2018, Baeva, M.

The work is concerned with the Transfer Matrix Method for solving the steady-state Schrödinger equation applied for a unified evaluation of the emission current density from non-refractory cathodes. The method is applicable to arbitrary shapes of the potential barrier and its transmission probability is obtained without any analytical approximations. The Fermi-Dirac distribution for the free electrons in the metal is considered as a supply function. The results, obtained for a work function of the cathode material of 4.5 eV over a wide range of values of the surface temperature and the electric field strength, clearly show a growing deviation from those obtained by the classical Jeffreys-Wentzel-Kramers-Brillouin approximation with the increase of the electric field strength. Preliminary results are obtained to demonstrate the applicability of the Transfer Matrix method to the evaluation of the ion-assisted electron emission. A significant local enhancement of the emission current density is obtained as a result of the presence of an ion at a fixed position near the metal surface. The effect becomes very strongly pronounced at an appropriate value of the electric field strength, for which a resonant ion contribution appears.

2018, Hensel, René, Moh, Karsten, Arzt, Eduard

Reversible adhesion is the key functionality to grip, place, and release objects nondestructively. Inspired by nature, micropatterned dry adhesives are promising candidates for this purpose and have attracted the attention of research groups worldwide. Their enhanced adhesion compared to nonpatterned surfaces is frequently demonstrated. An important conclusion is that the contact mechanics involved is at least as important as the surface energy and chemistry. In this paper, the roles of the contact geometry and mechanical properties are reviewed. With a focus on applications, the effects of substrate roughness and of temperature variations, and the long-term performance of micropatterned adhesives are discussed. The paper provides a link between the current, detailed understanding of micropatterned adhesives and emerging applications.

2017-11-6, Mueller, Niclas S., Heeg, Sebastian, Peña Alvarez, Miriam, Kusch, Patryk, Wasserroth, Sören, Clark, Nick, Schedin, Fredrik, Parthenios, John, Papagelis, Konstantinos, Galiotis, Costas, Kalbáč, Martin, Vijayaraghavan, Aravind, Huebner, Uwe, Gorbachev, Roman, Frank, Otakar, Reich, Stephanie

The properties of graphene depend sensitively on strain and doping affecting its behavior in devices and allowing an advanced tailoring of this material. A knowledge of the strain configuration, i.e. the relative magnitude of the components of the strain tensor, is particularly crucial, because it governs effects like band-gap opening, pseudo-magnetic fields, and induced superconductivity. It also enters critically in the analysis of the doping level. We propose a method for evaluating unknown strain configurations and simultaneous doping in graphene using Raman spectroscopy. In our analysis we first extract the bare peak shift of the G and 2D modes by eliminating their splitting due to shear strain. The shifts from hydrostatic strain and doping are separated by a correlation analysis of the 2D and G frequencies, where we find Delta omega(2D)/Delta omega(G) = 2.21 +/- 0.05 for pure hydrostatic strain. We obtain the local hydrostatic strain, shear strain and doping without any assumption on the strain configuration prior to the analysis, as we demonstrate for two model cases: Graphene under uniaxial stress and graphene suspended on nanostructures that induce strain. Raman scattering with circular corotating polarization is ideal for analyzing frequency shifts, especially for weak strain when the peak splitting by shear strain cannot be resolved.

2017, Papadopoulos, Lia, Kim, Jason Z., Kurths, Jürgen, Bassett, Danielle S.

Synchronization of non-identical oscillators coupled through complex networks is an important example of collective behavior, and it is interesting to ask how the structural organization of network interactions influences this process. Several studies have explored and uncovered optimal topologies for synchronization by making purposeful alterations to a network. On the other hand, the connectivity patterns of many natural systems are often not static, but are rather modulated over time according to their dynamics. However, this co-evolution and the extent to which the dynamics of the individual units can shape the organization of the network itself are less well understood. Here, we study initially randomly connected but locally adaptive networks of Kuramoto oscillators. In particular, the system employs a co-evolutionary rewiring strategy that depends only on the instantaneous, pairwise phase differences of neighboring oscillators, and that conserves the total number of edges, allowing the effects of local reorganization to be isolated. We find that a simple rule-which preserves connections between more outof- phase oscillators while rewiring connections between more in-phase oscillators-can cause initially disordered networks to organize into more structured topologies that support enhanced synchronization dynamics. We examine how this process unfolds over time, finding a dependence on the intrinsic frequencies of the oscillators, the global coupling, and the network density, in terms of how the adaptive mechanism reorganizes the network and influences the dynamics. Importantly, for large enough coupling and after sufficient adaptation, the resulting networks exhibit interesting characteristics, including degree-frequency and frequency-neighbor frequency correlations. These properties have previously been associated with optimal synchronization or explosive transitions in which the networks were constructed using global information. On the contrary, by considering a time-dependent interplay between structure and dynamics, this work offers a mechanism through which emergent phenomena and organization can arise in complex systems utilizing local rules.

2017, Huang, Huiying, Trotta, Rinaldo, Huo, Yongheng, Lettner, Thomas, Wildmann, Johannes S., Martín-Sánchez, Javier, Huber, Daniel, Reindl, Marcus, Zhang, Jiaxiang, Zallo, Eugenio, Schmidt, Oliver G., Rastelli, Armando

We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.

2017, Boschker, Jos E., Calarco, Raffaella

Phase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging. Phase change materials with a high structural quality, such as offered by epitaxial films, are needed in order to study the fundamental properties of phase change materials and to improve our understanding of this materials class. Here, we review the progress made in the growth of crystalline phase change materials by physical methods, such as molecular beam epitaxy, sputtering, and pulsed laser deposition. First, we discuss the difference and similarities between these physical deposition methods and the crystal structures of Ge2Sb2Te5, the prototype phase change material. Next, we focus on the growth of epitiaxial GST films on (0 0 1)- and (1 1 1)-oriented substrates, leading to the conclusion that (1 1 1)-oriented substrates are preferred for the growth of phase change materials. Finally, the growth of GeTe/Sb2Te3 superlattices on amorphous and single crystalline substrates is discussed.

2018, Dou, Shaoxu, Qi, Mengke, Chen, Cong, Zhou, Hong, Wang, Yong, Shang, Zhengguo, Yang, Jing, Wang, Dengpan, Mu, Xiaojing

A piezoelectric AlN-on-SOI structured MEMS Lamb wave resonator (LWR) is presented for high-temperature strain measurement. The LWR has a composite membrane of a 1 μm thick AlN film and a 30 μm thick device silicon layer. The excited acoustic waves include Rayleigh wave and Lamb waves. A tensile strain sensor has been prepared with one LWR mounted on a uniaxial tensile plate, and its temperature characteristics from 15.4°C to 250°C and tensile strain behaviors from 0 μϵ to 400 μϵ of Rayleigh wave and S4 mode Lamb wave were tested. The temperature test verifies the adaptability of the tensile strain sensor to temperature up to 250°C, and S4 mode Lamb wave and Rayleigh wave represent almost the same temperature characteristics. The strain test demonstrates that S4 mode Lamb wave shows much higher strain sensitivity (-0.48 ppm/μϵ) than Rayleigh wave (0.05 ppm/μϵ) and confirms its advantage of strain sensitivity. Finally, for this one-LWR strain sensor, a method of beat frequency between S4 mode Lamb wave and Rayleigh wave is proposed for temperature compensation and high-sensitivity strain readout.

2018-3-27, Burlakov, Vladimir V., Bogdanov, Vyacheslav S., Arndt, Perdita, Spannenberg, Anke, Rosenthal, Uwe, Beweries, Torsten, Shur, Vladimir B.

The crystal structure of the title zwitterionic zirconocene complex containing a furan­one unit, [AlZr(C10H15)2(C4H9)3(C9H18O2Si2)], is reported. On reacting a zircona­furan­one with two equivalents of HAl(i-Bu)2, disproportionation of the Lewis acid results in the formation of a triiso­butyl­aluminium fragment, Al(i-Bu)3, which coordinates to the exocyclic carbonyl O atom of the zircona­furan­one ring. Single-crystal X-ray diffraction reveals that the zircona­furan­one ring remains intact with coordination of the aluminium to the exocyclic O atom. One of the i-butyl groups is disordered over two sets of sites, with an occupancy ratio of 0.731 (3):0.269 (3).

2017, Wiedensohler, A., Wiesner, A., Weinhold, K., Birmili, W., Hermann, M., Merkel, M., Müller, T., Pfeifer, S., Schmidt, A., Tuch, T., Velarde, F., Quincey, P., Seeger, S., Nowak, A.

Mobility particle size spectrometers (MPSS) belong to the essential instruments in aerosol science that determine the particle number size distribution (PNSD) in the submicrometer size range. Following calibration procedures and target uncertainties against standards and reference instruments are suggested for a complete MPSS quality assurance program: (a) calibration of the CPC counting efficiency curve (within 5% for the plateau counting efficiency; within 1 nm for the 50% detection efficiency diameter), (b) sizing calibration of the MPSS, using a certified polystyrene latex (PSL) particle size standard at 203 nm (within 3%), (c) intercomparison of the PNSD of the MPSS (within 10% and 20% of the dN/dlogDP concentration for the particle size range 20–200 and 200–800 nm, respectively), and (d) intercomparison of the integral PNC of the MPSS (within 10%). Furthermore, following measurement uncertainties have been investigated: (a) PSL particle size standards in the range from 100 to 500 nm match within 1% after sizing calibration at 203 nm. (b) Bipolar diffusion chargers based on the radioactive nuclides Kr85, Am241, and Ni63 and a new ionizer based on corona discharge follow the recommended bipolar charge distribution, while soft X-ray-based charges may alter faster than expected. (c) The use of a positive high voltage supply show a 10% better performance than a negative one. (d) The intercomparison of the integral PNC of an MPSS against the total number concentration is still within the target uncertainty at an ambient pressure of approximately 500 hPa. Copyright © 2018 Published with license by American Association for Aerosol Research.

2017, Schumacher, P., Mayr, S.G., Rauschenbach, B.

Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.