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- ItemOn the electrolyte convection around a hydrogen bubble evolving at a microelectrode under the influence of a magnetic field(Pennington, NJ : ECS, 2016) Baczyzmalski, Dominik; Karnbach, Franziska; Yang, Xuegeng; Mutschke, Gerd; Uhlemann, Margitta; Eckert, Kerstin; Cierpka, ChristianWater electrolysis was carried out in a 1 M H2SO4 solution under different potentiostatic conditions in the presence of a magnetic field oriented normal to the horizontal microelectrode (100 μm in diameter). The imposed magnetohydrodynamic (MHD) electrolyte flow around the evolving hydrogen bubble was studied to clarify the effect on the detachment of the bubble from the electrode and the mass transfer toward the electrode. Different particle imaging and tracking techniques were applied to measure the three-dimensional flow in the bulk of the cell as well as in close vicinity of the evolving bubble. The periodic bubble growth cycle was analyzed by measurements of the current oscillations and microscopic high-speed imaging. In addition, a numerical study of the flow was conducted to support the experimental results. The results demonstrate that the MHD flow imposes only a small stabilizing force on the bubble. However, the observed secondary flow enhances the mass transfer toward the electrode and may reduce the local supersaturation of dissolved hydrogen.
- ItemRole of 1,3-dioxolane and LiNO3 addition on the long term stability of nanostructured silicon/carbon anodes for rechargeable lithium batteries(Pennington, NJ : ECS, 2016) Jaumann, Tony; Balach, Juan; Klose, Markus; Oswald, Steffen; Eckert, Jürgen; Giebeler, LarsIn order to utilize silicon as alternative anode for unfavorable lithium metal in lithium – sulfur (Li–S) batteries, a profound understanding of the interfacial characteristics in ether-based electrolytes is required. Herein, the solid electrolyte interface (SEI) of a nanostructured silicon/carbon anode after long-term cycling in an ether-based electrolyte for Li–S batteries is investigated. The role of LiNO3 and 1,3-dioxolane (DOL) in dimethoxy ethane (DME) solutions as typically used electrolyte components on the electrochemical performance and interfacial characteristics on silicon are evaluated. Because of the high surface area of our nanostructured electrode owing to the silicon particle size of around 5 nm and the porous carbon scaffold, the interfacial characteristics dominate the overall electrochemical reversibility opening a detailed analysis. We show that the use of DME/DOL solutions under ambient temperature causes higher degradation of electrolyte components compared to carbonate-based electrolytes used for Li–ion batteries (LIB). This behavior of DME/DOL mixtures is associated with different SEI component formation and it is demonstrated that LiNO3 addition can significantly stabilize the cycle performance of nanostructured silicon/carbon anodes. A careful post-mortem analysis and a discussion in context to carbonate-based electrolyte solutions helps to understand the degradation mechanism of silicon-based anodes in rechargeable lithium-based batteries.
- ItemInvestigation of the copper gettering mechanism of oxide precipitates in silicon(Pennington, NJ : ECS, 2015) Kissinger, G.; Kot, D.; Klingsporn, M.; Schubert, M.A.; Sattler, A.; Müller, T.One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet clarified is that it was not possible to identify the presence and measure the copper concentration in the vicinity of oxide precipitates. To overcome the problem we used a 14.5 nm thick thermal oxide layer as a model system for an oxide precipitate to localize the place where the copper is collected. We also analyzed a plate-like oxide precipitate by EDX and EELS and compared the results with the analysis carried out on the oxide layer. It is demonstrated that both the interface between the oxide precipitate being SiO2 and the silicon matrix and the interface between the thermal oxide and silicon consist of a 2–3 nm thick SiO layer. As the results of these experiments also show that copper segregates at the SiO interface layer of the thermal oxide it is concluded that gettering of copper by oxide precipitates is based on segregation of copper to the SiO interface layer.
- ItemSelective lateral germanium growth for local GeOI fabrication(Pennington, NJ : ECS, 2014) Yamamoto, Yuji; Schubert, Markus Andreas; Reich, Christian; Bernd Tillack, Bernd TillackHigh quality local Germanium-on-oxide (GeOI) wafers are fabricated using selective lateral germanium (Ge) growth technique by a single wafer reduced pressure chemical vapor deposition system. Mesa structures of 300 nm thick epitaxial silicon (Si) interposed by SiO2 cap and buried oxide are prepared. HCl vapor phase etching of Si is performed prior to selective Ge growth to remove a part of the epitaxial Si to form cavity under the mesa. By following selective Ge growth, the cavity was filled. Cross section TEM shows dislocations of Ge which are located near Si / Ge interface only. By plan view TEM, it is shown that the dislocations in Ge which direct to SiO2 cap or to buried-oxide (BOX) are located near the interface of Si and Ge. The dislocations which run parallel to BOX are observed only in [110] and [1–10] direction resulting Ge grown toward [010] direction contains no dislocations. This mechanism is similar to aspect-ratio-trapping but here we are using a horizontal approach, which offers the option to remove the defective areas by standard structuring techniques. A root mean square of roughness of ∼0.2 nm is obtained after the SiO2 cap removal. Tensile strain in the Ge layer is observed due to higher thermal expansion coefficient of Ge compared to Si and SiO2.
- ItemDislocation generation and propagation during flash lamp annealing(Pennington, NJ : ECS, 2015) Kissinger, G.; Kot, D.; Schubert, M.A.; Sattler, A.Dislocation generation and propagation during flash lamp annealing for 20 ms was investigated using wafers with sawed, ground, and etched surfaces. Due to the thermal stress resulting from the temperature profiles generated by the flash pre-existing dislocations propagate into the wafer from both surfaces during flash lamp annealing. A dislocation free zone was observed around 700 μm depth below the surface of a 900 μm thick sawed wafer. The dislocation propagation can be well described by a three-dimensional mechanical model. It was further demonstrated that in wafers being initially free of dislocations no dislocations are generated during flash lamp annealing.