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- ItemDiffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets(Cambridge : arXiv, 2016) Jenichen, B.; Hanke, M.; Hilse, M.; Herfort, J.; Trampert, A.; Erwin, S.C.GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe3Si shells exhibit nanofacets. These facets consist of well pronounced Fe3Si{111} planes. Density functional theory reveals that the Si-terminated Fe3Si{111} surface has the lowest energy in agreement with the experimental findings. We can analyze the x-ray diffuse scattering and diffraction of the ensemble of nanowires avoiding the signal of the substrate and poly-crystalline films located between the wires. Fe3Si nanofacets cause streaks in the x-ray reciprocal space map rotated by an azimuthal angle of 30° compared with those of bare GaAs nanowires. In the corresponding TEM micrograph the facets are revealed only if the incident electron beam is oriented along [1 1 ̄ 0] in accordance with the x-ray results. Additional maxima in the x-ray scans indicate the onset of chemical reactions between Fe3Si shells and GaAs cores occurring at increased growth temperatures.
- ItemStructural properties of Co2TiSi films on GaAs(001)(New York : American Institute of Physics, 2016) Jenichen, B.; Herfort, J.; Hanke, M.; Jahn, U.; Kong, X.; Dau, M.T.; Trampert, A.; Kirmse, H.; Erwin, S.C.Co2TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the L21 and B2 structures and considering the influence of non-stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13 nm, these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found L21 and B2 ordered regions, however the [Co]/[Ti]-ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic B2-ordering with the best order parallel to the axes of the columns.
- ItemLattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy(London : BioMed Central, 2012) Davydok, Anton; Breuer, Steffen; Biermanns, Andreas; Geelhaar, Lutz; Pietsch, UllrichUsing out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface even at the initial state of growth, probably caused by the formation of a dislocation network at the Si-to-GaAs interface. In detail, we deduce that during the initial stage, zinc-blende structure GaAs islands grow with a gradually increasing lattice parameter over a transition region of several 10 nm in the growth direction. In contrast, accommodation of the in-plane lattice parameter takes place within a thickness of about 10 nm. As a consequence, the ratio between out-of-plane and in-plane lattice parameters is smaller than the unity in the initial state of growth. Finally the wurtzite-type NWs grow on top of the islands and are free of strain.
- ItemImproved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation(New York : American Institute of Physics, 2017) Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, RaffaellaSuperlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.
- ItemGrowth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy(New York : American Institute of Physics, 2017) Gaucher, S.; Jenichen, B.; Kalt, J.; Jahn, U.; Trampert, A.; Herfort, J.Ferromagnetic Heusler alloys can be used in combination with semiconductors to create spintronic devices. The materials have cubic crystal structures, making it possible to grow lattice-matched heterojunctions by molecular beam epitaxy. However, the development of devices is limited by the difficulty of growing epitaxial semiconductors over metallic surfaces while preventing chemical reactions, a requirement to obtain abrupt interfaces and achieve efficient spin-injection by tunneling. We used a solid-phase epitaxy approach to grow crystalline thin film stacks on GaAs(001) substrates, while preventing interfacial reactions. The crystallized Ge layer forms superlattice regions, which are caused by the migration of Fe and Si atoms into the film. X-ray diffraction and transmission electron microscopy indicate that the trilayers are fully crystalline, lattice-matched, and have ideal interface quality over extended areas.
- ItemStrain engineering of ferroelectric domains in KxNa1−xNbO3 epitaxial layers(Lausanne : Frontiers Media, 2017) Schwarzkopf, Jutta; Braun, Dorothee; Hanke, Michael; Uecker, Reinhard; Schmidbauer, MartinThe application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzburg–Devonshire theory. In this paper, we illustrate the opportunity of ferroelectric domain engineering in the KxNa1−xNbO3 lead-free material system. In particular, the following examples are discussed in detail: (i) Different substrates (NdGaO3, SrTiO3, DyScO3, TbScO3, and GdScO3) are used to systematically tune the incorporated epitaxial strain from compressive to tensile. This can be exploited to adjust the NaNbO3 thin film surface orientation and, concomitantly, the vector of electrical polarization, which rotates from mainly vertical to exclusive in-plane orientation. (ii) In ferroelectric NaNbO3, thin films grown on rare-earth scandate substrates, highly regular stripe domain patterns are observed. By using different film thicknesses, these can be tailored with regard to domain periodicity and vertical polarization component. (iii) A featured potassium concentration of x = 0.9 of KxNa1−xNbO3 thin films grown on (110) NdScO3 substrates favors the coexistence of two equivalent, monoclinic, but differently oriented ferroelectric phases. A complicated herringbone domain pattern is experimentally observed which consists of alternating MC and a1a2 domains. The coexistence of different types of ferroelectric domains leads to polarization discontinuities at the domain walls, potentially enabling high piezoelectric responses. In each of these examples, the experimental results are in excellent agreement with predictions based on the linear elasticity theory.
- ItemEpitaxial growth and characterization of GeTe and GeTe/Sb2Te3 superlattices(Berlin : Humboldt-Universität zu Berlin, 2017) Wang, Rui NingDie epitaktische Wachstum von GeTe Dünnschichten und Sb2Te3/GeTe Übergittern durch Molekularstrahlepitaxie wird auf drei verschiedenen Silizium Oberflächen gezeigt: Si(111)−(7×7), Si(111)−(√3×√3)R30°−Sb, und Si(111)−(1×1)−H. Mit Röntgenstrukturanalyse wird bewiesen, dass die epitaktische Beziehung der GeTe Schicht von der Oberflächepassievierung abhängig ist; auf einer passivierten Fläche können verdrehte Domänen unterdrückt sein. Dieses Verhalten ähnelt dem, welches bei 2D Materialien zu erwarten wäre, und wird auf die Schwäche der Resonanten ungebundenen Zustände zurückgeführt, die durch Peierls Verzerrung noch schwächer werden.
- ItemMolecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction(Berlin : Humboldt-Universität zu Berlin, 2010) Shayduk, RomanThe integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied \emph{in situ} using reflection high energy electron diffraction (RHEED).