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Now showing 1 - 7 of 7
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    Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
    (Melville, NY : AIP Publ., 2019) Galazka, Zbigniew; Ganschow, Steffen; Schewski, Robert; Irmscher, Klaus; Klimm, Detlef; Kwasniewski, Albert; Pietsch, Mike; Fiedler, Andreas; Schulze-Jonack, Isabelle; Albrecht, Martin; Schröder, Thomas; Bickermann, Matthias
    Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 °C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 Ωcm, 3 × 1018–9 × 1019 cm−3, and 107 cm2 V−1 s−1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 °C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coefficient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 Å, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel films.
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    Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
    (Melville, NY : AIP Publ., 2019) Schewski, R.; Lion, K.; Fiedler, A.; Wouters, C.; Popp, K.; Levchenko, S.V.; Schulz, T.; Schmidbauer, M.; Bin Anooz, S.; Grüneberg, R.; Galazka, Z.; Wagner, G.; Irmscher, K.; Scheffler, M.; Draxl, C.; Albrecht, M.
    We present a systematic study on the influence of the miscut orientation on structural and electronic properties in the homoepitaxial growth on off-oriented β-Ga2O3 (100) substrates by metalorganic chemical vapour phase epitaxy. Layers grown on (100) substrates with 6° miscut toward the [001⎯⎯] direction show high electron mobilities of about 90 cm2 V−1 s−1 at electron concentrations in the range of 1–2 × 1018 cm−3, while layers grown under identical conditions but with 6° miscut toward the [001] direction exhibit low electron mobilities of around 10 cm2 V−1 s−1. By using high-resolution scanning transmission electron microscopy and atomic force microscopy, we find significant differences in the surface morphologies of the substrates after annealing and of the layers in dependence on their miscut direction. While substrates with miscuts toward [001⎯⎯] exhibit monolayer steps terminated by (2⎯⎯01) facets, mainly bilayer steps are found for miscuts toward [001]. Epitaxial growth on both substrates occurs in step-flow mode. However, while layers on substrates with a miscut toward [001⎯⎯] are free of structural defects, those on substrates with a miscut toward [001] are completely twinned with respect to the substrate and show stacking mismatch boundaries. This twinning is promoted at step edges by transformation of the (001)-B facets into (2⎯⎯01) facets. Density functional theory calculations of stoichiometric low index surfaces show that the (2⎯⎯01) facet has the lowest surface energy following the (100) surface. We conclude that facet transformation at the step edges is driven by surface energy minimization for the two kinds of crystallographically inequivalent miscut orientations in the monoclinic lattice of β-Ga2O3.
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    The electronic structure of ϵ-Ga2O3
    (Melville, NY : AIP Publ., 2019) Mulazzi, M.; Reichmann, F.; Becker, A.; Klesse, W.M.; Alippi, P.; Fiorentini, V.; Parisini, A.; Bosi, M.; Fornari, R.
    The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.
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    Attosecond investigation of extreme-ultraviolet multi-photon multi-electron ionization
    (Washington, DC : OSA, 2022) Kretschmar, M.; Hadjipittas, A.; Major, B.; Tümmler, J.; Will, I.; Nagy, T.; Vrakking, M. J. J.; Emmanouilidou, A.; Schütte, B.
    Multi-electron dynamics in atoms and molecules very often occur on sub- to few-femtosecond time scales. The available intensities of extreme-ultraviolet (XUV) attosecond pulses have previously allowed the time-resolved investigation of two-photon, two-electron interactions. Here we study double and triple ionization of argon atoms involving the absorption of up to five XUV photons using a pair of intense attosecond pulse trains (APTs). By varying the time delay between the two APTs with attosecond precision and the spatial overlap with nanometer precision, we obtain information on complex nonlinear multi-photon ionization pathways. Our experimental and numerical results show that Ar2+ is predominantly formed by a sequential two-photon process, whereas the delay dependence of the Ar3+ ion yield exhibits clear signatures of the involvement of a simultaneous two-photon absorption process. Our experiment suggests that it is possible to investigate multi-electron dynamics using attosecond pulses for both pumping and probing the dynamics.
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    Compact intense extreme-ultraviolet source
    (Washington, DC : OSA, 2021) Major, Balázs; Ghafur, Omair; Kovács, Katalin; Varjú, Katalin; Tosa, Valer; Vrakking, Marc J. J.; Schütte, B.
    High-intensity laser pulses covering the ultraviolet to terahertz spectral regions are nowadays routinely generated in a large number of laboratories. In contrast, intense extreme-ultraviolet (XUV) pulses have only been demonstrated using a small number of sources including free-electron laser facilities [1-3] and long high-harmonic generation (HHG) beamlines [4-9]. Here we demonstrate a concept for a compact intense XUV source based on HHG that is focused to an intensity of $2 \times 10^{14}$ W/cm$^2$, with a potential increase up to $10^{17}$ W/cm$^2$ in the future. Our approach uses tight focusing of the near-infrared (NIR) driving laser and minimizes the XUV virtual source size by generating harmonics several Rayleigh lengths away from the NIR focus. Accordingly, the XUV pulses can be refocused to a small beam waist radius of 600 nm, enabling the absorption of up to four XUV photons by a single Ar atom in a setup that fits on a modest (2 m) laser table. Our concept represents a straightforward approach for the generation of intense XUV pulses in many laboratories, providing novel opportunities for XUV strong-field and nonlinear optics experiments, for XUV-pump XUV-probe spectroscopy and for the coherent diffractive imaging of nanoscale structures.
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    Linear chirped slope profile for spatial calibration in slope measuring deflectometry
    (Melville, NY : American Institute of Physics, 2016) Siewert, F.; Zeschke, T.; Arnold, T.; Paetzelt, H; Yashchuk, V.V.
    Slope measuring deflectometry is commonly used by the X-ray optics community to measure the long-spatial-wavelength surface figure error of optical components dedicated to guide and focus X-rays under grazing incidence condition at synchrotron and free electron laser beamlines. The best performing instruments of this kind are capable of absolute accuracy on the level of 30-50 nrad. However, the exact bandwidth of the measurements, determined at the higher spatial frequencies by the instrument’s spatial resolution, or more generally by the instrument’s modulation transfer function (MTF) is hard to determine. An MTF calibration method based on application of a test surface with a one-dimensional (1D) chirped height profile of constant amplitude was suggested in the past. In this work, we propose a new approach to designing the test surfaces with a 2D-chirped topography, specially optimized for MTF characterization of slope measuring instruments. The design of the developed MTF test samples based on the proposed linear chirped slope profiles (LCSPs) is free of the major drawback of the 1D chirped height profiles, where in the slope domain, the amplitude strongly increases with the local spatial frequency of the profile. We provide the details of fabrication of the LCSP samples. The results of first application of the developed test samples to measure the spatial resolution of the BESSY-NOM at different experimental arrangements are also presented and discussed.
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    Photon-electron coincidence experiments at synchrotron radiation facilities with arbitrary bunch modes
    ([S.l.] : American Institute of Physics, 2021) Ozga, C.; Honisch, C.; Schmidt, P.; Holzapfel, X.; Zindel, C.; Küstner-Wetekam, C.; Richter, C.; Hergenhahn, U.; Ehresmann, A.; Knie, A.; Hans, A.
    We report the adaptation of an electron–photon coincidence detection scheme to the multibunch hybrid mode of the synchrotron radiation source BESSY II (Helmholtz-Zentrum Berlin). Single-event-based data acquisition and evaluation, combined with the use of relative detection times between the coincident particles, enable the acquisition of proper coincidence signals from a quasi-continuous excitation pattern. The background signal produced by accidental coincidences in the time difference representation is modeled using the non-coincident electron and photon spectra. We validate the method by reproducing previously published results, which were obtained in the single bunch mode, and illustrate its usability for the multibunch hybrid mode by investigating the photoionization of CO2 into CO+2 B satellite states, followed by subsequent photon emission. The radiative lifetime obtained and the electron binding energy are in good agreement with earlier publications. We expect this method to be a useful tool to extend the versatility of coincident particle detection to arbitrary operation modes of synchrotron radiation facilities and other excitation sources without the need for additional experimental adjustments.