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End date: 2019 × Start date: 2019 × End date: 2019 × Start date: 2010 × DDC: 620 × Publisher: New York : American Institute of Physics × Subject: Lattice constants ×

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    The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films
    (New York : American Institute of Physics, 2017) Yuan, Feifei; Iida, Kazumasa; Grinenko, Vadim; Chekhonin, Paul; Pukenas, Aurimas; Skrotzki, Werner; Sakoda, Masahito; Naito, Michio; Sala, Alberto; Putti, Marina; Yamashita, Aichi; Takano, Yoshihiko; Shi, Zhixiang; Nielsch, Kornelius; Hühne, Ruben
    Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.
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    The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films
    (New York : American Institute of Physics, 2014) Kauffmann-Weiss, S.; Hamann, S.; Reichel, L.; Siegel, A.; Alexandrakis, V.; Heller, R.; Schultz, L.; Ludwig, A.; Fähler, S.
    Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.