2014, von Wenckstern, H., Splith, D., Schmidt, F., Grundmann, M., Bierwagen, O., Speck, J.S.

n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

2014, Vasheghani Farahani, S.K., Veal, T.D., Mudd, J.J., Scanlon, D.O., Watson, G.W., Bierwagen, O., White, M.E., Speck, J.S., McConville, C.F.

The surface band bending and electronic properties of SnO2(101) films grown on r-sapphire by plasma-assisted molecular beam epitaxy have been studied by Fourier-transform infrared spectroscopy (FTIR), x-ray photoemission spectroscopy (XPS), Hall effect, and electrochemical capacitance-voltage measurements. The XPS results were correlated with density functional theory calculation of the partial density of states in the valence-band and semicore levels. Good agreement was found between theory and experiment with a small offset of the Sn 4d levels. Homogeneous Sb-doped SnO2 films allowed for the calculation of the bulk Fermi level with respect to the conduction-band minimum within the k⋅p carrier statistics model. The band bending and carrier concentration as a function of depth were obtained from the capacitance-voltage characteristics and model space charge calculations of the Mott-Schottky plots at the surface of Sb-doped SnO2 films. It was quantitatively demonstrated that SnO2 films have downward band bending and surface electron accumulation. The surface band bending, unoccupied donor surface-state density, and width of the accumulation region all decrease with increasing Sb concentration.

2014, Wofford, J.M., Oliveira Jr, M.H., Schumann, T., Jenichen, B., Ramsteiner, M., Jahn, U., Fölsch, S., Lopes, J.M.J., Riechert, H.

Graphene is grown by molecular beam epitaxy using epitaxial Ni films on MgO(111) as substrates. Raman spectroscopy and scanning tunneling microscopy reveal the graphene films to have few crystalline defects. While the layers are ultra-smooth over large areas, we find that Ni surface features lead to local non-uniformly thick graphene inclusions. The influence of the Ni surface structure on the position and morphology of these inclusions strongly suggests that multilayer graphene on Ni forms at the interface of the first complete layer and metal substrate in a growth-from-below mechanism. The interplay between Ni surface features and graphene growth behavior may facilitate the production of films with spatially resolved multilayer inclusions through engineered substrate surface morphology.

2013, Fromm, F., Oliveira Jr, M.H., Molina-Sánchez, A., Hundhausen, M., Lopes, J.M.J., Riechert, H., Wirtz, L., Seyller, T.

We report a Raman study of the so-called buffer layer with (6 3 x 6 3)R30 periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.

2013, Jenichen, B., Hentschel, T., Herfort, J., Kong, X., Trampert, A., Zizak, I.

Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L21 and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneities, influencing long-range order. An average L21 ordering of up to 65% was measured by grazing-incidence XRD. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were imaged using dark-field TEM with superlattice reflections and shown to correspond to variations of the Co/Fe ratio.

2014, Kolobov, A.V., Kim, D.J., Giussani, A., Fons, P., Tominaga, J., Calarco, R., Gruverman, A.

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

2014, Wienold, M., Röben, B., Schrottke, L., Grahn, H.T.

We report on a broad-band terahertz quantum-cascade laser (QCL) with a long Fabry-Pérot ridge cavity, for which the tuning range of the individual laser modes exceeds the mode spacing. While a spectral range of approximately 60 GHz (2 cm−1) is continuously covered by current and temperature tuning, the total emission range spans more than 270 GHz (9 cm−1). Within certain operating ranges, we found evidence for stable frequency comb operation of the QCL. An experimental technique is presented to characterize frequency comb operation, which is based on the self-mixing effect.

2013, Lari, L., Ross, I.M., Walther, T., Black, K., Cheze, C., Geelhaar, L., Riechert, H., Chalker, P.R.

A combination of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) was adopted to fabricate GaN-based core/shell NW structures. ALD was used to deposit a HfO2 shell of onto the MBE grown GaN NWs. Electron transparent samples were prepared by focussed ion beam methods and characterized using state-of-the-art analytical transmission and scanning transmission electron microscopy. The polycrystalline coating was found to be uniform along the whole length of the NWs. Photoluminescence and Raman spectroscopy analysis confirms that the HfO2 ALD coating does not add any structural defect when deposited on the NWs.

2013, Bowlan, P., Kuehn, W., Reimann, K., Woerner, M., Elsaesser, T., Hey, R., Flytzanis, C.

With strong THz pulses, we measure ultrafast transport of electrons, holes, and an electron-hole plasma in GaAs. The transition from ballistic to drift-like transport is strongly influenced by electron-hole scattering.

2014, Wienold, M., Röben, B., Schrottke, L., Sharma, R., Tahraoui, A., Biermann, K., Grahn, H.T.

Currently, different competing waveguide and resonator concepts exist for terahertz quantum-cascade lasers (THz QCLs). We examine the continuous-wave (cw) performance of THz QCLs with single-plasmon (SP) and metal-metal (MM) waveguides fabricated from the same wafer. While SP QCLs are superior in terms of output power, the maximum operating temperature for MM QCLs is typically much higher. For SP QCLs, we observed cw operation up to 73 K as compared to 129 K for narrow (≤ 15 μm) MM QCLs. In the latter case, single-mode operation and a narrow beam profile were achieved by applying third-order distributed-feedback gratings and contact pads which are optically insulated from the intended resonators. We present a quantitative analytic model for the beam profile, which is based on experimentally accessible parameters.