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- ItemStrain Engineered Electrically Pumped SiGeSn Microring Lasers on Si(Washington, DC : ACS, 2022) Marzban, Bahareh; Seidel, Lukas; Liu, Teren; Wu, Kui; Kiyek, Vivien; Zoellner, Marvin Hartwig; Ikonic, Zoran; Schulze, Joerg; Grützmacher, Detlev; Capellini, Giovanni; Oehme, Michael; Witzens, Jeremy; Buca, DanSiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T0. Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.
- ItemSubnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge /(Si, Ge) Quantum Cascade Structures(College Park, Md. [u.a.] : American Physical Society, 2023) Talamas Simola, Enrico; Montanari, Michele; Corley-Wiciak, Cedric; Di Gaspare, Luciana; Persichetti, Luca; Zöllner, Marvin H.; Schubert, Markus A.; Venanzi, Tommaso; Trouche, Marina Cagnon; Ortolani, Michele; Mattioli, Francesco; Sfuncia, Gianfranco; Nicotra, Giuseppe; Capellini, Giovanni; Virgilio, Michele; De Seta, MonicaThe fabrication of complex low-dimensional quantum devices requires the control of the heteroepitaxial growth at the subnanometer scale. This is particularly challenging when the total thickness of stacked layers of device-active material becomes extremely large and exceeds the multi-μm limit, as in the case of quantum cascade structures. Here, we use the ultrahigh-vacuum chemical vapor deposition technique for the growth of multi-μm-thick stacks of high Ge content strain-balanced Ge/SiGe tunneling heterostructures on Si substrates, designed to serve as the active material in a THz quantum cascade laser. By combining thorough structural investigation with THz spectroscopy absorption experiments and numerical simulations we show that the optimized deposition process can produce state-of-the-art threading dislocation density, ultrasharp interfaces, control of dopant atom position at the nanoscale, and reproducibility within 1% of the layer thickness and composition within the whole multilayer. We show that by using ultrahigh-vacuum chemical vapor deposition one achieves simultaneously a control of the epitaxy down to the sub-nm scale typical of the molecular beam epitaxy, and the high growth rate and technological relevance of chemical vapor deposition. Thus, this technique is a key enabler for the deposition of integrated THz devices and other complex quantum structures based on the Ge/SiGe material system.
- ItemHeteroepitaxy of group IV materials for future device application(Bristol : IOP Publ., 2023) Yamamoto, Yuji; Wen, Wei-Chen; Tillack, BerndHeteroepitxy of group IV materials (Si, SiGe, and Ge) has great potential for boosting Si-based novel device performance because of the possibility for strain, band gap/Fermi-level engineering, and applying emerging artificial materials such as a superlattice (SL) and nanodots. In order to control group IV heteroepitaxy processes, strain, interface, and surface energies are very essential parameters. They affect dislocation formation, interface steepness, reflow of deposited layers, and also surface reaction itself during the growth. Therefore, process control and crystallinity management of SiGe heteroepitaxy are difficult especially in the case of high Ge concentrations. In this paper, we review our results of abrupt SiGe/Si interface fabrication by introducing C-delta layers and the influence of strain on the surface reaction of SiGe. Three-dimensional self-ordered SiGe and Ge nanodot fabrication by proactively using strain and surface energies by depositing SiGe/Si and Ge/SiGe SL are also reviewed.
- ItemVertical alignment control of self-ordered multilayered Ge nanodots on SiGe(Bristol : IOP Publ., 2023) Wen, Wei-Chen; Schubert, Markus Andreas; Tillack, Bernd; Yamamoto, YujiSelf-ordered multilayered Ge nanodots with SiGe spacers on a Si0.4Ge0.6 virtual substrate are fabricated using reduced-pressure chemical vapor deposition, and the mechanism of vertical ordering is investigated. The process conditions of Ge and SiGe layer deposition are H2-GeH4 at 550 °C and H2-SiH4-GeH4 at 500 °C-550 °C, respectively. By depositing the SiGe at 550 °C or increasing Ge content, the SiGe surface becomes smooth, resulting in vertically aligned Ge nanodots to reduce strain energy. Ge nanodots prefer to grow on the nanodot where the SiGe is relatively tensile strained due to the buried Ge nanodot underneath. By depositing at 500 °C and lowering Ge content, checkerboard-like surface forms, and the following Ge nanodots grow at staggered positions to reduce surface energy. The Ge nanodots are laterally aligned along the elastically soft 〈100〉 direction without pre-structuring resulting from the strain distribution.
- ItemRaman spectroscopy in layered hybrid organic-inorganic metal halide perovskites(Bristol : IOP Publishing, 2022) Spirito, Davide; Asensio, Yaiza; Hueso, Luis E.; Martín-García, BeatrizThe continuous progress in the synthesis and characterization of materials in the vast family of hybrid organic-inorganic metal halide perovskites (HOIPs) has been pushed by their exceptional properties mainly in optoelectronic applications. These works highlight the peculiar role of lattice vibrations, which strongly interact with electrons, resulting in coupled states affecting the optical properties. Among these materials, layered (2D) HOIPs have emerged as a promising material platform to address some issues of their three-dimensional counterparts, such as ambient stability and ion migration. Layered HOIPs consist of inorganic layers made of metal halide octahedra separated by layers composed of organic cations. They have attracted much interest not only for applications, but also for their rich phenomenology due to their crystal structure tunability. Here, we give an overview of the main experimental findings achieved via Raman spectroscopy in several configurations and set-ups, and how they contribute to shedding light on the complex structural nature of these fascinating materials. We focus on how the phonon spectrum comes from the interplay of several factors. First, the inorganic and organic parts, whose motions are coupled, contribute with their typical modes which are very different in energy. Nonetheless, the interaction between them is relevant, as it results in low-symmetry crystal structures. Then, the role of external stimuli, such as temperature and pressure, which induce phase transitions affecting the spectrum through change in symmetry of the lattice, octahedral tilting and arrangement of the molecules. Finally, the relevant role of the coupling between the charge carriers and optical phonons is highlighted.
- ItemModulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers(Basel : MDPI, 2022) Kalishettyhalli Mahadevaiah, Mamathamba; Perez, Eduardo; Lisker, Marco; Schubert, Markus Andreas; Perez-Bosch Quesada, Emilio; Wenger, Christian; Mai, AndreasThe resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2 O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.
- ItemQuantitative protein sensing with germanium THz-antennas manufactured using CMOS processes(Washington, DC : Soc., 2022) Hardt, Elena; Chavarin, Carlos Alvarado; Gruessing, Soenke; Flesch, Julia; Skibitzki, Oliver; Spirito, Davide; Vita, Gian Marco; Simone, Giovanna De; Masi, Alessandra di; You, Changjiang; Witzigmann, Bernd; Piehler, Jacob; Capellini, GiovanniThe development of a CMOS manufactured THz sensing platform could enable the integration of state-of-the-art sensing principles with the mixed signal electronics ecosystem in small footprint, low-cost devices. To this aim, in this work we demonstrate a label-free protein sensing platform using highly doped germanium plasmonic antennas realized on Si and SOI substrates and operating in the THz range of the electromagnetic spectrum. The antenna response to different concentrations of BSA shows in both cases a linear response with saturation above 20 mg/mL. Ge antennas on SOI substrates feature a two-fold sensitivity as compared to conventional Si substrates, reaching a value of 6 GHz/(mg/mL), which is four-fold what reported using metal-based metamaterials. We believe that this result could pave the way to a low-cost lab-on-a-chip biosensing platform.
- ItemFrom Lab-on-chip to Lab-in-App: Challenges towards silicon photonic biosensors product developments(Amsterdam : Elsevier, 2022) Mai, Andreas; Mai, Christian; Steglich, PatrickThis work presents and evaluates different approaches of integrated optical sensors based on photonic integrated circuit (PIC) technologies for refractive index sensing. Bottlenecks in the fabrication flow towards an applicable system are discussed that hinder a cost-effective mass-production for disposable sensor chips. As sensor device, a waveguide coupled micro-ring based approach is chosen which is manufactured in an 8” wafer level process. We will show that the co-integration with a reproducible, scalable and low-cost microfluidic interface is the main challenge which needs to be overcome for future application of silicon technology based PIC sensor chips.