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- ItemPlasticity, crack initiation and defect resistance in alkali-borosilicate glasses: From normal to anomalous behavior(Amsterdam [u.a.] : Elsevier Science, 2015) Limbach, R.; Winterstein-Beckmann, A.; Dellith, J.; Möncke, D.; Wondraczek, L.We provide a comprehensive description of the defect tolerance of sodium-borosilicate glasses upon sharp contact loading. This is motivated by the key role which is taken by this particular glass system in a wide variety of applications, ranging from electronic substrates, display covers and substrates for biomedical imaging and sensing to, e.g., radioactive waste vitrification. The present report covers the mechanical properties of glasses in the Na2O–B2O3–SiO2 ternary over the broad range of compositions from pure SiO2 to binary sodium-borates, and crossing the regions of various commercially relevant specialty borosilicate glasses, such as the multi-component Duran-, Pyrex- and BK7-type compositions and typical soda-lime silicate glasses, which are also included in this study. In terms of structure, the considered glasses may be separated into two groups, that is, one series which contains only bridging oxygen atoms, and another series which is designed with an increasing number of non-bridging oxygen ions. Elastic moduli, Poisson ratio, hardness as well as creep and crack resistance were evaluated, as well as the contribution of densification to the overall amount of indentation deformation. Correlations between the mechanical properties and structural characteristics of near- and mid-range order are discussed, from which we obtain a mechanistic view at the molecular reactions which govern the overall deformation reaction and, ultimately, contact cracking.
- ItemSerrated flow of CuZr-based bulk metallic glasses probed by nanoindentation: Role of the activation barrier, size and distribution of shear transformation zones(Amsterdam [u.a.] : Elsevier Science, 2017) Limbach, R.; Kosiba, K.; Pauly, S.; Kühn, U.; Wondraczek, L.We report on the effect of Al and Co alloying in vitreous Cu50Zr50 on local deformation and serrated flow as a model for relating the size and localization of shear transformation zones (STZ) to Poisson ratio and strain-rate sensitivity of metallic glasses. Alloying with Al results in significant variations in mechanical performance, in particular, in Young's modulus, hardness and strain-rate sensitivity. Increasing strain-rate sensitivity with increasing degree of alloying indicates a reduced tendency for shear localization. In parallel, a gradual transition from inhomogeneous to homogeneous plastic flow is observed. Using a statistical analysis of the shear stress associated with the initiation of the first pop-in in the load-displacement curve during spherical indentation, the activation volume for plastic flow at the onset of yielding is reported. This analysis is employed for experimental evaluation of the compositional dependence of activation barrier, size and distribution of STZs. It is demonstrated that the STZ size does not change significantly upon Al alloying and encompasses a local volume of around 22–24 atoms. However, the barrier energy density for the initiation of a single STZ progressively increases. The broader distribution of STZs impedes their accumulation into larger-size flow units, leading to a lower number and reduced size of serrations in the load-displacement curve. On the contrary, lower barrier energy densities enable a larger quantity of STZs to be activated simultaneously. These STZs can easily percolate into large flow units, promoting plastic flow through their interaction. We employ Poisson's ratio as an indicator for plasticity to shown that this interpretation can be transferred to other types of metallic glasses. That is, larger flow units were found for metallic glasses with higher Poisson ratio and more pronounced plasticity, while the flow units in alloys with very low Poisson ratio and high brittleness are significantly reduced in size and more homogeneously distributed throughout the material.
- ItemHeat accumulation during femtosecond laser treatment at high repetition rate – A morphological, chemical and crystallographic characterization of self-organized structures on Ti6Al4V(Amsterdam : Elsevier, 2021) Schnell, Georg; Lund, Henrik; Bartling, Stephan; Polley, Christian; Riaz, Abdullah; Senz, Volkmar; Springer, Armin; Seitz, HermannThis study presents a detailed characterization of self-organized nano- and microstructures on Ti6Al4V evoked by different scanning strategies and fluences with a 300 fs laser operating at a laser wavelength of 1030 nm. The resulting surface morphology was visualized via field emission scanning electron microscopy (FEG-SEM) images of the surface and cross-sections. X-ray diffraction (XRD)-analysis was performed to analyse changes in crystal structures. The chemical surface composition of the near-surface layer was determined by X-ray photoelectron spectroscopy (XPS). Results show a significant influence of heat accumulation while processing with high laser repetition rates on the formation, crystallinity and chemical composition of self-organized structures depending on the scanning strategy. The ablation with different laser scanning strategies led to varying dynamics of growth-mechanisms of self-organized structures, formation of intermetallic phases (Ti3Al), sub-oxides and oxides (Ti6O, TiO) as well as ions (Ti3+, Ti4+) in surface layer reliant on applied fluence. Furthermore, investigations revealed a heat-affected zone up to several micrometers in non-ablated material. © 2021 The Authors
- ItemSingle-atom catalytic growth of crystals using graphene as a case study(London : Nature Publishing Group, 2021) Yang, Xiaoqin; Liu, Yu; Ta, Huy Q.; Rezvani, Ehsan; Zhang, Yue; Zeng, Mengqi; Fu, Lei; Bachmatiuk, Alicja; Luo, Jinping; Liu, Lijun; Rümmeli, Mark H.Anchored Single-atom catalysts have emerged as a cutting-edge research field holding tremendous appeal for applications in the fields of chemicals, energy and the environment. However, single-atom-catalysts for crystal growth is a nascent field. Of the few studies available, all of them are based on state-of-the-art in situ microscopy investigations and computational studies, and they all look at the growth of monolayer graphene from a single-atom catalyst. Despite the limited number of studies, they do, collectively, represent a new sub-field of single-atom catalysis, namely single-atom catalytic growth of crystalline solids. In this review, we examine them on substrate-supported and as freestanding graphene fabrication, as well as rolled-up graphene, viz., single-walled carbon nanotubes (SWCNT), grown from a single atom. We also briefly discuss the catalytic etching of graphene and SWCNT’s and conclude by outlining the future directions we envision this nascent field to take.
- ItemSpatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam(London : Nature Publishing Group, 2021) Heilmann, Martin; Deinhart, Victor; Tahraoui, Abbes; Höflich, Katja; Lopes, J. Marcelo J.The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is problematic in terms of scaling and reproducibility. Controlling the location of the nuclei formation remains a key challenge in vdWE. Here, a focused He ion beam is used to deterministically place defects in graphene substrates, which serve as preferential nucleation sites for the growth of insulating, 2D hexagonal boron nitride (h-BN). Therewith a mask-free, selective-area vdWE (SAvdWE) is demonstrated, in which nucleation yield and crystal quality of h-BN are controlled by the ion beam parameters used for defect formation. Moreover, h-BN grown via SAvdWE is shown to exhibit electron tunneling characteristics comparable to those of mechanically transferred layers, thereby lying the foundation for a reliable, high-density array fabrication of 2D heterostructures for device integration via defect engineering in 2D substrates.
- ItemReactive plasma cleaning and restoration of transition metal dichalcogenide monolayers(London : Nature Publishing Group, 2021) Marinov, Daniil; de Marneffe, Jean-François; Smets, Quentin; Arutchelvan, Goutham; Bal, Kristof M.; Voronina, Ekaterina; Rakhimova, Tatyana; Mankelevich, Yuri; El Kazzi, Salim; Nalin Mehta, Ankit; Wyndaele, Pieter-Jan; Heyne, Markus Hartmut; Zhang, Jianran; With, Patrick C.; Banerjee, Sreetama; Neyts, Erik C.; Asselberghs, Inge; Lin, Dennis; De Gendt, StefanThe cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.
- ItemGiant persistent photoconductivity in monolayer MoS2 field-effect transistors(London : Nature Publishing Group, 2021) George, A.; Fistul, M.V.; Gruenewald, M.; Kaiser, D.; Lehnert, T.; Mupparapu, R.; Neumann, C.; Hübner, U.; Schaal, M.; Masurkar, N.; Arava, L.M.R.; Staude, I.; Kaiser, U.; Fritz, T.; Turchanin, A.Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (λ = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large number of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis for the defect-based engineering of the electronic and optical properties of TMDs for device applications.