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Now showing 1 - 10 of 30
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    Distribution of Cracks in a Chain of Atoms at Low Temperature
    (Cham (ZG) : Springer International Publishing AG, 2021) Jansen, Sabine; König, Wolfgang; Schmidt, Bernd; Theil, Florian
    We consider a one-dimensional classical many-body system with interaction potential of Lennard–Jones type in the thermodynamic limit at low temperature 1/β∈(0,∞). The ground state is a periodic lattice. We show that when the density is strictly smaller than the density of the ground state lattice, the system with N particles fills space by alternating approximately crystalline domains (clusters) with empty domains (voids) due to cracked bonds. The number of domains is of the order of Nexp(−βesurf/2) with esurf>0 a surface energy. For the proof, the system is mapped to an effective model, which is a low-density lattice gas of defects. The results require conditions on the interactions between defects. We succeed in verifying these conditions for next-nearest neighbor interactions, applying recently derived uniform estimates of correlations.
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    Local Well-Posedness of Strong Solutions to the Three-Dimensional Compressible Primitive Equations
    (Berlin ; Heidelberg : Springer, 2021) Liu, Xin; Titi, Edriss S.
    This work is devoted to establishing the local-in-time well-posedness of strong solutions to the three-dimensional compressible primitive equations of atmospheric dynamics. It is shown that strong solutions exist, are unique, and depend continuously on the initial data, for a short time in two cases: with gravity but without vacuum, and with vacuum but without gravity. © 2021, The Author(s).
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    Revealing all states of dewetting of a thin gold layer on a silicon surface by nanosecond laser conditioning
    (Amsterdam : Elsevier, 2021) Ernst, Owen C.; Uebel, David; Kayser, Stefan; Lange, Felix; Teubner, Thomas; Boeck, Torsten
    Dewetting is a ubiquitous phenomenon which can be applied to the laser synthesis of nanoparticles. A classical spinodal dewetting process takes place in four successive states, which differ from each other in their morphology. In this study all states are revealed by interaction of pulsed nanosecond UV laser light with thin gold layers with thicknesses between 1 nm and 10 nm on (100) silicon wafers. The specific morphologies of the dewetting states are discussed with particular emphasis on the state boundaries. The main parameter determining which state is formed is not the duration for which the gold remains liquid, but rather the input energy provided by the laser. This shows that each state transition has a separate measurable activation energy. The temperature during the nanosecond pulses and the duration during which the gold remains liquid was determined by simulation using the COMSOL Multiphysics® software package. Using these calculations, an accurate local temperature profile and its development over time was simulated. An analytical study of the morphologies and formed structures was performed using Minkowski measures. With aid of this tool, the laser induced structures were compared with thermally annealed samples, with perfectly ordered structures and with perfectly random structures. The results show that both, structures of the laser induced and the annealed samples, strongly resemble the perfectly ordered structures. This reveals a close relationship between these structures and suggests that the phenomenon under investigation is indeed a spinodal dewetting generated by an internal material wave function. The purposeful generation of these structures and the elucidation of the underlying mechanism of dewetting by short pulse lasers may assist the realisation of various technical elements such as nanowires in science and industry. © 2020
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    Experimental proof of Joule heating-induced switched-back regions in OLEDs
    (London : Nature Publishing Group, 2020) Kirch, Anton; Fische, Axel; Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Reineke, Sebastian
    Organic light-emitting diodes (OLEDs) have become a major pixel technology in the display sector, with products spanning the entire range of current panel sizes. The ability to freely scale the active area to large and random surfaces paired with flexible substrates provides additional application scenarios for OLEDs in the general lighting, automotive, and signage sectors. These applications require higher brightness and, thus, current density operation compared to the specifications needed for general displays. As extended transparent electrodes pose a significant ohmic resistance, OLEDs suffering from Joule self-heating exhibit spatial inhomogeneities in electrical potential, current density, and hence luminance. In this article, we provide experimental proof of the theoretical prediction that OLEDs will display regions of decreasing luminance with increasing driving current. With a two-dimensional OLED model, we can conclude that these regions are switched back locally in voltage as well as current due to insufficient lateral thermal coupling. Experimentally, we demonstrate this effect in lab-scale devices and derive that it becomes more severe with increasing pixel size, which implies its significance for large-area, high-brightness use cases of OLEDs. Equally, these non-linear switching effects cannot be ignored with respect to the long-term operation and stability of OLEDs; in particular, they might be important for the understanding of sudden-death scenarios. © 2020, The Author(s).
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    Nonlinear dynamical properties of frequency swept fiber-based semiconductor lasers
    (Bristol : IOP Publishing, 2021) Slepneva, Svetlana; Pimenov, Alexander
    We investigate dynamics of semiconductor lasers with fiber-based unidirectional ring cavity that can be used as frequency swept sources. We identify key factors behind the reach dynamical behavior of such lasers using state-of-the-art experimental and analytical methods. Experimentally, we study the laser in static, quasi-static and synchronization regimes. We apply experimental methods such as optical heterodyne or electric field reconstruction in order to characterize these regimes or study the mechanisms of transition between them. Using a delay differential equation model, we demonstrate that the presence of chromatic dispersion can lead to destabilization of the laser modes through modulational instability, which results in undesirable chaotic emission. We characterize the instability threshold both theoretically and experimentally, and demonstrate deterioration of the Fourier domain mode locking regime near the threshold.
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    Exponential Moments for Planar Tessellations
    (New York, NY [u.a.] : Springer Science + Business Media B.V., 2020) Jahnel, Benedikt; Tóbiás, András
    In this paper we show existence of all exponential moments for the total edge length in a unit disk for a family of planar tessellations based on stationary point processes. Apart from classical tessellations such as the Poisson–Voronoi, Poisson–Delaunay and Poisson line tessellation, we also treat the Johnson–Mehl tessellation, Manhattan grids, nested versions and Palm versions. As part of our proofs, for some planar tessellations, we also derive existence of exponential moments for the number of cells and the number of edges intersecting the unit disk.
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    Dynamical Phase Transitions for Flows on Finite Graphs
    (New York, NY [u.a.] : Springer Science + Business Media B.V., 2020) Gabrielli, Davide; Renger, D.R. Michiel
    We study the time-averaged flow in a model of particles that randomly hop on a finite directed graph. In the limit as the number of particles and the time window go to infinity but the graph remains finite, the large-deviation rate functional of the average flow is given by a variational formulation involving paths of the density and flow. We give sufficient conditions under which the large deviations of a given time averaged flow is determined by paths that are constant in time. We then consider a class of models on a discrete ring for which it is possible to show that a better strategy is obtained producing a time-dependent path. This phenomenon, called a dynamical phase transition, is known to occur for some particle systems in the hydrodynamic scaling limit, which is thus extended to the setting of a finite graph.
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    Modeling of Chemical Reaction Systems with Detailed Balance Using Gradient Structures
    (New York, NY [u.a.] : Springer Science + Business Media B.V., 2020) Maas, Jan; Mielke, Alexander
    We consider various modeling levels for spatially homogeneous chemical reaction systems, namely the chemical master equation, the chemical Langevin dynamics, and the reaction-rate equation. Throughout we restrict our study to the case where the microscopic system satisfies the detailed-balance condition. The latter allows us to enrich the systems with a gradient structure, i.e. the evolution is given by a gradient-flow equation. We present the arising links between the associated gradient structures that are driven by the relative entropy of the detailed-balance steady state. The limit of large volumes is studied in the sense of evolutionary Γ-convergence of gradient flows. Moreover, we use the gradient structures to derive hybrid models for coupling different modeling levels.
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    Spatially modulated broad-area lasers for narrow lateral far-field divergence
    (Washington, DC : Soc., 2021) Zeghuzi, Anissa; Koester, Jan-Philipp; Radziunas, Mindaugas; Christopher, Heike; Wenzel, Hans; Knigge, Andrea
    A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3° full width at half maximum (ΘFWHM=0.3∘) where a 0.4°-wide main lobe contains 40% of the emitted optical output power (Θ40%=0.4∘). While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central 1∘ angular range, the measured far-field intensity outside of the obtained central peak remains high.
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    Multiscale simulations of the electronic structure of III-nitride quantum wells with varied indium content: Connecting atomistic and continuum-based models
    (Melville, NY : American Inst. of Physics, 2021) Chaudhuri, D.; O’Donovan, M.; Streckenbach, T.; Marquardt, O.; Farrell, P.; Patra, S.K.; Koprucki, T.; Schulz, S.
    Carrier localization effects in III-N heterostructures are often studied in the frame of modified continuum-based models utilizing a single-band effective mass approximation. However, there exists no comparison between the results of a modified continuum model and atomistic calculations on the same underlying disordered energy landscape. We present a theoretical framework that establishes a connection between atomistic tight-binding theory and continuum-based electronic structure models, here a single-band effective mass approximation, and provide such a comparison for the electronic structure of (In,Ga)N quantum wells. In our approach, in principle, the effective masses are the only adjustable parameters since the confinement energy landscape is directly obtained from tight-binding theory. We find that the electronic structure calculated within effective mass approximation and the tight-binding model differ noticeably. However, at least in terms of energy eigenvalues, an improved agreement between the two methods can be achieved by adjusting the band offsets in the continuum model, enabling, therefore, a recipe for constructing a modified continuum model that gives a reasonable approximation of the tight-binding energies. Carrier localization characteristics for energetically low lying, strongly localized states differ, however, significantly from those obtained using the tight-binding model. For energetically higher lying, more delocalized states, good agreement may be achieved. Therefore, the atomistically motivated continuum-based single-band effective mass model established provides a good, computationally efficient alternative to fully atomistic investigations, at least at when targeting questions related to higher temperatures and carrier densities in (In,Ga)N systems.