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Rare-earth-free MnAl-C-Ni permanent magnets produced by extrusion of powder milled from bulk
Rare-earth-free MnAl-C-Ni permanent magnets have been produced for the first time by extruding powders milled from bulk. The resulting materials, fabricated using different conditions, contained a large volume fraction (> 0.92) of the desired τ-phase. In terms of the maximum energy product, the best performance obtained for a whole, transverse section of the extruded material was (BH)max = 46 kJm−3, and was (BH)max = 49 kJm−3 for a sample taken from near the edge of this section. Analysis showed that this material was comparable to the long-established benchmark, comprising MnAl-C-based magnets extruded in industry from bulk or from gas-atomised powder. Such materials are no longer available. The microstructure of the materials produced here consisted of fine, recrystallised grains, which exhibited an <001> fibre texture with intermediate texture quality and of larger, non-recrystallised regions, which contained hierarchical twinning and a high density of defects. The volume fraction and size of the non-recrystallised regions was greatly reduced by decreasing the size of the initial powder particles. This led to a large increase in the squareness factor of the demagnetisation curve and consequently to the high (BH)max values observed.
Nano energy for miniaturized systems
Skin mountable electronic devices are in a high-speed development at the crossroads of materials science, electronics, and computer science. Sophisticated functions, such as sensing, actuating, and computing, are integrated into a soft electronic device that can be firmly mounted to any place of human body. These advanced electronic devices are capable of yielding abilities for us whenever they are needed and even expanding our abilities beyond their natural limitations. Despite the great promise of skin mounted electronic devices, they still lack satisfactory power supplies that are safe and continuous. This Perspective discusses the prospects of the development of energy storage devices for the next generation skin mountable electronic devices based on their unique requirements on flexibility and miniaturized size.
Modification of Newton's law of gravity at very large distances
We discuss a Modified Field Theory (MOFT) in which the number of fields can vary. It is shown that when the number of fields is conserved MOFT reduces to the standard field theory but interaction constants undergo an additional renormalization and acquire a dependence on spatial scales. In particular, the renormalization of the gravitational constant leads to the deviation of the law of gravity from the Newton's law in some range of scales rmin < r < rmax, in which the gravitational potential shows essentially logarithmic ∼ ln r (instead of 1/r) behavior. In this range, the renormalized value of the gravitational constant G increases and at scales r > rmax acquires a new constant value G′ ∼ Grmax/rmin. From the dynamical standpoint this looks as if every point source is surrounded with a halo of dark matter. It is also shown that if the maximal scale rmax is absent, the homogeneity of the dark matter in the Universe is consistent with a fractal distribution of baryons in space, in which the luminous matter is located on thin two-dimensional surfaces separated by empty regions of ever growing size.
Scalable, high power line focus diode laser for crystallizing of silicon thin films
We present the design and performance of a diode laser module producing a high intensity line focus at 808 nm for material processing. The design is based on a linear array of 7 laser bars and beam forming optics featuring a micro-optic homogenizer. The module delivers a total output power of 900 W at 140 A and peak intensity created in the focus area of 10.3 kW/cm2. Two systems with line length of 5 cm and 10 cm at a large working distance of 110 mm have been realized. The chosen concept allows scaling in length by joining multiple modules which is of interest for material processing in industrial applications. Application results from laser crystallization of amorphous silicon seed layers used in the fabrication of photovoltaic cells for solar panels are given.
Revealing all states of dewetting of a thin gold layer on a silicon surface by nanosecond laser conditioning
Dewetting is a ubiquitous phenomenon which can be applied to the laser synthesis of nanoparticles. A classical spinodal dewetting process takes place in four successive states, which differ from each other in their morphology. In this study all states are revealed by interaction of pulsed nanosecond UV laser light with thin gold layers with thicknesses between 1 nm and 10 nm on (100) silicon wafers. The specific morphologies of the dewetting states are discussed with particular emphasis on the state boundaries. The main parameter determining which state is formed is not the duration for which the gold remains liquid, but rather the input energy provided by the laser. This shows that each state transition has a separate measurable activation energy. The temperature during the nanosecond pulses and the duration during which the gold remains liquid was determined by simulation using the COMSOL Multiphysics® software package. Using these calculations, an accurate local temperature profile and its development over time was simulated. An analytical study of the morphologies and formed structures was performed using Minkowski measures. With aid of this tool, the laser induced structures were compared with thermally annealed samples, with perfectly ordered structures and with perfectly random structures. The results show that both, structures of the laser induced and the annealed samples, strongly resemble the perfectly ordered structures. This reveals a close relationship between these structures and suggests that the phenomenon under investigation is indeed a spinodal dewetting generated by an internal material wave function. The purposeful generation of these structures and the elucidation of the underlying mechanism of dewetting by short pulse lasers may assist the realisation of various technical elements such as nanowires in science and industry. © 2020
Recent developments of stamped planar micro-supercapacitors: Materials, fabrication and perspectives
The rapid development of wearable and portable electronics has dramatically increased the application for miniaturized energy storage components. Stamping micro-supercapacitors (MSCs) with planar interdigital configurations are considered as a promising candidate to meet the requirements. In this review, recent progress of the different stamping materials and various stamping technologies are first discussed. The merits of each material, manufacturing process of each stamping method and the properties of stamping MSCs are scrutinized, respectively. Further insights on technical difficulties and scientific challenges are finally demonstrated, including the limited thickness of printed electrodes, poor overlay accuracy and printing resolution.
Femtosecond X-ray diffraction from nanolayered oxides
Femtosecond X-ray scattering offers the opportunity to investigate reversible lattice dynamics with unprecedented accuracy. We show in a prototype experiment how strain propagation modifies the functionality of a ferroelectric system on its intrinsic time scale.
Low-power emerging memristive designs towards secure hardware systems for applications in internet of things
Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and in-memory computing (IMC), but there is a rising interest in using memristive technologies for security applications in the era of internet of things (IoT). In this review article, for achieving secure hardware systems in IoT, low-power design techniques based on emerging memristive technology for hardware security primitives/systems are presented. By reviewing the state-of-the-art in three highlighted memristive application areas, i.e. memristive non-volatile memory, memristive reconfigurable logic computing and memristive artificial intelligent computing, their application-level impacts on the novel implementations of secret key generation, crypto functions and machine learning attacks are explored, respectively. For the low-power security applications in IoT, it is essential to understand how to best realize cryptographic circuitry using memristive circuitries, and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security. This review article aims to help researchers to explore security solutions, to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.
CW laser operation around 2-μm in (Tm,Yb):KLu(WO4) 2
Laser generation in continuous wave (CW) regime at 1.94-μm from (Tm,Yb) codoped system has been investigated in two different hosts: KLu(WO 4)2 and KY(WO4)2. The high quality crystals were grown by the Top-Seeded Solution Growth Slow Cooling (TSSG-SC) method with doping levels of 2.5 at. %Tm and 5 at. %Yb. The active media were pumped with a diode laser at 980 nm. We demonstrated the superior performance of KLu(WO4)2 compared to that of KY(WO4) 2 and improved the results already obtained in the literature. The maximum laser output power reached was 157 mW for (Tm,Yb):KLu(WO 4)2 and 123 mW for (Tm,Yb):KY(WO4)2. © 2010 Published by Elsevier Ltd.
Large superplastic strain in non-modulated epitaxial Ni-Mn-Ga films
The phase transformation and superplastic characteristics of free-standing epitaxial Ni-Mn-Ga stripes are reported. The stripes are prepared by micromachining a 1 μm thick Ni-Mn-Ga film sputter-deposited on a single crystalline MgO (100) substrate using optical lithography and a Chromium-based sacrificial layer technology. The stripes are oriented at angles of 0 and 45 degrees with respect to the Ni-Mn-Ga unit cell. Electrical resistance versus temperature characteristics reveal a reversible thermally induced phase transformation between 169°C and 191°C. Stress-strain measurements are performed with the stress applied along the [100]Ni-Mn-Ga as well as [110]Ni-Mn-Ga direction. Depending on the orientation, the twinning stress ranges between 25 and 30 MPa, respectively. For the [100] Ni-Mn-Ga and [110]Ni-Mn-Ga directions, superplastic behaviour with a strain plateau of 12 % and 4% are observed, respectively, indicating stress-induced reorientation of non-modulated martensite variants.