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- ItemRoles of hydrogenation, annealing and field in the structure and magnetic entropy change of Tb-based bulk metallic glasses(New York : American Institute of Physics, 2013) Luo, Qiang; Schwarz, Björn; Mattern, Norbert; Shen, Jun; Eckert, JürgenThe reduction of open-volume regions in Tb-based metallic glass (MG) by annealing and hydrogen charging was found to rearrange the atomic structure and tune the magnetic behaviors. After crystallization, the magnetic structure and magnetic entropy change (MEC) alters due to the structural transformation, and a plateau-like-MEC behavior can be obtained. The hydrogen concentration after charging at 1mA/cm2 for 576 h reaches as high as 3290 w-ppm. The magnetization behavior and the MEC change due to the modification of the exchange interaction and the random magnetic anisotropy (RMA) upon hydrogenation. At low temperatures, irreversible positive MEC was obtained, which is related to the internal entropy production. The RMA-to-exchange ratio acts as a switch to control the irreversible entropy production channel and the reversible entropy transfer channel. The field dependence of the MEC is discussed in term of the competition among Zeeman energy, exchange interaction and RMA.
- ItemBa termination of Ge(001) studied with STM(Bristol : IOP Publishing, 2015) Koczorowski, W.; Grzela, T.; Radny, M.W.; Schofield, S.R.; Capellini, G.; Czajka, R.; Schroeder, T.; Curson, N.J.We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer coverages of Ba atoms deposited on Ge(001), enabling the generation of either of two fundamentally distinct interfacial phases, as revealed by scanning tunneling microscopy. Firstly we identify the two key structural phases associated with this adsorption system, namely on-top adsorption and surface alloy formation, by performing a deposition and annealing experiment at a coverage low enough (~0.15 ML) that isolated Ba-related features can be individually resolved. Subsequently we investigate the monolayer coverage case, of interest for passivation schemes of future Ge based devices, for which we find that the thermal evaporation of Ba onto a Ge(001) surface at room temperature results in on-top adsorption. This separation (lack of intermixing) between Ba and Ge layers is retained through successive annealing steps to temperatures of 470, 570, 670 and 770 K although a gradual ordering of the Ba layer is observed at 570 K and above, accompanied by a decrease in Ba layer density. Annealing above 770 K produces the 2D surface alloy phase accompanied by strain relief through monolayer height trench formation. An annealing temperature of 1070 K sees a further change in surface morphology but retention of the 2D surface alloy characteristic. These results are discussed in view of their possible implications for future semiconductor integrated circuit technology.
- ItemMicrostructure evolution during annealing of an SPD- processed supersaturated Cu – 3 at.% Ag alloy(Bristol : IOP Publishing, 2014) Gubicza, J.; Hegedűs, Z.; Lábár, J.L.; Sarma, V.S.; Kauffmann, A.; Freudenberger, J.Supersaturated Cu-3 at.% Ag alloy was processed by rolling at liquid nitrogen temperature and subsequent annealing at 623 K up to 20 min. It was found that after annealing, an inhomogeneous solute atom distribution developed, since the Ag particles with small size and/or large specific interfacial energy were dissolved due to the Gibbs-Thomson effect. In the region where the solute concentration increased, a high dislocation density was retained in the Cu matrix even after annealing, while in the region where the Ag solute content did not increase, the dislocation density decreased by more than one order of magnitude. Therefore, in the cryorolled and annealed samples, heterogeneous microstructures were developed where both the dislocation density and the solute concentration varied considerably.