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End date: 2024 × Start date: 2020 × Has files: Yes × Publisher: Bristol : IOP × WGL Institute: PDI ×

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Now showing 1 - 3 of 3
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    Wavefunction of polariton condensates in a tunable acoustic lattice
    (Bristol : IOP, 2012) Cerda-Méndez, E.A.; Krizhanovskii, D.N.; Biermann, K.; Hey, R.; Skolnick, M.S.; Santos, P.V.
    We study the spatial coherence of polariton condensates subjected to coherent modulation by a one-dimensional tunable acoustic potential.We use an interferometric technique to measure the amplitude and phase of the macroscopic condensate wavefunction. By increasing the acoustic modulation amplitude, we track the transition from the extended wavefunction of the unperturbed condensate to a regime where the wavefunction is spatially modulated and then to a fully confined regime, where independent condensates form at the minima of the potential with negligible particle tunneling between adjacent sites.
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    Dynamics of indirect exciton transport by moving acoustic fields
    (Bristol : IOP, 2014) Violante, A.; Cohen, K.; Lazić, S.; Hey, R.; Rapaport, R.; Santos, P.V.
    We report on the modulation of indirect excitons (IXs) as well as their transport by moving periodic potentials produced by surface acoustic waves (SAWs). The potential modulation induced by the SAW strain modifies both the band gap and the electrostatic field in the quantum wells confining the IXs, leading to changes in their energy. In addition, this potential captures and transports IXs over several hundreds of μm. While the IX packets keep to a great extent their spatial shape during transport by the moving potential, the effective transport velocity is lower than the SAW group velocity and increases with the SAW amplitude. This behavior is attributed to the capture of IXs by traps along the transport path, thereby increasing the IX transit time. The experimental results are well-reproduced by an analytical model for the interaction between trapping centers and IXs during transport.
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    Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
    (Bristol : IOP, 2017) Lim, Carolin B.; Ajay, Akhil; Lähnemann, Jonas; Bougerol, Catherine; Monroy, Eva
    This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWIR, MIR, and FIR, respectively). The standard c-plane crystallographic orientation is considered for wells absorbing in the SWIR and MIR spectral regions, whereas the FIR structures are grown along the nonpolar m-axis. In all cases, we compare the characteristics of Ge-doped and Si-doped samples with the same design and various doping levels. The use of Ge appears to improve the mosaicity of the highly lattice-mismatched GaN/AlN heterostructures. However, when reducing the lattice mismatch, the mosaicity is rather determined by the substrate and does not show any dependence on the dopant nature or concentration. From the optical point of view, by increasing the dopant density, we observe a blueshift of the photoluminescence in polar samples due to the screening of the internal electric field by free carriers. In the ISB absorption, on the other hand, there is a systematic improvement of the linewidth when using Ge as a dopant for high doping levels, whatever the spectral region under consideration (i.e. different QW size, barrier composition and crystallographic orientation).