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Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.
Microstructure Evaluation and Impurities in La Containing Silicon Oxynitrides
Oxynitride glasses are not yet commercialised primarily due to the impurities present in the network of these glasses. In this work, we investigated the microstructure and instinctive defects in nitrogen rich La-Si-O-N glasses. Glasses were prepared by heating a powder mixture of pure La metal, Si3N4, and SiO2 in a nitrogen atmosphere at 1650-1800 °C. The microstructure and impurities in the glasses were examined by optical microscopy, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy in conjunction with electron energy-loss spectroscopy. Analyses showed that the glasses contain a small amount of spherical metal silicide particles, mostly amorphous or poorly crystalline, and having sizes typically ranging from 1 µm and less. The amount of silicide was estimated to be less than 2 vol. %. There was no systematic relation between silicide formation and glass composition or preparation temperature. The microstructure examination revealed that the opacity of these nitrogen rich glasses is due to the elemental Si arise from the decomposition reaction of silicon nitride and silicon oxide, at a high temperature above ~1600 °C and from the metallic silicide particles formed by the reduction of silicon oxide and silicon nitride at an early stage of reaction to form a silicide intermetallic with the La metal.