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Analysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films

2020, Shipulin, I., Richter, S., Thomas, A.A., Nielsch, K., Hühne, R., Martovitsky, V.

We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.

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Proximity array device: a novel photon detector working in long wavelengths

2020, Rezvani, S. Javad, Di Gioacchino, Daniele, Gatti, Claudio, Ligi, Carlo, Guidi, Mariangela Cestelli, Cibella, Sara, Fretto, Matteo, Poccia, Nicola, Lupi, Stefano, Marcelli, Augusto

We present here an innovative photon detector based on the proximity junction array device (PAD) working at long wavelengths. We show that the vortex dynamics in PAD undergoes a transition from a Mott insulator to a vortex metal state by application of an external magnetic field. The PAD also evidences a Josephson I-V characteristic with the external field dependent tunneling current. At high applied currents, we observe a dissipative regime in which the vortex dynamics is dominated by the quasi-particle contribution from the normal metal. The PAD has a relatively high photo-response even at frequencies below the expected characteristic frequency while, its superconducting properties such as the order parameter and the Josephson characteristic frequency can be modulated via external fields to widen the detection band. This device represents a promising and reliable candidate for new high-sensitivity long-wavelength detectors. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.

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High temperature behavior of rual thin films on piezoelectric CTGS and LGS substrates

2020, Seifert, M.

This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca3TaGa3Si2O14 (CTGS) and La3Ga5SiO14 (LGS) substrates. RuAl thin films with AlN or SiO2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In somefilms, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO2 barrier layer and up to 800 °C in air using a SiO2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.

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Disturbing-free determination of yeast concentration in DI water and in glucose using impedance biochips

2020, Kiani, M., Du, N., Vogel, M., Raff, J., Hübner, U., Skorupa, I., Bürger, D., Schulz, S.E., Schmidt, O.G., Blaschke, D., Schmidt, H.

Deionized water and glucose without yeast and with yeast (Saccharomyces cerevisiae) of optical density OD600 that ranges from 4 to 16 has been put in the ring electrode region of six different types of impedance biochips and impedance has been measured in dependence on the added volume (20, 21, 22, 23, 24, 25 µL). The measured impedance of two out of the six types of biochips is strongly sensitive to the addition of both liquid without yeast and liquid with yeast and modelled impedance reveals a linear relationship between the impedance model parameters and yeast concentration. The presented biochips allow for continuous impedance measurements without interrupting the cultivation of the yeast. A multiparameter fit of the impedance model parameters allows for determining the concentration of yeast (cy) in the range from cy = 3.3 × 107 to cy = 17 × 107 cells/mL. This work shows that independent on the liquid, i.e., DI water or glucose, the impedance model parameters of the two most sensitive types of biochips with liquid without yeast and with liquid with yeast are clearly distinguishable for the two most sensitive types of biochips.

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Phase formation and high-temperature stability of very thin co-sputtered Ti-Al and multilayered Ti/Al films on thermally oxidized si substrates

2020, Seifert, M., Lattner, E., Menzel, S.B., Oswald, S., Gemming, T.

Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO2 layer, which was used as an oxidation protection against the ambient atmosphere. The films were annealed at up to 800 °C in high vacuum for 10 h, and the phase formation as well as the film architecture was analyzed by X-ray diffraction, cross section, and transmission electron microscopy, as well as Auger electron and X-ray photoelectron spectroscopy. The results reveal that the co-sputtered films remained amorphous after annealing at 600 °C independent on the presence of the SiO2 cover layer. In contrast to this, the γ-TiAl phase was formed in the multilayer films at this temperature. After annealing at 800 °C, all films were degraded completely despite the presence of the cover layer. In addition, a strong chemical reaction between the Ti and SiO2 of the cover layer and the substrate took place, resulting in the formation of Ti silicide. In the multilayer samples, this reaction already started at 600 °C.

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Fabrication of metastable crystalline nanocomposites by flash annealing of Cu47.5Zr47.5Al5 metallic glass using joule heating

2020, Okulov, I., Soldatov, I., Kaban, I., Sarac, B., Spieckermann, F., Eckert, J.

Flash Joule-heating was applied to the Cu47.5Zr47.5Al5 metallic glass for designing fully crystalline metastable nanocomposites consisting of the metastable B2 CuZr and low-temperature equilibrium Cu10Zr7 phases. The onset of crystallization was in situ controlled by monitoring resistivity changes in the samples. The effect of heating rate and annealing time on the volume fraction of the crystalline phases and mechanical properties of the nanocomposites was studied in detail. Particularly, an increase of the heating rate and a decrease of the annealing time lead to a lower number of equilibrium Cu10Zr7 precipitates and an increase of tensile ductility. Tailoring of these non-equilibrium microstructures and mechanical properties may not be possible unless one starts with a fully glassy material that opens new perspectives for designing metastable nanomaterials with unique physical properties.