2022, Song, Qi, Sun, Jiaxin, Parzyck, Christopher T., Miao, Ludi, Xu, Qing, Hensling, Felix V. E., Barone, Matthew R., Hu, Cheng, Kim, Jinkwon, Faeth, Brendan D., Paik, Hanjong, King, Phil D. C., Shen, Kyle M., Schlom, Darrell G.

Utilizing the powerful combination of molecular-beam epitaxy (MBE) and angle-resolved photoemission spectroscopy (ARPES), we produce and study the effect of different terminating layers on the electronic structure of the metallic delafossite PdCoO2. Attempts to introduce unpaired electrons and synthesize new antiferromagnetic metals akin to the isostructural compound PdCrO2 have been made by replacing cobalt with iron in PdCoO2 films grown by MBE. Using ARPES, we observe similar bulk bands in these PdCoO2 films with Pd-, CoO2-, and FeO2-termination. Nevertheless, Pd- and CoO2-terminated films show a reduced intensity of surface states. Additionally, we are able to epitaxially stabilize PdFexCo1-xO2 films that show an anomaly in the derivative of the electrical resistance with respect to temperature at 20 K, but do not display pronounced magnetic order.

2021, Hensling, Felix V. E., Dahliah, Diana, Dulal, Prabin, Singleton, Patrick, Sun, Jiaxin, Schubert, Jürgen, Paik, Hanjong, Subedi, Indra, Subedi, Biwas, Rignanese, Gian-Marco, Podraza, Nikolas J., Hautier, Geoffroy, Schlom, Darrell G.

We have studied the growth of epitaxial films of stannate pyrochlores with a general formula A2Sn2O7 (A = La and Y) and find that it is possible to incorporate ∼25% excess of the A-site constituent; in contrast, any tin excess is expelled. We unravel the defect chemistry, allowing for the incorporation of excess A-site species and the mechanism behind the tin expulsion. An A-site surplus is manifested by a shift in the film diffraction peaks, and the expulsion of tin is apparent from the surface morphology of the film. In an attempt to increase La2Sn2O7 conductivity through n-type doping, substantial quantities of tin have been substituted by antimony while maintaining good film quality. The sample remained insulating as explained by first-principles computations, showing that both the oxygen vacancy and antimony-on-tin substitutional defects are deep. Similar conclusions are drawn on Y2Sn2O7. An alternative n-type dopant, fluorine on oxygen, is shallow according to computations and more likely to lead to electrical conductivity. The bandgaps of stoichiometric La2Sn2O7 and Y2Sn2O7 films were determined by spectroscopic ellipsometry to be 4.2 eV and 4.48 eV, respectively. © 2021 Author(s).

2022, Barone, Matthew R., Jeong, Myoungho, Parker, Nicholas, Sun, Jiaxin, Tenne, Dmitri A., Lee, Kiyoung, Schlom, Darrell G.

We outline a method to synthesize (ATiO3)nAO Ruddlesden–Popper phases with high-n, where the A-site is a mixture of barium and strontium, by molecular-beam epitaxy. The precision and consistency of the method described is demonstrated by the growth of an unprecedented (SrTiO3)50SrO epitaxial film. We proceed to investigate barium incorporation into the Ruddlesden–Popper structure, which is limited to a few percent in bulk, and we find that the amount of barium that can be incorporated depends on both the substrate temperature and the strain state of the film. At the optimal growth temperature, we demonstrate that as much as 33% barium can homogeneously populate the A-site when films are grown on SrTiO3 (001) substrates, whereas up to 60% barium can be accommodated in films grown on TbScO3 (110) substrates, which we attribute to the difference in strain. This detailed synthetic study of high n, metastable Ruddlesden–Popper phases is pertinent to a variety of fields from quantum materials to tunable dielectrics

2017, Abrosimov, N.V., Aref’ev, D.G., Becker, P., Bettin, H., Bulanov, A.D., Churbanov, M.F., Filimonov, S.V., Gavva, V.A., Godisov, O.N., Gusev, A.V., Kotereva, T.V., Nietzold, D., Peters, M., Potapov, A.M., Pohl, H.-J., Pramann, A., Riemann, H., Scheel, P.-T., Stosch, R., Wundrack, S., Zakel, S.

A metrological challenge is currently underway to replace the present definition of the kilogram. One prerequisite for this is that the Avogadro constant, NA, which defines the number of atoms in a mole, needs to be determined with a relative uncertainty of better than 2  ×  10−8. The method applied in this case is based on the x-ray crystal density experiment using silicon crystals. The first attempt, in which silicon of natural isotopic composition was used, failed. The solution chosen subsequently was the usage of silicon highly enriched in 28Si from Russia. First, this paper reviews previous efforts from the very first beginnings to an international collaboration with the goal of producing a 28Si single crystal with a mass of 5 kg, an enrichment greater than 0.9999 and of sufficient chemical purity. Then the paper describes the activities of a follow-up project, conducted by PTB, to produce a new generation of highly enriched silicon in order to demonstrate the quasi-industrial and reliable production of more than 12 kg of the 28Si material with enrichments of five nines. The intention of this project is also to show the availability of 28Si single crystals as a guarantee for the future realisation of the redefined kilogram.

2016, Schönherr, Piet, Zhang, Fengyu, Kojda, Danny, Mitdank, Rüdiger, Albrecht, Martin, Fischer, Saskia F., Hesjedal, Thorsten

Physical vapour deposition (PVD) is used to grow millimetre-long Bi2Te3 sub-micron belts catalysed by TiO2 nanoparticles. The catalytic efficiency of TiO2 nanoparticles for the nanostructure growth is compared with the catalyst-free growth employing scanning electron microscopy. The catalyst-coated and catalyst-free substrates are arranged side-by-side, and overgrown at the same time, to assure identical growth conditions in the PVD furnace. It is found that the catalyst enhances the yield of the belts. Very long belts were achieved with a growth rate of 28 nm/min. A ∼1-mm-long belt with a rectangular cross section was obtained after 8 h of growth. The thickness and width were determined by atomic force microscopy, and their ratio is ∼1:10. The chemical composition was determined to be stoichiometric Bi2Te3 using energy-dispersive X-ray spectroscopy. Temperature-dependent conductivity measurements show a characteristic increase of the conductivity at low temperatures. The room temperature conductivity of 0.20 × 10(5) S m (-1) indicates an excellent sample quality.

2017, Paik, Hanjong, Chen, Zhen, Lochocki, Edward, Seidner H., Ariel, Verma, Amit, Tanen, Nicholas, Park, Jisung, Uchida, Masaki, Shang, ShunLi, Zhou, Bi-Cheng, Brützam, Mario, Uecker, Reinhard, Liu, Zi-Kui, Jena, Debdeep, Shen, Kyle M., Muller, David A., Schlom, Darrell G.

Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.

2022, Lee, Ming-Hsun, Chou, Ta-Shun, Bin Anooz, Saud, Galazka, Zbigniew, Popp, Andreas, Peterson, Rebecca L.

Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for (100) Ga2O3. This is lower than the widely-used temperature of 470 °C for (010)-oriented Ga2O3. However, drastic degradation of the (100)-oriented contact resistance to ∼1.36 × 10−3 Ω·cm2 is observed when the anneal temperature was increased to 520 °C. Microscopy at the degraded ohmic contact revealed that the reacted Ti–TiOx interfacial layer has greatly expanded to 25–30 nm thickness and GaAu2 inclusions have formed between (310)-Ga2O3 planes and the Ti–TiOx layer. This degraded interface, which corresponds to the deterioration of ohmic contact properties, likely results from excess in-diffusion of Au and out-diffusion of Ga, concurrent with the expansion of the Ti–TiOx layer. These results demonstrate the critical influence of Ga2O3 anisotropy on the optimal post-metallization anneal temperature. Moreover, the observed Ti/Au contact degradation occurs for relatively moderate anneal conditions (520 °C for 1 min in N2), pointing to the urgent necessity of developing alternative metallization schemes for gallium oxide, including the use of Au-free electrodes

2022, Seyidov, Palvan, Varley, Joel B., Galazka, Zbigniew, Chou, Ta-Shun, Popp, Andreas, Fiedler, Andreas, Irmscher, Klaus

Optical absorption and photoconductivity measurements of Co-doped β-Ga2O3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionization cross sections are fitted by a phenomenological model considering electron-phonon coupling. The obtained fitting parameters: thermal ionization (zero-phonon transition) energy, Franck-Condon shift, and effective phonon energy are compared with corresponding values predicted by first principle calculations based on density functional theory. A (+/0) donor level ∼0.85 eV above the valence band maximum and a (0/-) acceptor level ∼2.1 eV below the conduction band minimum are consistently derived. Temperature-dependent electrical resistivity measurement at elevated temperatures (up to 1000 K) yields a thermal activation energy of 2.1 ± 0.1 eV, consistent with the position of the Co acceptor level. Furthermore, the results show that Co doping is promising for producing semi-insulating β-Ga2O3 crystals.

2022, Tetzner, Kornelius, Schewski, Robert, Popp, Andreas, Anooz, Saud Bin, Chou, Ta-Shun, Ostermay, Ina, Kirmse, Holm, Würfl, Joachim

The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measurements of TiW contacts annealed at temperatures between 400 and 900 °C. Optimum contact properties with a contact resistance down to 1.5 × 10-5 ω cm2 were achieved after annealing at 700 °C in nitrogen on highly doped β-Ga2O3. However, a significant contact resistance increase was observed at annealing temperatures above 700 °C. Cross-sectional analyses of the contacts using scanning transmission electron microscopy revealed the formation of a TiOx interfacial layer of 3-5 nm between TiW and β-Ga2O3. This interlayer features an amorphous structure and most probably possesses a high amount of vacancies and/or Ga impurities supporting charge carrier injection. Upon annealing at temperatures of 900 °C, the interlayer increases in thickness up to 15 nm, featuring crystalline-like properties, suggesting the formation of rutile TiO2. Although severe morphological changes at higher annealing temperatures were also verified by atomic force microscopy, the root cause for the contact resistance increase is attributed to the structural changes in thickness and crystallinity of the interfacial layer.

2021, Abdullayev, Amanmyrat, Klimm, Detlef, Kamutzki, Franz, Gurlo, Aleksander, Bekheet, Maged F.

Mullite is a promising material with its competitive thermochemical and mechanical properties. Although mullite could be obtained by several synthesis methods, the flux method emerges with its advantages over other methods. However, obtaining mullite whiskers with a high aspect ratio and length for ceramic reinforcements is still challenging. In this work, mullite whiskers were grown from AlF3-assisted flux. The addition of AlF3 to flux salt not only decreases the formation temperature of mullite to as low as 700 ​°C and suppresses the formation of corundum side phase, but also increases the length and aspect ratio of the whiskers. The obtained mullite whiskers were used as reinforcement for porous alumina monoliths prepared by the freeze casting route and subsequent sintering at 1500 ​°C. The fabricated mullite-alumina monoliths show competitive compressive strength of 25.7 ​MPa while having as high as 70.6% porosity, which makes them a potential candidate for membrane applications.