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Now showing 1 - 10 of 33
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    Multiple lobes in the far-field distribution of terahertz quantum-cascade lasers due to self-interference
    (New York : American Institute of Physics, 2016) Röben, B.; Wienold, M.; Schrottke, L.; Grahn, H.T.
    The far-field distribution of the emission intensity of terahertz (THz) quantumcascade lasers (QCLs) frequently exhibits multiple lobes instead of a single-lobed Gaussian distribution. We show that such multiple lobes can result from selfinterference related to the typically large beam divergence of THz QCLs and the presence of an inevitable cryogenic operation environment including optical windows. We develop a quantitative model to reproduce the multiple lobes. We also demonstrate how a single-lobed far-field distribution can be achieved.
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    The influence of Mg doping on the nucleation of self-induced GaN nanowires
    (New York : American Institute of Physics, 2012) Limbach, F.; Caterino, R.; Gotschke, T.; Stoica, T.; Calarco, R.; Geelhaar, L.; Riechert, H.
    GaN nanowires were grown without any catalyst by plasma-assisted molecular beam epitaxy. Under supply of Mg, nanowire nucleation is faster, the areal density of wires increases to a higher value, and nanowire coalescence is more pronounced than without Mg. During nanowire nucleation the Ga desorption was monitored insitu by line-of-sight quadrupolemass spectrometry for various substrate temperatures. Nucleation energies of 4.0±0.3 eV and 3.2±0.3 eV without and with Mg supply were deduced, respectively. This effect has to be taken into account for the fabrication of nanowire devices and could be employed to tune the NW areal density.
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    Roles of hydrogenation, annealing and field in the structure and magnetic entropy change of Tb-based bulk metallic glasses
    (New York : American Institute of Physics, 2013) Luo, Qiang; Schwarz, Björn; Mattern, Norbert; Shen, Jun; Eckert, Jürgen
    The reduction of open-volume regions in Tb-based metallic glass (MG) by annealing and hydrogen charging was found to rearrange the atomic structure and tune the magnetic behaviors. After crystallization, the magnetic structure and magnetic entropy change (MEC) alters due to the structural transformation, and a plateau-like-MEC behavior can be obtained. The hydrogen concentration after charging at 1mA/cm2 for 576 h reaches as high as 3290 w-ppm. The magnetization behavior and the MEC change due to the modification of the exchange interaction and the random magnetic anisotropy (RMA) upon hydrogenation. At low temperatures, irreversible positive MEC was obtained, which is related to the internal entropy production. The RMA-to-exchange ratio acts as a switch to control the irreversible entropy production channel and the reversible entropy transfer channel. The field dependence of the MEC is discussed in term of the competition among Zeeman energy, exchange interaction and RMA.
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    Pronounced ductility in CuZrAl ternary bulk metallic glass composites with optimized microstructure through melt adjustment
    (New York : American Institute of Physics, 2012) Liu, Zengqian; Li, Ran; Liu, Gang; Song, Kaikai; Pauly, Simon; Zhang, Tao; Eckert, Jürgen
    Microstructures and mechanical properties of as-cast Cu47.5Zr47.5Al5 bulk metallic glass composites are optimized by appropriate remelting treatment of master alloys. With increasing remelting time, the alloys exhibit homogenized size and distribution of in situ formed B2 CuZr crystals. Pronounced tensile ductility of ∼13.6% and work-hardening ability are obtained for the composite with optimized microstructure. The effect of remelting treatment is attributed to the suppressed heterogeneous nucleation and growth of the crystalline phase from undercooled liquid, which may originate from the dissolution of oxides and nitrides as well as from the micro-scale homogenization of the melt.
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    Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces
    (New York : American Institute of Physics, 2017) Bragaglia, Valeria; Mio, Antonio M.; Calarco, Raffaella
    A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.
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    Schottky contacts to In2O3
    (New York : American Institute of Physics, 2014) von Wenckstern, H.; Splith, D.; Schmidt, F.; Grundmann, M.; Bierwagen, O.; Speck, J.S.
    n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.
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    Magnetic properties of GaAs-Fe3Si core-shell nanowires — A comparison of ensemble and single nanowire investigation
    (New York : American Institute of Physics, 2017) Hilse, Maria; Jenichen, Bernd; Herfort, Jens
    On the basis of semiconductor-ferromagnet GaAs-Fe3Si core-shell nanowires (Nws) we compare the facilities of magnetic Nw ensemble measurements by superconducting quantum interference device magnetometry versus investigations on single Nws by magnetic force microscopy and computational micromagnetic modeling. Where a careful analysis of ensemble measurements backed up by transmission electron microscopy gave no insights on the properties of the Nw shells, single Nw investigation turned out to be absolutely essential.
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    Correlation between the microstructures and the deformation mechanisms of CuZr-based bulk metallic glass composites
    (New York : American Institute of Physics, 2013) Song, K.K.; Pauly, S.; Sun, B.A; Tan, J.; Stoica, M.; Kühn, U.; Eckert, J.
    The variation of the transformation-mediated deformation behavior with microstructural changes in CuZr-based bulk metallic glass composites is investigated. With increasing crystalline volume fraction, the deformation mechanism gradually changes from a shear-banding dominated process as evidenced by a chaotic serrated flow behavior, to being governed by a martensitic transformation with a pronounced elastic-plastic stage, resulting in different plastic deformations evolving into a self-organized critical state characterized by the power-law distribution of shear avalanches. This is reflected in the stress-strain curves by a single-to-"double"-to-"triple"- double yielding transition and by different mechanical properties with different serrated flow characteristics, which are interpreted based on the microstructural evolutions and a fundamental energy theorem. Our results can assist in understanding deformation behaviors for high-performance metastable alloys.
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    The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films
    (New York : American Institute of Physics, 2017) Yuan, Feifei; Iida, Kazumasa; Grinenko, Vadim; Chekhonin, Paul; Pukenas, Aurimas; Skrotzki, Werner; Sakoda, Masahito; Naito, Michio; Sala, Alberto; Putti, Marina; Yamashita, Aichi; Takano, Yoshihiko; Shi, Zhixiang; Nielsch, Kornelius; Hühne, Ruben
    Epitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.
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    Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM
    (New York : American Institute of Physics, 2016) Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.
    Ferroelectric capacitors made by lead zirconate titanate (PZT) thin films and iridium electrodes are fabricated on three-dimensional structures and their properties are investigated. The iridium films are grown by Plasma Enhanced MOCVD at 300°C, while the PZT films are deposited by thermal MOCVD at different process temperatures between 450°C and 550°C. The step coverage and composition uniformity of the PZT films on trench holes and lines are investigated. Phase separation of PZT films has been observed on both 3D and planar structures. No clear dependences of the crystallization and composition of PZT on 3D structure topography have been found. STEM EDX line scans show a uniform Zr/(Zr+Ti) concentration ratio along the 3D profile but the variation of the Pb/(Zr+Ti) concentration ratio is large because of the phase separation. 3D ferroelectric capacitors show good ferroelectric properties but have much higher leakage currents than 2D ferroelectric capacitors. Nevertheless, during cycling tests the degradation of the remnant polarization between 2D and 3D capacitors is similar after 109 switching cycles. In addition, the sidewalls and bottoms of the 3D structures seem to have comparable remnant polarizations with the horizontal top surfaces.