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- ItemPost deposition annealing of epitaxial Ce1-xPrxO2-δ films grown on Si(111)(Cambridge : RSC Publ., 2015) Wilkens, H.; Spieß, W.; Zoellner, M.H.; Niu, G.; Schroeder, T.; Wollschläger, J.In this work the structural and morphological changes of Ce1−xPrxO2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealing temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed.
- ItemModular coherent photonic-aided payload receiver for communications satellites([London] : Nature Publishing Group UK, 2019) Duarte, Vanessa C.; Prata, João G.; Ribeiro, Carlos F.; Nogueira, Rogério N.; Winzer, Georg; Zimmermann, Lars; Walker, Rob; Clements, Stephen; Filipowicz, Marta; Napierała, Marek; Nasiłowski, Tomasz; Crabb, Jonathan; Kechagias, Marios; Stampoulidis, Leontios; Anzalchi, Javad; Drummond, Miguel V.Ubiquitous satellite communications are in a leading position for bridging the digital divide. Fulfilling such a mission will require satellite services on par with fibre services, both in bandwidth and cost. Achieving such a performance requires a new generation of communications payloads powered by large-scale processors, enabling a dynamic allocation of hundreds of beams with a total capacity beyond 1 Tbit s−1. The fact that the scale of the processor is proportional to the wavelength of its signals has made photonics a key technology for its implementation. However, one last challenge hinders the introduction of photonics: while large-scale processors demand a modular implementation, coherency among signals must be preserved using simple methods. Here, we demonstrate a coherent photonic-aided receiver meeting such demands. This work shows that a modular and coherent photonic-aided payload is feasible, making way to an extensive introduction of photonics in next generation communications satellites.
- ItemHigh Performance Asymmetric Coupled Line Balun at Sub-THz Frequency(Basel : MDPI, 2019) Ali, Abdul; Yun, Jongwon; Ng, Herman Jalli; Kissinger, Dietmar; Giannini, Franco; Colantonio, PaoloIn this paper, we report a high-performance balun with characteristics suitable for future broadband sub-THz differential circuits. The idea of the balun is based on three asymmetric coupled lines, which enhance the odd mode capacitances to equalize the even/odd mode phase velocities. The inner line of the three asymmetric coupled lines is configured to form the open stub ( λ /2), while the outer lines form short stubs ( λ /4). To further reduce the phase imbalance, the short stubs in one of the arms of the balun are connected with vias and a lower metal layer. The balun is developed using the standard 130-nm SiGe BiCMOSback-end process and EM simulated with ADS momentum and Sonnet. The −10-dB reflection coefficient (S 11 ) bandwidth of the balun is 136 GHz (88–224 GHz). It shows insertion loss (including RF pads) <1.5 dB, phase imbalance <7 degrees, and amplitude imbalance <1 dB at 94–177 GHz. Furthermore, a scaled-down version of the balun operates on the WR-6, WR-5, and WR-4 frequency bands without significant degradation in its performance. Such characteristics of the balun make it an ideal candidate for various broadband differential circuits.
- ItemModeling of edge-emitting lasers based on tensile strained germanium microstrips(New York, NY : IEEE, 2015) Peschka, D.; Thomas, M.; Glitzky, A.; Nürnberg, R.; Gärtner, K.; Virgilio, M.; Guha, S.; Schroeder, T.; Capellini, G.; Koprucki, Th.In this paper, we present a thorough modeling of an edge-emitting laser based on strained germanium (Ge) microstrips. The full-band structure of the tensile strained Ge layer enters the calculation of optical properties. Material gain for strained Ge is used in the 2D simulation of the carrier transport and of the optical field within a cross section of the microstrips orthogonal to the optical cavity. We study optoelectronic properties of the device for two different designs. The simulation results are very promising as they show feasible ways toward Ge emitter devices with lower threshold currents and higher efficiency as published insofar.
- ItemResidual metallic contamination of transferred chemical vapor deposited graphene(Washington, DC : Soc., 2015) Lupina, Grzegorz; Kitzmann, Julia; Costina, Ioan; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Vaziri, Sam; Östling, Mikael; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Kataria, Satender; Gahoi, Amit; Lemme, Max C.; Ruhl, Guenther; Zoth, Guenther; Luxenhofer, Oliver; Mehr, WolfgangIIntegration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 1013 atoms/cm2. These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.
- ItemStructural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications([London] : Macmillan Publishers Limited, part of Springer Nature, 2016) Tonkikh, A.A.; Voloshina, E.N.; Werner, P.; Blumtritt, H.; Senkovskiy, B.; Güntherodt, G.; Parkin, S.S.P.; Dedkov, Yu. S.Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.
- ItemEnergy conservation and harvesting in wireless sensor networks(London : Hindawi, 2019) Stojcev, Mile; Stamenkovic, Zoran; Dimitrijevic, Bojan[No abstract available]
- ItemAnalysis of Human Breath by Millimeter-Wave/Terahertz Spectroscopy(Basel : MDPI, 2019) Rothbart, Nick; Holz, Olaf; Koczulla, Rembert; Schmalz, Klaus; Hübers, Heinz-WilhelmBreath gas analysis is a promising tool for medical research and diagnosis. A particularly powerful technological approach is millimeter-wave/terahertz (mmW/THz) spectroscopy, because it is a very sensitive and highly selective technique. In addition, it offers the potential for compact and affordable sensing systems for wide use. In this work, we demonstrate the capability of a mmW/THz spectrometer for breath analysis. Samples from three volunteers and a sample from ambient air were analyzed with respect to 31 different molecular species. High-resolution absorption spectra were measured by scanning two absorption lines from each species. Out of the 31, a total of 21 species were detected. The results demonstrate the potential of mmW/THz spectroscopy for breath analysis. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
- ItemAdvanced numerical investigation of the heat flux in an array of microbolometers([London] : Macmillan Publishers Limited, part of Springer Nature, 2019) Stocchi, Matteo; Mencarelli, Davide; Pierantoni, Luca; Göritz, Alexander; Kaynak, Canan Baristiran; Wietstruck, Matthias; Kaynak, MehmetThe investigation of the thermal properties of an array of microbolometers has been carried out by mean of two independent numerical analysis, respectively the Direct-Simulation Monte Carlo (DSMC) and the classic diffusive approach of the Fourier's equation. In particular, the thermal dissipation of a hot membrane placed in a low-pressure cavity has been studied for different values of the temperature of the hot body and for different values of the pressure of the environment. The results for the heat flux derived from the two approaches have then been compared and discussed.
- ItemRestoring a nearly free-standing character of graphene on Ru(0001) by oxygen intercalation([London] : Macmillan Publishers Limited, part of Springer Nature, 2016) Voloshina, Elena; Berdunov, Nikolai; Dedkov, YuriyRealization of a free-standing graphene is always a demanding task. Here we use scanning probe microscopy and spectroscopy to study the crystallographic structure and electronic properties of the uniform nearly free-standing graphene layers obtained by intercalation of oxygen monolayer in the “strongly” bonded graphene/Ru(0001) interface. Spectroscopic data show that such graphene layer is heavily p-doped with the Dirac point located at 552 meV above the Fermi level. Experimental data are understood within density-functional theory approach and the observed effects are in good agreement with the theoretical data.