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    Valence-band density of states and surface electron accumulation in epitaxial SnO2 films
    (College Park : American Physical Society, 2014) Vasheghani Farahani, S.K.; Veal, T.D.; Mudd, J.J.; Scanlon, D.O.; Watson, G.W.; Bierwagen, O.; White, M.E.; Speck, J.S.; McConville, C.F.
    The surface band bending and electronic properties of SnO2(101) films grown on r-sapphire by plasma-assisted molecular beam epitaxy have been studied by Fourier-transform infrared spectroscopy (FTIR), x-ray photoemission spectroscopy (XPS), Hall effect, and electrochemical capacitance-voltage measurements. The XPS results were correlated with density functional theory calculation of the partial density of states in the valence-band and semicore levels. Good agreement was found between theory and experiment with a small offset of the Sn 4d levels. Homogeneous Sb-doped SnO2 films allowed for the calculation of the bulk Fermi level with respect to the conduction-band minimum within the k⋅p carrier statistics model. The band bending and carrier concentration as a function of depth were obtained from the capacitance-voltage characteristics and model space charge calculations of the Mott-Schottky plots at the surface of Sb-doped SnO2 films. It was quantitatively demonstrated that SnO2 films have downward band bending and surface electron accumulation. The surface band bending, unoccupied donor surface-state density, and width of the accumulation region all decrease with increasing Sb concentration.
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    Spatial patterns of dissipative polariton solitons in semiconductor microcavities
    (College Park : American Physical Society, 2015) Chana, J.K.; Sich, M.; Fras, F.; Gorbach, A. V.; Skryabin, D. V.; Cancellieri, E.; Cerda-Méndez, E. A.; Biermann, K.; Hey, R.; Santos, P. V.; Skolnick, M.S.; Krizhanovskii, D.N.
    We report propagating bound microcavity polariton soliton arrays consisting of multipeak structures either along (x) or perpendicular (y) to the direction of propagation. Soliton arrays of up to five solitons are observed, with the number of solitons controlled by the size and power of the triggering laser pulse. The breakup along the x direction occurs when the effective area of the trigger pulse exceeds the characteristic soliton size determined by polariton-polariton interactions. Narrowing of soliton emission in energymomentum space indicates phase locking between adjacent solitons, consistent with numerical modeling which predicts stable multihump soliton solutions. In the y direction, the breakup originates from inhomogeneity across the wave front in the transverse direction which develops into a stable array only in the solitonic regime via phase-dependent interactions of propagating fronts.