7 results
Search Results
Now showing 1 - 7 of 7
- ItemAtomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations(Bristol : IOP Publishing, 2012) Murota, Junichi; Sakuraba, Masao; Tillack, BerndOne of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x=0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si1-xGex (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si1−xGex (100), segregation of P atoms is suppressed by using Si2H6 instead of SiH4 at a low temperature of 450 °C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si1−xGex/Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs.
- ItemBa termination of Ge(001) studied with STM(Bristol : IOP Publishing, 2015) Koczorowski, W.; Grzela, T.; Radny, M.W.; Schofield, S.R.; Capellini, G.; Czajka, R.; Schroeder, T.; Curson, N.J.We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer coverages of Ba atoms deposited on Ge(001), enabling the generation of either of two fundamentally distinct interfacial phases, as revealed by scanning tunneling microscopy. Firstly we identify the two key structural phases associated with this adsorption system, namely on-top adsorption and surface alloy formation, by performing a deposition and annealing experiment at a coverage low enough (~0.15 ML) that isolated Ba-related features can be individually resolved. Subsequently we investigate the monolayer coverage case, of interest for passivation schemes of future Ge based devices, for which we find that the thermal evaporation of Ba onto a Ge(001) surface at room temperature results in on-top adsorption. This separation (lack of intermixing) between Ba and Ge layers is retained through successive annealing steps to temperatures of 470, 570, 670 and 770 K although a gradual ordering of the Ba layer is observed at 570 K and above, accompanied by a decrease in Ba layer density. Annealing above 770 K produces the 2D surface alloy phase accompanied by strain relief through monolayer height trench formation. An annealing temperature of 1070 K sees a further change in surface morphology but retention of the 2D surface alloy characteristic. These results are discussed in view of their possible implications for future semiconductor integrated circuit technology.
- ItemMicrostructure evolution during annealing of an SPD- processed supersaturated Cu – 3 at.% Ag alloy(Bristol : IOP Publishing, 2014) Gubicza, J.; Hegedűs, Z.; Lábár, J.L.; Sarma, V.S.; Kauffmann, A.; Freudenberger, J.Supersaturated Cu-3 at.% Ag alloy was processed by rolling at liquid nitrogen temperature and subsequent annealing at 623 K up to 20 min. It was found that after annealing, an inhomogeneous solute atom distribution developed, since the Ag particles with small size and/or large specific interfacial energy were dissolved due to the Gibbs-Thomson effect. In the region where the solute concentration increased, a high dislocation density was retained in the Cu matrix even after annealing, while in the region where the Ag solute content did not increase, the dislocation density decreased by more than one order of magnitude. Therefore, in the cryorolled and annealed samples, heterogeneous microstructures were developed where both the dislocation density and the solute concentration varied considerably.
- ItemGrowth and applications of GeSn-related group-IV semiconductor materials(Bristol : IOP Publishing, 2015) Zaima, Shigeaki; Nakatsuka, Osamu; Taoka, Noriyuki; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, MitsuoWe review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.
- ItemThermal stability and phase transformations of martensitic Ti-Nb alloys(Bristol : IOP Publishing, 2013) Bönisch, Matthias; Calin, Mariana; Waitz, Thomas; Panigrahi, Ajit; Zehetbauer, Michael; Gebert, Annett; Skrotzki, Werner; Eckert, JürgenAiming at understanding the governing microstructural phenomena during heat treatments of Ni-free Ti-based shape memory materials for biomedical applications, a series of Ti-Nb alloys with Nb concentrations up to 29 wt% was produced by cold-crucible casting, followed by homogenization treatment and water quenching. Despite the large amount of literature available concerning the thermal stability and ageing behavior of Ti-Nb alloys, only few studies were performed dealing with the isochronal transformation behavior of initially martensitic Ti-Nb alloys. In this work, the formation of martensites (α′ and α″) and their stability under different thermal processing conditions were investigated by a combination of x-ray diffraction, differential scanning calorimetry, dilatometry and electron microscopy. The effect of Nb additions on the structural competition in correlation with stable and metastable phase diagrams was also studied. Alloys with 24 wt% Nb or less undergo a transformation sequence on heating from room temperature to 1155 K. In alloys containing >24 wt% Nb α″ martensitically reverts back to β0, which is highly unstable against chemical demixing by formation of isothermal ωiso. During slow cooling from the single phase β domain α precipitates and only very limited amounts of α″ martensite form.
- ItemDeformation at ambient and high temperature of in situ Laves phases-ferrite composites(Bristol : IOP Publishing, 2014) Donnadieu, Patricia; Pohlmann, Carsten; Scudino, Sergio; Blandin, Jean-Jacques; Surreddi, Kumar Babu; Eckert, JürgenThe mechanical behavior of a Fe80Zr10Cr10 alloy has been studied at ambient and high temperature. This Fe80Zr10Cr10 alloy, whoose microstructure is formed by alternate lamellae of Laves phase and ferrite, constitutes a very simple example of an in situ CMA phase composite. The role of the Laves phase type was investigated in a previous study while the present work focuses on the influence of the microstructure length scale owing to a series of alloys cast at different cooling rates that display microstructures with Laves phase lamellae width ranging from ∼50 nm to ∼150 nm. Room temperature compression tests have revealed a very high strength (up to 2 GPa) combined with a very high ductility (up to 35%). Both strength and ductility increase with reduction of the lamella width. High temperature compression tests have shown that a high strength (900 MPa) is maintained up to 873 K. Microstructural study of the deformed samples suggests that the confinement of dislocations in the ferrite lamellae is responsible for strengthening at both ambient and high temperature. The microstructure scale in addition to CMA phase structural features stands then as a key parameter for optimization of mechanical properties of CMA in situ composites.
- ItemIsotropic multi-gap superconductivity in BaFe1.9Pt0.1As2 from thermal transport and spectroscopic measurements(Bristol : IOP Publishing, 2014) Ziemak, Steven; Kirshenbaum, K.; Saha, S.R.; Hu, R.; Reid, J.-Ph.; Gordon, R.; Taillefer, L.; Evtushinsky, D.; Thirupathaiah, S.; Büchner, B.; Borisenko, S.V.; Ignatov, A.; Kolchmeyer, D.; Blumberg, G.; Paglione, J.Thermal conductivity, point contact spectroscopy, angle-resolved photoemission and Raman spectroscopy measurements were performed on BaFe1.9Pt0.1As2 single crystals obtained from the same synthesis batch in order to investigate the superconducting energy gap structure using multiple techniques. Low temperature thermal conductivity was measured in the superconducting state as a function of temperature and magnetic field, revealing an absence of quasiparticle excitations in the $T\to 0$ limit up to 15 T applied magnetic fields. Point-contact Andreev reflection spectroscopy measurements were performed as a function of temperature using the needle-anvil technique, yielding features in the conductance spectra at both 2.5 meV and 7.0 meV scales consistent with a multi-gap scenario. Angle-resolved photoemission spectroscopy probed the electronic band structure above and below the superconducting transition temperature of Tc = 23 K, revealing an isotropic gap of magnitude $\sim 3$ meV on both electron and hole pockets. Finally, Raman spectroscopy was used to probe quasiparticle excitations in multiple channels, showing a threshold energy scale of 3 meV below Tc. Overall, we find strong evidence for an isotropic gap structure with no nodes or deep minima in this system, with a 3 meV magnitude gap consistently observed and a second, larger gap suggested by point-contact spectroscopy measurements. We discuss the implications that the combination of these results reveal about the superconducting order parameter in the BaFe2−xPtxAs2 doping system and how this relates to similar substituted iron pnictides.