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    Suppression of nematicity by tensile strain in multilayer FeSe/SrTiO3 films
    (College Park, MD : APS, 2023) Lou, Rui; Suvorov, Oleksandr; Grafe, Hans-Joachim; Kuibarov, Andrii; Krivenkov, Maxim; Rader, Oliver; Büchner, Bernd; Borisenko, Sergey; Fedorov, Alexander
    The nematicity in multilayer FeSe/SrTiO3 films has been previously suggested to be enhanced with decreasing film thickness. Motivated by this, there have been many discussions about the competing relation between nematicity and superconductivity. However, the criterion for determining the nematicity strength in FeSe remains highly debated. The understanding of nematicity as well as its relation to superconductivity in FeSe films is therefore still controversial. Here, we fabricate multilayer FeSe/SrTiO3 films using molecular beam epitaxy and study the nematic properties by combining angle-resolved photoemission spectroscopy, Se77 nuclear magnetic resonance, and scanning tunneling microscopy experiments. We unambiguously demonstrate that, near the interface, the nematic order is suppressed by the SrTiO3-induced tensile strain; in the bulk region further away from the interface, the strength of nematicity recovers to the bulk value. Our results not only solve the recent controversy about the nematicity in multilayer FeSe films, but also offer valuable insights into the relationship between nematicity and superconductivity.
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    Lifshitz transition in titanium carbide driven by a graphene overlayer
    (College Park, MD : APS, 2023) Krivenkov, M.; Marchenko, D.; Golias, E.; Sajedi, M.; Frolov, A.S.; Sánchez-Barriga, J.; Fedorov, A.; Yashina, L.V.; Rader, O.; Varykhalov, A.
    Two-dimensional (2D) Dirac materials are electronically and structurally very sensitive to proximity effects. We demonstrate, however, the opposite effect: that the deposition of a monolayer 2D material could exercise a substantial influence on the substrate electronic structure. Here we investigate TiC(111) and show that a graphene overlayer produces a proximity effect, changing the Fermi surface topology of the TiC from six electron pockets to one hole pocket on the depth of several atomic layers inside the substrate. In addition, the graphene electronic structure undergoes an extreme modification as well. While the Dirac cone remains gapless, it experiences an energy shift of 1.0 eV beyond what was recently achieved for the Lifshitz transition of overdoped graphene. Due to this shift, the antibonding π∗ band at the M¯ point becomes occupied and observable by photoemission.