can be observed due to the parameters set, smooth as well as rough surfaces or even inverted pyramids. The presented etching method provides an approach for precise machining of silicon surfaces with good surface qualities near atmospheric pressure and sufficiently high material removal rates for ultraprecise surface machining. © 2021 The Author(s)