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- ItemUltra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals(Melville, NY : AIP Publ., 2019) Galazka, Zbigniew; Ganschow, Steffen; Schewski, Robert; Irmscher, Klaus; Klimm, Detlef; Kwasniewski, Albert; Pietsch, Mike; Fiedler, Andreas; Schulze-Jonack, Isabelle; Albrecht, Martin; Schröder, Thomas; Bickermann, MatthiasTruly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 °C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 Ωcm, 3 × 1018–9 × 1019 cm−3, and 107 cm2 V−1 s−1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 °C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coefficient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 Å, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel films.
- ItemREScO3 Substrates—Purveyors of Strain Engineering(Weinheim : Wiley-VCH, 2019) Klimm, Detlef; Guguschev, Christo; Ganschow, Steffen; Bickermann, Matthias; Schlom, Darrell G.The thermodynamic and crystallographic background for the development of substrate crystals that are suitable for the epitaxial deposition of biaxially strained functional perovskite layers is reviewed. In such strained layers the elastic energy delivers an additional contribution to the Gibbs free energy, which allows the tuning of physical properties and phase transition temperatures to desired values. For some oxide systems metastable phases can even be accessed. Rare-earth scandates, REScO3, are well suited as substrate crystals because they combine mechanical and chemical stability in the epitaxy process with an adjustable range of pseudo-cubic lattice parameters in the 3.95 to 4.02 Å range. To further tune the lattice parameters, chemical substitution for the RE or Sc is possible. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemFerroelectric Self-Poling in GeTe Films and Crystals(Basel : MDPI, 2019) Kriegner, Dominik; Springholz, Gunther; Richter, Carsten; Pilet, Nicolas; Müller, Elisabeth; Capron, Marie; Berger, Helmut; Holý, Václav; Dil, J. Hugo; Krempaský, JurajFerroelectric materials are used in actuators or sensors because of their non-volatile macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric endowed with exceedingly complex physics related to its crystalline, amorphous, thermoelectric, and—fairly recently discovered—topological properties, making the material potentially interesting for spintronics applications. Typically, ferroelectric materials possess random oriented domains that need poling to achieve macroscopic polarization. By using X-ray absorption fine structure spectroscopy complemented with anomalous diffraction and piezo-response force microscopy, we investigated the bulk ferroelectric structure of GeTe crystals and thin films. Both feature multi-domain structures in the form of oblique domains for films and domain colonies inside crystals. Despite these multi-domain structures which are expected to randomize the polarization direction, our experimental results show that at room temperature there is a preferential ferroelectric order remarkably consistent with theoretical predictions from ideal GeTe crystals. This robust self-poled state has high piezoelectricity and additional poling reveals persistent memory effects. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
- ItemQuasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer(Basel : MDPI, 2019) Miller, Wolfram; Abrosimov, Nikolay; Fischer, Jörg; Gybin, Alexander; Juda, Uta; Kayser, Stefan; Janicskó-Csáthy, JószefA numerical scheme was developed to compute the thermal and stress fields of the Czochralski process in a quasi-time dependent mode. The growth velocity was computed from the geometrical changes in melt and crystal due to pulling for every stage, for which the thermal and stress fields were computed by using the open source software Elmer. The method was applied to the Czochralski growth of Ge crystals by inductive heating. From a series of growth experiments, we chose one as a reference to check the validity of the scheme with respect to this Czochralski process. A good agreement both for the shapes of the melt/crystal interface at various time steps and the change in power consumption with process time was observed. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
- ItemGrowth and Properties of Intentionally Carbon-Doped GaN Layers(Weinheim : Wiley-VCH, 2019) Richter, Eberhard; Beyer, Franziska C.; Zimmermann, Friederike; Gärtner, Günter; Irmscher, Klaus; Gamov, Ivan; Heitmann, Johannes; Weyers, Markus; Tränkle, GüntherCarbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 1010 Ω cm at room temperature found for a carbon concentration of 8.8 × 1018 cm−3. For higher carbon levels up to 3.5 × 1019 cm−3, a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as CN with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, CN-a-CGa-a-CN and CN-a-CGa-c-CN, are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 1018 cm−3. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemCanonical sets of best L1-approximation(New York, NY : Hindawi, 2012) Dryanov, D.; Petrov, P.In mathematics, the term approximation usually means either interpolation on a point set or approximation with respect to a given distance. There is a concept, which joins the two approaches together, and this is the concept of characterization of the best approximants via interpolation. It turns out that for some large classes of functions the best approximants with respect to a certain distance can be constructed by interpolation on a point set that does not depend on the choice of the function to be approximated. Such point sets are called canonical sets of best approximation. The present paper summarizes results on canonical sets of best L1-approximation with emphasis on multivariate interpolation and best L1-approximation by blending functions. The best L1-approximants are characterized as transfinite interpolants on canonical sets. The notion of a Haar-Chebyshev system in the multivariate case is discussed also. In this context, it is shown that some multivariate interpolation spaces share properties of univariate Haar-Chebyshev systems. We study also the problem of best one-sided multivariate L 1-approximation by sums of univariate functions. Explicit constructions of best one-sided L1-approximants give rise to well-known and new inequalities.
- ItemPerformance of fully instrumented detector planes of the forward calorimeter of a Linear Collider detector(London : Inst. of Physics, 2015) Abramowicz, H.; Abusleme, A.; Afanaciev, K.; Aguilar, J.; Alvarez, E.; Avila, D.; Benhammou, Y.; Bortko, L.; Borysov, O.; Bergholz, M.; Bozovic-Jelisavcic, I.; Castro, E.; Chelkov, G.; Coca, C.; Daniluk, W.; Dumitru, L.; Elsener, K.; Fadeyev, V.; Firlej, M.; Firu, E.; Fiutowski, T.; Ghenescu, V.; Gostkin, M.; Henschel, H.; Idzik, M.; Ishikawa, A.; Kananov, S.; Kollowa, S.; Kotov, S.; Kotula, J.; Kozhevnikov, D.; Kruchonok, V.; Krupa, B.; Kulis, Sz.; Lange, W.; Lesiak, T.; Levy, A.; Levy, I.; Lohmann, W.; Lukic, S.; Milke, C.; Moron, J.; Moszczynski, A.; Neagu, A.T.; Novgorodova, O.; Oliwa, K.; Orlandea, M.; Pandurovic, M.; Pawlik, B.; Preda, T.; Przyborowski, D.; Rosenblat, O.; Sailer, A.; Sato, Y.; Schumm, B.; Schuwalow, S.; Smiljanic, I.; Smolyanskiy, P.; Swientek, K.; Teodorescu, E.; Terlecki, P.; Wierba, W.; Wojton, T.; Yamaguchi, S.; Yamamoto, H.; Zawiejski, L.; Zgura, I.S.; Zhemchugov, A.Detector-plane prototypes of the very forward calorimetry of a future detector at an e+e− collider have been built and their performance was measured in an electron beam. The detector plane comprises silicon or GaAs pad sensors, dedicated front-end and ADC ASICs, and an FPGA for data concentration. Measurements of the signal-to-noise ratio and the response as a function of the position of the sensor are presented. A deconvolution method is successfully applied, and a comparison of the measured shower shape as a function of the absorber depth with a Monte-Carlo simulation is given.
- ItemTerahertz stimulated emission from silicon doped by hydrogenlike acceptors(College Park : American Institute of Physics Inc., 2014) Pavlov, S.G.; Deßmann, N.; Shastin, V.N.; Zhukavin, R.K.; Redlich, B.; van der Meer, A.F.G.; Mittendorff, M.; Winnerl, S.; Abrosimov, N.V.; Riemann, H.; Hübers, H.-W.Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Λ8+ → 1Λ7- , 1Λ6-, 1Λ8- intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Λ7- , 1Λ6- , and 1Λ8- states, and the lower laser level for both emission lines is the 2Λ8+ state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Λ8+ state and not the 1Λ7+ split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.
- ItemFemtosecond X-ray diffraction from nanolayered oxides(Amsterdam : Elsevier, 2010) Von Korff Schmising, C.; Harpoeth, A.; Zhavoronkov, N.; Woerner, M.; Elsaesser, T.; Bargheer, M.; Schmidbauer, M.; Vrejoiu, I.; Hesse, D.; Alexe, M.Femtosecond X-ray scattering offers the opportunity to investigate reversible lattice dynamics with unprecedented accuracy. We show in a prototype experiment how strain propagation modifies the functionality of a ferroelectric system on its intrinsic time scale.
- ItemFirst Terahertz-range Experiments on Pump – Probe Setup at Novosibirsk free Electron Laser(Amsterdam [u.a.] : Elsevier, 2016) Choporova, Yulia Yu.; Gerasimov, Vasily V.; Knyazev, Boris A.; Sergeev, Sergey M.; Shevchenko, Oleg A.; Zhukavin, Roman K.; Abrosimov, Nikolay V.; Kovalevsky, Konstantin A.; Ovchar, Vladimir K.; Hübers, Heinz-Wilhelm; Kulipanov, Gennady N.; Shastin, Valery N.; Schneider, Harald; Vinokurov, Nikolay A.A single-color pump-probe system has been commissioned at the Novosibirsk free electron laser. The laser emits a tunable monochromatic terahertz radiation. To prove the proper system operation, we investigated the time-resolved absorption of a sample of n-type germanium doped with antimony, which was previously investigated at the FELBE facility, in the temperature range from 5 to 40 K. The measured relaxation time amounted to about 1.7 ns, which agreed with the results obtained at the FELBE. The results of pump-probe measurements of non-equilibrium dynamics of hot electrons in the germanium crystal at cryogenic temperatures are presented for wavelengths of 105, 141 and 150 μm.