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Now showing 1 - 10 of 20
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    Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si
    (Washington, DC : ACS, 2022) Marzban, Bahareh; Seidel, Lukas; Liu, Teren; Wu, Kui; Kiyek, Vivien; Zoellner, Marvin Hartwig; Ikonic, Zoran; Schulze, Joerg; Grützmacher, Detlev; Capellini, Giovanni; Oehme, Michael; Witzens, Jeremy; Buca, Dan
    SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T0. Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.
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    Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms
    (Washington, DC : ACS, 2017) Huang, Huiying; Trotta, Rinaldo; Huo, Yongheng; Lettner, Thomas; Wildmann, Johannes S.; Martín-Sánchez, Javier; Huber, Daniel; Reindl, Marcus; Zhang, Jiaxiang; Zallo, Eugenio; Schmidt, Oliver G.; Rastelli, Armando
    We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.
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    Lasing by Template-Assisted Self-Assembled Quantum Dots
    (Weinheim : Wiley-VCH, 2023) Aftenieva, Olha; Sudzius, Markas; Prudnikau, Anatol; Adnan, Mohammad; Sarkar, Swagato; Lesnyak, Vladimir; Leo, Karl; Fery, Andreas; König, Tobias A.F.
    Miniaturized laser sources with low threshold power are required for integrated photonic devices. Photostable core/shell nanocrystals are well suited as gain material and their laser properties can be exploited by direct patterning as distributed feedback (DFB) lasers. Here, the 2nd-order DFB resonators tuned to the photoluminescence wavelength of the QDs are used. Soft lithography based on template-assisted colloidal self-assembly enables pattern resolution in the subwavelength range. Combined with the directional Langmuir–Blodgett arrangement, control of the waveguide layer thickness is further achieved. It is shown that a lasing threshold of 5.5 mJ cm−2 is reached by a direct printing method, which can be further reduced by a factor of ten (0.6 mJ cm−2) at an optimal waveguide thickness. Moreover, it is discussed how one can adjust the DFB geometries to any working wavelength. This colloidal approach offers prospects for applications in bioimaging, biomedical sensing, anti-counterfeiting, or displays.
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    Engineering Micropatterned Dry Adhesives: From Contact Theory to Handling Applications
    (Weinheim : Wiley-VCH, 2018) Hensel, René; Moh, Karsten; Arzt, Eduard
    Reversible adhesion is the key functionality to grip, place, and release objects nondestructively. Inspired by nature, micropatterned dry adhesives are promising candidates for this purpose and have attracted the attention of research groups worldwide. Their enhanced adhesion compared to nonpatterned surfaces is frequently demonstrated. An important conclusion is that the contact mechanics involved is at least as important as the surface energy and chemistry. In this paper, the roles of the contact geometry and mechanical properties are reviewed. With a focus on applications, the effects of substrate roughness and of temperature variations, and the long-term performance of micropatterned adhesives are discussed. The paper provides a link between the current, detailed understanding of micropatterned adhesives and emerging applications.
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    Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction
    (Weinheim : Wiley-VCH, 2022) Mazzolini, Piero; Fogarassy, Zsolt; Parisini, Antonella; Mezzadri, Francesco; Diercks, David; Bosi, Matteo; Seravalli, Luca; Sacchi, Anna; Spaggiari, Giulia; Bersani, Danilo; Bierwagen, Oliver; Janzen, Benjamin Moritz; Marggraf, Marcella Naomi; Wagner, Markus R.; Cora, Ildiko; Pécz, Béla; Tahraoui, Abbes; Bosio, Alessio; Borelli, Carmine; Leone, Stefano; Fornari, Roberto
    Unintentionally doped (001)-oriented orthorhombic κ-Ga2O3 epitaxial films on c-plane sapphire substrates are characterized by the presence of ≈ 10 nm wide columnar rotational domains that can severely inhibit in-plane electronic conduction. Comparing the in- and out-of-plane resistance on well-defined sample geometries, it is experimentally proved that the in-plane resistivity is at least ten times higher than the out-of-plane one. The introduction of silane during metal-organic vapor phase epitaxial growth not only allows for n-type Si extrinsic doping, but also results in the increase of more than one order of magnitude in the domain size (up to ≈ 300 nm) and mobility (highest µ ≈ 10 cm2V−1s−1, with corresponding lowest ρ ≈ 0.2 Ωcm). To qualitatively compare the mean domain dimension in κ-Ga2O3 epitaxial films, non-destructive experimental procedures are provided based on X-ray diffraction and Raman spectroscopy. The results of this study pave the way to significantly improved in-plane conduction in κ-Ga2O3 and its possible breakthrough in new generation electronics. The set of cross-linked experimental techniques and corresponding interpretation here proposed can apply to a wide range of material systems that suffer/benefit from domain-related functional properties.
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    Heterobimetallic conducting polymers based on salophen complexes via electrosynthesis
    (London [u.a.] : RSC, 2023) Bia, Francesca; Gualandi, Isacco; Griebel, Jan; Rasmussen, Leon; Hallak, Bassam; Tonelli, Domenica; Kersting, Berthold
    In this work, we report the first electrochemical synthesis of two copolymeric bimetallic conducting polymers by a simple anodic electropolymerization method. The adopted precursors are electroactive transition metal (M = Ni, Cu and Fe) salophen complexes, which can be easily obtained by direct chemical synthesis. The resulting films, labeled poly-NiCu and poly-CuFe, were characterized by cyclic voltammetry in both organic and aqueous media, attenuated total reflectance Fourier transform infrared spectroscopy, UV-vis spectroscopy, scanning electron microscopy, and coupled energy dispersive X-ray spectroscopy. The films are conductive and exhibit great electrochemical stability in both organic and aqueous media (resistant over 100 cycles without significant loss in current response or changes in electrochemical behavior), which makes them good candidates for an array of potential applications. Electrochemical detection of ascorbic acid was performed using both materials.
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    A general approach for all-visible-light switching of diarylethenes through triplet sensitization using semiconducting nanocrystals
    (London [u.a.] : RSC, 2022) Hou, Lili; Larsson, Wera; Hecht, Stefan; Andréasson, Joakim; Albinsson, Bo
    Coupling semiconducting nanocrystals (NCs) with organic molecules provides an efficient route to generate and transfer triplet excitons. These excitons can be used to power photochemical transformations such as photoisomerization reactions using low energy radiation. Thus, it is desirable to develop a general approach that can efficiently be used to control photoswitches using all-visible-light aiming at future applications in life- and materials sciences. Here, we demonstrate a simple ‘cocktail’ strategy that can achieve all-visible-light switchable diarylethenes (DAEs) through triplet energy transfer from the hybrid of CdS NCs and phenanthrene-3-carboxylic acid, with high photoisomerization efficiency and improved fatigue resistance. The size-tunable excitation energies of CdS NCs make it possible to precisely match the clear spectral window of the relevant DAE photoswitch. We demonstrate reversible all-visible-light photoisomerization of a series of DAE derivatives both in the liquid and solid state, even in the presence of oxygen. Our general strategy is promising for fabrication of all-visible-light activated optoelectronic devices as well as memories, and should in principle be adaptable to photopharmacology.
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    Generation of millijoule few-cycle pulses at 5 μm by indirect spectral shaping of the idler in an optical parametric chirped pulse amplifier
    (Washington, DC : Soc., 2018) Bock, Martin; Grafenstein, Lorenz von; Griebner, Uwe; Elsaesser, Thomas
    Spectral pulse shaping in a high-intensity midwave-infrared (MWIR) optical parametric chirped pulse amplifier (OPCPA) operating at 1 kHz repetition rate is reported. We successfully apply a MWIR spatial light modulator (SLM) for the generation of ultrashort idler pulses at 5 μm wavelength. Only bulk optics and active phase control of the 3.5 μm signal pulses via the SLM are employed for generating compressed idler pulses with a duration of 80 fs. The 80-fs pulse duration corresponds to less than five optical cycles at the central wavelength of 5.0 μm. The pulse energy amounts to 1.0 mJ, which translates into a peak power of 10 GW. The generated pulse parameters represent record values for high-intensity MWIR OPCPAs.
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    Searching for order in atmospheric pressure plasma jets
    (Bristol : IOP Publ., 2017-11-10) Schäfer, Jan; Sigeneger, Florian; Šperka, Jiří; Rodenburg, Cornelia; Foest, Rüdiger
    The self-organized discharge behaviour occurring in a non-thermal radio-frequency plasma jet in rare gases at atmospheric pressure was investigated. The frequency of the azimuthal rotation of filaments in the active plasma volume and their inclination were measured along with the gas temperature under varying discharge conditions. The gas flow and heating were described theoretically by a three-dimensional hydrodynamic model. The rotation frequencies obtained by both methods qualitatively agree. The results demonstrate that the plasma filaments forming an inclination angle α with the axial gas velocity uz are forced to a transversal movement with the velocity uφ=tan(α)*uz, which is oriented in the inclination direction. Variations of ${u}_{\phi }$ in the model reveal that the observed dynamics minimizes the energy loss due to convective heat transfer by the gas flow. The control of the self-organization regime motivates the application of the plasma jet for precise and reproducible material processing.
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    Quenching of material dependence in few-cycle driven electron acceleration from nanoparticles under many-particle charge interaction
    (London [u.a.] : Taylor & Francis, 2016-12-25) Rupp, Philipp; Seiffert, Lennart; Liu, Qingcao; Süßmann, Frederik; Ahn, Byungnam; Förg, Benjamin; Schäfer, Christian G.; Gallei, Markus; Mondes, Valerie; Kessel, Alexander; Trushin, Sergei; Graf, Christina; Rühl, Eckart; Lee, Jinwoo; Kim, Min Su; Kim, Dong Eon; Fennel, Thomas; Kling, Matthias F.; Zherebtsov, Sergey
    The excitation of nanoscale near-fields with ultrashort and intense laser pulses of well-defined waveform enables strongly spatially and temporally localized electron emission, opening up the possibility for the generation of attosecond electron pulses. Here, we investigate the electron photoemission from isolated nanoparticles of different materials in few-cycle laser fields at intensities where the Coulomb field of the ionized electrons and residual ions significantly contribute to the electron acceleration process. The dependences of the electron cut-off energy on the material’s dielectric properties and electron binding energy are investigated systematically in both experiments and semi-classical simulations. We find that for sufficiently high near-field intensities the material dependence of the acceleration in the enhanced near-fields is quenched by many-particle charge-interaction.