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Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots
2016, Chen, Yan, Zhang, Jiaxiang, Zopf, Michael, Jung, Kyubong, Zhang, Yang, Keil, Robert, Ding, Fei, Schmidt, Oliver G.
Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.
Quantum dot-based broadband optical antenna for efficient extraction of single photons in the telecom O-band
2020, Yang, Jingzhong, Nawrath, Cornelius, Keil, Robert, Joos, Raphael, Zhang, Xi, Höfer, Bianca, Chen, Yan, Zopf, Michael, Jetter, Michael, Portalupi, Simone Luca, Ding, Fei, Michler, Peter, Schmidt, Oliver G.
Long-distance fiber-based quantum communication relies on efficient non-classical light sources operating at telecommunication wavelengths. Semiconductor quantum dots are promising candidates for on-demand generation of single photons and entangled photon pairs for such applications. However, their brightness is strongly limited due to total internal reflection at the semiconductor/vacuum interface. Here we overcome this limitation using a dielectric antenna structure. The non-classical light source consists of a gallium phosphide solid immersion lens in combination with a quantum dot nanomembrane emitting single photons in the telecom O-band. With this device, the photon extraction is strongly increased in a broad spectral range. A brightness of 17% (numerical aperture of 0.6) is obtained experimentally, with a single photon purity of 𝑔(2)(0)=0.049±0.02 at saturation power. This brings the practical implementation of quantum communication networks one step closer.