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    Starspots
    (Berlin : Springer Verlag, 2009) Strassmeier, K.G.
    Starspots are created by local magnetic fields on the surfaces of stars, just as sunspots. Their fields are strong enough to suppress the overturning convective motion and thus block or redirect the flow of energy from the stellar interior outwards to the surface and consequently appear as locally cool and therefore dark regions against an otherwise bright photosphere (Biermann in Astronomische Nachrichten 264:361, 1938; Z Astrophysik 25:135, 1948). As such, starspots are observable tracers of the yet unknown internal dynamo activity and allow a glimpse into the complex internal stellar magnetic field structure. Starspots also enable the precise measurement of stellar rotation which is among the key ingredients for the expected internal magnetic topology. But whether starspots are just blown-up sunspot analogs, we do not know yet. This article is an attempt to review our current knowledge of starspots. A comparison of a white-light image of the Sun (G2V, 5 Gyr) with a Doppler image of a young solar-like star (EK Draconis; G1.5V, age 100 Myr, rotation 10 × Ω Sun) and with a mean-field dynamo simulation suggests that starspots can be of significantly different appearance and cannot be explained with a scaling of the solar model, even for a star of same mass and effective temperature. Starspots, their surface location and migration pattern, and their link with the stellar dynamo and its internal energy transport, may have far reaching impact also for our understanding of low-mass stellar evolution and formation. Emphasis is given in this review to their importance as activity tracers in particular in the light of more and more precise exoplanet detections around solar-like, and therefore likely spotted, host stars. © 2009 Springer-Verlag.
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    Characteristics of austenitic stainless steel nitrided in a hybrid glow discharge plasma
    (New York, NY : Springer, 2009) Oliveira, R.M.; Ueda, M.; Silva, L.L.G.; Reuther, H.; Lepienski, C.M.
    A nitriding process based on two distinct nitrogen glow discharge modes, with sample temperatures ranging from 380 °Cto480°C, was employed to treat the surface of austenitic stainless steel (SS 304). The temperature is controlled exclusively by switching the operation conditions of the discharges. First mode of operation is the conventional one, named cathodic, which runs at higher pressure values (1 mbar) in comparison to the second mode, named anodic, which runs at the pressure range of 10-3 -10-2 mbar. Cathodic mode is used to quickly heat the sample holder, by the high ion flux. On the other hand, in the anodic mode, due to the lower operation pressure, higher effective ion acceleration takes place, which allows deeper ion implantation into the sample surface. This hybrid process was thoroughly explored regarding the duty cycle and conditions of operation, to achieve optimal performance of the treatments, which led to the attainment of surface hardness for samples of AISI SS 304 as high as 20 GPa and improvements including higher elastic modulus and resistance against corrosion. Detailed comparison among samples treated by this process with others treated by conventional method was done using nanoindentation, Auger Electron Spectroscopy (AES) and corrosion resistance testing.
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    Mapping High-Temperature Superconductors—A Scientometric Approach
    (New York, NY : Springer, 2008) Barth, Andreas; Marx, Werner
    This study has been carried out to analyze the research field of high-temperature superconductivity and to demonstrate the potential of modern databases and search systems for generating meta-information. The alkaline earth (A2) rare earth (RE) cuprate high-temperature superconductors as a typical inorganic compound family and the corresponding literature were analyzed by scientometric methods. The time dependent overall number of articles and patents and of the publications related to specific compound subsets and subject categories are given. The data reveal a significant decrease of basic research activity in this research field. The A2 RE cuprate species covered by the CAS compound file were analyzed with respect to the occurrence of specific elements in order to visualize known and unknown substances and to identify characteristic patterns. The quaternary and quinternary cuprates were selected and the number of compound species as a function of specific combinations of A2 and RE elements is given. The Cu/O and RE/A2 ratios of the quaternary cuprate species as a function of A2 and RE atoms are shown. In addition, the research landscape of the MgB2 related publications was established using STN AnaVist, an analysis tool recently developed by STN International.
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    Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules
    (College Park, MD : Institute of Physics Publishing, 2008) Wang, L.; Rastelli, A.; Kiravittaya, S.; Atkinson, P.; Ding, F.; Bof Bufon, C.C.; Hermannstädter, C.; Witzany, M.; Beirne, G.J.; Michler, P.; Schmidt, O.G.
    We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro- photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Particles as probes for complex plasmas in front of biased surfaces
    (College Park, MD : Institute of Physics Publishing, 2009) Basner, R.; Sigeneger, F.; Loffhagen, D.; Schubert, G.; Fehske, H.; Kersten, H.
    An interesting aspect in the research of complex (dusty) plasmas is the experimental study of the interaction of micro-particles with the surrounding plasma for diagnostic purposes. Local electric fields can be determined from the behaviour of particles in the plasma, e.g. particles may serve as electrostatic probes. Since in many cases of applications in plasma technology it is of great interest to describe the electric field conditions in front of floating or biased surfaces, the confinement and behaviour of test particles is studied in front of floating walls inserted into a plasma as well as in front of additionally biased surfaces. For the latter case, the behaviour of particles in front of an adaptive electrode, which allows for an efficient confinement and manipulation of the grains, has been experimentally studied in terms of the dependence on the discharge parameters and on different bias conditions of the electrode. The effect of the partially biased surface (dc and rf) on the charged micro-particles has been investigated by particle falling experiments. In addition to the experiments, we also investigate the particle behaviour numerically by molecular dynamics, in combination with a fluid and particle-in-cell description of the plasma. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
    (College Park, MD : Institute of Physics Publishing, 2008) Schroetter, T.; Zaumseil, P.; Seifarth, O.; Giussani, A.; Müssig, H.-J.; Storck, P.; Geiger, D.; Lichte, H.; Dabrowski, J.
    The integration of alternative semiconductor layers on the Si material platform via oxide heterostructures is of interest to increase the performance and/or functionality of future Si-based integrated circuits. The single crystalline quality of epitaxial (epi) semiconductor-insulator-Si heterostructures is however limited by too high defect densities, mainly due to a lack of knowledge about the fundamental physics of the heteroepitaxy mechanisms at work. To shed light on the physics of stacking twin formation as one of the major defect mechanisms in (111)-oriented fcc-related heterostructures on Si(111), we report a detailed experimental and theoretical study on the structure and defect properties of epi-Si(111)/Y2O 3/Pr2O3/Si(111) heterostructures. Synchrotron radiation-grazing incidence x-ray diffraction (SR-GIXRD) proves that the engineered Y2O3/Pr2O3 buffer dielectric heterostructure on Si(111) allows control of the stacking sequence of the overgrowing single crystalline epi-Si(111) layers. The epitaxy relationship of the epi-Si(111)/insulator/Si(111) heterostructure is characterized by a type A/B/A stacking configuration. Theoretical ab initio calculations show that this stacking sequence control of the heterostructure is mainly achieved by electrostatic interaction effects across the ionic oxide/covalent Si interface (IF). Transmission electron microscopy (TEM) studies detect only a small population of misaligned type B epi-Si(111) stacking twins whose location is limited to the oxide/epiSi IF region. Engineering the oxide/semiconductor IF physics by using tailored oxide systems opens thus a promising approach to grow heterostructures with well-controlled properties. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Nonequilibrium phase transitions in finite arrays of globally coupled Stratonovich models: Strong coupling limit
    (College Park, MD : Institute of Physics Publishing, 2009) Senf, F.; Altrock, P.M.; Behn, U.
    A finite array of N globally coupled Stratonovich models exhibits a continuous nonequilibrium phase transition. In the limit of strong coupling, there is a clear separation of timescales of centre of mass and relative coordinates. The latter relax very fast to zero and the array behaves as a single entity described by the centre of mass coordinate. We compute analytically the stationary probability distribution and the moments of the centre of mass coordinate. The scaling behaviour of the moments near the critical value of the control parameter ac(N) is determined. We identify a crossover from linear to square root scaling with increasing distance from ac. The crossover point approaches ac in the limit N →∞ which reproduces previous results for infinite arrays. Our results are obtained in both the Fokker-Planck and the Langevin approach and are corroborated by numerical simulations. For a general class of models we show that the transition manifold in the parameter space depends on N and is determined by the scaling behaviour near a fixed point of the stochastic flow. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Imaging of carrier-envelope phase effects in above-threshold ionization with intense few-cycle laser fields
    (College Park, MD : Institute of Physics Publishing, 2008) Kling, M.F.; Rauschenberger, J.; Verhoef, A.J.; Hasović, E.; Uphues, T.; Milošević, D.B.; Muller, H.G.; Vrakking, M.J.J.
    Sub-femtosecond control of the electron emission in above-threshold ionization of the rare gases Ar, Xe and Kr in intense few-cycle laser fields is reported with full angular resolution. Experimental data that were obtained with the velocity-map imaging technique are compared to simulations using the strong-field approximation (SFA) and full time-dependent Schrödinger equation (TDSE) calculations. We find a pronounced asymmetry in both the energy and angular distributions of the electron emission that critically depends on the carrier-envelope phase (CEP) of the laser field. The potential use of imaging techniques as a tool for single-shot detection of the CEP is discussed. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Attosecond electron thermalization in laser-induced nonsequential multiple ionization: Hard versus glancing collisions
    (College Park, MD : Institute of Physics Publishing, 2008) Liu, X.; De Morisson Faria, C.F.; Becker, W.
    A recollision-based largely classical statistical model of laser-induced nonsequential multiple (N-fold) ionization of atoms is further explored. Upon its return to the ionic core, the first-ionized electron interacts with the other N - 1 bound electrons either through a contact or a Coulomb interaction. The returning electron may leave either immediately after this interaction or join the other electrons to form a thermalized complex which leaves the ion after the delay Δt, which is the sum of a thermalization time and a possible additional dwell time. Good agreement with the available triple and quadruple ionization data in neon and argon is obtained with the contact scenario and delays of Δt = 0.17 T and 0.265 T, respectively, with T the laser period. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Towards time resolved core level photoelectron spectroscopy with femtosecond x-ray free-electron lasers
    (College Park, MD : Institute of Physics Publishing, 2008) Pietzsch, A.; Föhlisch, A.; Beye, M.; Deppe, M.; Hennies, F.; Nagasono, M.; Suljotil, E.; Wurth, W.; Gahl, C.; Dörich, K.; Melnikov, A.
    We have performed core level photoelectron spectroscopy on a W(110) single crystal with femtosecond XUV pulses from the free-electron laser at Hamburg (FLASH). We demonstrate experimentally and through theoretical modelling that for a suitable range of photon fluences per pulse, time-resolved photoemission experiments on solid surfaces are possible. Using FLASH pulses in combination with a synchronized optical laser, we have performed femtosecond time-resolved core-level photoelectron spectroscopy and observed sideband formation on the W 4f lines indicating a cross correlation between femtosecond optical and XUV pulses. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.