Search Results
Photoluminescence at room temperature of liquid-phase crystallized silicon on glass
2016, Vetter, Michael, Schwuchow, Anka, Andrä, Gudrun
The room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.
Peculiarities of electronic structure and composition in ultrasound milled silicon nanowires
2020, Parinova, E.V., Pisliaruk, A.K., Schleusener, A., Koyuda, D.A., Chumakov, R.G., Lebedev, A.M., Ovsyannikov, R., Makarova, A., Smirnov, D., Sivakov, V., Turishchev, S.Yu.
The combined X-ray absorption and emission spectroscopy approach was applied for the detailed electronic structure and composition studies of silicon nanoparticles produced by the ultrasound milling of heavily and lowly doped Si nanowires formed by metal-assisted wet chemical etching. The ultrasoft X-ray emission spectroscopy and synchrotron based X-ray absorption near edges structure spectroscopy techniques were utilize to study the valence and conduction bands electronic structure together with developed surface phase composition qualitative analysis. Our achieved results based on the implemented surface sensitive techniques strongly suggest that nanoparticles under studies show a significant presence of the silicon suboxides depending on the pre-nature of initial Si wafers. The controlled variation of the Si nanoparticles surface composition and electronic structure, including band gap engineering, can open a new prospective for a wide range Si-based nanostructures application including the integration of such structures with organic or biological systems. © 2020
Scalable, high power line focus diode laser for crystallizing of silicon thin films
2010, Lichtenstein, N., Baettig, R., Brunner, R., Müller, J., Valk, B., Gawlik, A., Bergmann, J., Falk, F.
We present the design and performance of a diode laser module producing a high intensity line focus at 808 nm for material processing. The design is based on a linear array of 7 laser bars and beam forming optics featuring a micro-optic homogenizer. The module delivers a total output power of 900 W at 140 A and peak intensity created in the focus area of 10.3 kW/cm2. Two systems with line length of 5 cm and 10 cm at a large working distance of 110 mm have been realized. The chosen concept allows scaling in length by joining multiple modules which is of interest for material processing in industrial applications. Application results from laser crystallization of amorphous silicon seed layers used in the fabrication of photovoltaic cells for solar panels are given.
Thermally induced evolution of the structure and optical properties of silicon nanowires
2020, Mussabek, Gauhar, Lysenko, Vladimir, Yermukhamed, Dana, Sivakov, Vladimir, Yu. Timoshenko, Victor
In the present paper, we report on the investigation of thermal annealing (TA) effect on structural and optical properties of crystalline silicon nanowires produced by metal-assisted chemical etching approach. In particular, the impact of TA on nanowire length, relative volume and size distribution of voids is described in terms of Lifshitz-Slyozov-Wagner theory considering the TA induced Oswald ripening in the SiNW arrays. It was also found that TA leads to a decrease of the SiNWs total reflection in the wide UV–VIS-IR spectral range. The reported effects can be used for tuning of crystalline SiNWs arrays in view of their further applications in photonics related fields. © 2020 The Authors
Process flow to integrate nanostructures on silicon grass in surface micromachined systems
2016, Mehner, H., Müller, L., Biermann, S., Hänschke, F., Hoffmann, M.
The process flow to integrate metallic nanostructures in surface micromachining processes is presented. The nanostructures are generated by evaporation of microstructured silicon grass with metal. The process flow is based on the lift-off of a thin amorphous silicon layer deposited using a CVD process. All steps feature a low temperature load beneath 120 °C and high compatibility with many materials as only well-established chemicals are used. As a result metallic nanostructures usable for optical applications can be generated as part of multilayered microsystems fabricated in surface micromachining.