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End date: 2023 × Start date: 2023 × DDC: 530 × Subject: Konferenzschrift × WGL Institute: IKZ ×

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    The spin-flip scattering effect in the spin transport in silicon doped with bismuth
    (Bristol : IOP Publ., 2017) Ezhevskii, A.A.; Detochenko, A.P.; Soukhorukov, A.V.; Guseinov, D.V.; Kudrin, A.V.; Abrosimov, N.V.; Riemann, H.
    Spin transport of conduction electrons in silicon samples doped with bismuth in the 1.1•1013 - 7.7•1015 cm-3 concentration range was studied by the Hall effect measurements. The dependence of the Hall voltage magnitude on the magnetic field is the sum of the normal and spin Hall effects. The electrons are partially polarized by an external magnetic field and are scattered by the bismuth spin-orbit potential. Spin-flip scattering results in the additional electromotive force which compensates the normal Hall effect in strong magnetic fields.
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    Computational Simulations of the Lateral-Photovoltage-Scanning-Method
    (London [u.a.] : Institute of Physics, 2018) Kayser, S.; Lüdge, A.; Böttcher, K.
    The major task for the Lateral-Photovoltage-Scanning-Method is to detect doping striations and the shape of the solid-liquid-interface of an indirect semiconductor crystal. This method is sensitive to the gradient of the charge carrier density. Attempting to simulate the signal generation of the LPS-Method, we are using a three dimensional Finite Volume approach for solving the van Roosbroeck equations with COMSOL Multiphysics in a silicon sample. We show that the simulated LPS-voltage is directly proportional to the gradient of a given doping distribution, which is also the case for the measured LPS-voltage.
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    Relaxation of Coulomb States in semiconductors probed by FEL radiation
    (Les Ulis : EDP Sciences, 2018) Zhukavin, R.Kh.; Kovalevsky, K.A.; Tsyplenkov, V.V.; Pavlov, S.G.; Hübers, H-W.; Choporova, Yu.Yu.; Knyazev, B.A.; Klopf, J.M.; Redlich, B.; Abrosimov, N.V.; Astrov, Yu.A.; Shastin, V.N.; Silaev, A.A.
    This article has no abstract.