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- ItemAnalysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films(Basel : MDPI AG, 2020) Shipulin, I.; Richter, S.; Thomas, A.A.; Nielsch, K.; Hühne, R.; Martovitsky, V.We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.
- ItemHigh temperature behavior of rual thin films on piezoelectric CTGS and LGS substrates(Basel : MDPI AG, 2020) Seifert, M.This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca3TaGa3Si2O14 (CTGS) and La3Ga5SiO14 (LGS) substrates. RuAl thin films with AlN or SiO2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In somefilms, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO2 barrier layer and up to 800 °C in air using a SiO2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.
- ItemPhase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates(Basel : MDPI AG, 2020) Seifert, M.; Lattner, E.; Menzel, S.B.; Oswald, S.; Gemming, T.Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.
- ItemFemtosecond spectroscopy in a nearly optimally doped Fe-based superconductors FeSe0.5Te0.5 and Ba(Fe 1-xCox)2As2/Fe thin film(Bristol : Institute of Physics Publishing, 2014) Bonavolontà , C.; Parlato, L.; De, Lisio, C.; Valentino, M.; Pepe, G.P.; Kazumasa, I.; Kurth, F.; Bellingeri, E.; Pallecchi, I.; Putti, M.; Ferdeghini, C.; Ummarino, G.A.; Laviano, F.Femtosecond spectroscopy has been used to investigate the quasi-particle relaxation times in nearly optimally doped Fe-based superconductors FeSe 0.5Te0.5 and optimally doped Ba-122 thin films growth on a Fe buffer layer. Experimental results concerning the temperature dependence of the relaxation time of such pnictides both in the superconducting state are now presented and discussed. Modelling the T-dependence of relaxation times an estimation of both electron-phonon constant and superconducting energy gap in the excitation spectrum of both Fe(Se,Te) and Ba-122 compounds is obtained.
- ItemIncorporation of nitrogen into TiO2 thin films during PVD processes(Bristol : Institute of Physics Publishing, 2014) Asenova, I.; Manova, D.; Mändl, S.In this paper we investigate the possibility of incorporating nitrogen into amorphous, photocatalytic TiO2 thin films, prepared at room temperature, during the growth process. The aim is to reduce the bandgap of the UV active thin films. Physical vapor deposition experiments employing a titanium vacuum arc with gas backfill ranging from pure oxygen to pure nitrogen, are carried out. The resulting films are characterized for chemical composition, phase composition, optical properties and hydrophilicity in order to determine a correlation between gas composition and thin film properties. The experimental results point that a visible change in the band structure of the deposited layers is achieved.
- ItemCombinatorial synthesis of (YxGd1-x)Ba2Cu3Ox superconducting thin films(Amsterdam [u.a.] : Elsevier, 2012) Kirchner, A.; Erbe, M.; Freudenberg, T.; Hühne, R.; Feys, J.; Van Driessche, I.; Schultz, L.; Holzapfel, B.Environmentally friendly water-based YBa2Cu3Ox (YBCO) and GdBa2Cu3Ox (GdBCO) precursor solutions were synthesized to realize thin films by chemical solution deposition. Pure YBCO and GdBCO precursor solutions were used for ink plotting on SrTiO3 substrates and subsequent thermal treatment at the corresponding crystallization temperature. Phase formation of Gd123 requires a higher crystallization temperature of 840 °C compared to the Y123 phase. The critical temperature of YBCO films is about 92 K with a sharp transition into the superconducting state. Micro liter sized ink volumes of YBCO and GdBCO were successfully mixed for two-dimensional ink plotting of a (YxGd1-x)Ba2Cu3Ox film library. A homogeneous surface and no indication of a-axis growth were found in all mixed films.
- ItemGlow discharge optical emission spectrometry for quantitative depth profiling of CIGS thin-films(Cambridge : Royal Society of Chemistry, 2019) Kodalle, T.; Greiner, D.; Brackmann, V.; Prietzel, K.; Scheu, A.; Bertram, T.; Reyes-Figueroa, P.; Unold, T.; Abou-Ras, D.; Schlatmann, R.; Kaufmann, C.A.; Hoffmann, V.Determining elemental distributions dependent on the thickness of a sample is of utmost importance for process optimization in different fields e.g. from quality control in the steel industry to controlling doping profiles in semiconductor labs. Glow discharge optical emission spectrometry (GD-OES) is a widely used tool for fast measurements of depth profiles. In order to be able to draw profound conclusions from GD-OES profiles, one has to optimize the measurement conditions for the given application as well as to ensure the suitability of the used emission lines. Furthermore a quantification algorithm has to be implemented to convert the measured properties (intensity of the emission lines versus sputtering time) to more useful parameters, e.g. the molar fractions versus sample depth (depth profiles). In this contribution a typical optimization procedure of the sputtering parameters is adapted to the case of polycrystalline Cu(In,Ga)(S,Se)2 thin films, which are used as absorber layers in solar cell devices, for the first time. All emission lines used are shown to be suitable for the quantification of the depth profiles and a quantification routine based on the assumption of constant emission yield is used. The accuracy of this quantification method is demonstrated on the basis of several examples. The bandgap energy profile of the compound semiconductor, as determined by the elemental distributions, is compared to optical measurements. The depth profiles of Na-the main dopant in these compounds-are correlated with measurements of the open-circuit voltage of the corresponding devices, and the quantification of the sample depth is validated by comparison with profilometry and X-ray fluorescence measurements.
- ItemMagnetically induced anisotropy of flux penetration into strong-pinning superconductor/ferromagnet bilayers(Bristol : Institute of Physics Publishing, 2019) Simmendinger, J.; Hanisch, J.; Bihler, M.; Ionescu, A.M.; Weigand, M.; Sieger, M.; Hühne, R.; Rijckaert, H.; Van Driessche, I.; Schütz, G.; Albrecht, J.We studied the impact of soft ferromagnetic permalloy (Py) on the shielding currents in a strong-pinning superconductor - YBa2Cu3O7-δ with Ba2Y(Nb/Ta)O6 nano-precipitates - by means of scanning transmission x-ray microscopy. Typically and in particular when in the thin film limit, superconductor/ferromagnet (SC/FM) bilayers exhibit isotropic properties of the flux line ensemble at all temperatures. However, in elements with small aspect ratio a significant anisotropy in flux penetration is observed. We explain this effect by local in-plane fields arising from anisotropic magnetic stray fields originated by the ferromagnet. This leads to direction-dependent motion of magnetic vortices inside the SC/FM bilayer. Our results demonstrate that small variations of the magnetic properties can have huge impact on the superconductor.
- ItemUniversal scaling behavior of the upper critical field in strained FeSe0.7Te0.3 thin films(Bristol : Institute of Physics Publishing, 2018) Yuan, F.; Grinenko, V.; Iida, K.; Richter, S.; Pukenas, A.; Skrotzki, W.; Sakoda, M.; Naito, M.; Sala, A.; Putti, M.; Yamashita, A.; Takano, Y.; Shi, Z.; Nielsch, K.; Hühne, R.Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field H c2 at the superconducting transition temperature T c (i.e. -dH c2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes T c in a broad range, while the composition and disorder are almost unchanged. We show that -dH c2/dT scales linearly with T c, indicating that FeSe0.7Te0.3 follows the same universal behavior as observed for pnictide FBS. The observed behavior is consistent with a multiband superconductivity paired by interband interaction such as sign change s ± superconductivity.
- ItemThickness dependence of the anomalous Nernst effect and the Mott relation of Weyl semimetal Co2MnGa thin films(College Park, MD : American Physical Society, 2020) Park, G.-H.; Reichlova, H.; Schlitz, R.; Lammel, M.; Markou, A.; Swekis, P.; Ritzinger, P.; Kriegner, D.; Noky, J.; Gayles, J.; Sun, Y.; Felser, C.; Nielsch, K.; Goennenwein, S.T.B.; Thomas, A.We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 μV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magnetothermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magnetothermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.