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    Restoring a nearly free-standing character of graphene on Ru(0001) by oxygen intercalation
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2016) Voloshina, Elena; Berdunov, Nikolai; Dedkov, Yuriy
    Realization of a free-standing graphene is always a demanding task. Here we use scanning probe microscopy and spectroscopy to study the crystallographic structure and electronic properties of the uniform nearly free-standing graphene layers obtained by intercalation of oxygen monolayer in the “strongly” bonded graphene/Ru(0001) interface. Spectroscopic data show that such graphene layer is heavily p-doped with the Dirac point located at 552 meV above the Fermi level. Experimental data are understood within density-functional theory approach and the observed effects are in good agreement with the theoretical data.
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    Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications
    ([London] : Macmillan Publishers Limited, part of Springer Nature, 2016) Tonkikh, A.A.; Voloshina, E.N.; Werner, P.; Blumtritt, H.; Senkovskiy, B.; Güntherodt, G.; Parkin, S.S.P.; Dedkov, Yu. S.
    Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.