Search Results
Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2
Observations of the anomalous Hall effect in RuO2 and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe, the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO2 is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis toward the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO2 thin-film samples, whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field Hc ≃ 55 T that was inaccessible in earlier studies but is consistent with the expected Néel-vector reorientation field.
Using internal strain and mass to modulate Dy⋯Dy coupling and relaxation of magnetization in heterobimetallic metallofullerenes DyM2N@C80 and Dy2MN@C80 (M = Sc, Y, La, Lu)
Endohedral clusters inside metallofullerenes experience considerable inner strain when the size of the hosting cage is comparably small. This strain can be tuned in mixed-metal metallofullerenes by combining metals of different sizes. Here we demonstrate that the internal strain and mass can be used as variables to control Dy⋯Dy coupling and relaxation of magnetization in Dy-metallofullerenes. Mixed-metal nitride clusterfullerenes DyxY3−xN@Ih-C80 (x = 0-3) and Dy2LaN@Ih-C80 combining Dy with diamagnetic rare-earth elements, Y and La, were synthesized and characterized by single-crystal X-ray diffraction, SQUID magnetometry, ab initio calculations, and spectroscopic techniques. DyxY3−xN clusters showed a planar structure, but the slightly larger size of Dy3+ in comparison with that of Y3+ resulted in increased elongation of the nitrogen thermal ellipsoid, showing enhancement of the out-of-plane vibrational amplitude. When Dy was combined with larger La, the Dy2LaN cluster appeared strongly pyramidal with the distance between two nitrogen sites of 1.15(1) Å, whereas DyLa2N@C80 could not be obtained in a separable yield. Magnetic studies revealed that the relaxation of magnetization and blocking temperature of magnetization in the DyM2N@C80 series (M = Sc, Y, Lu) correlated with the mass of M, with DySc2N@C80 showing the fastest and DyLu2N@C80 the slowest relaxation. Ab initio calculations predicted very similar g-tensors for Dy3+ ground state pseudospin in all studied DyM2N@C80 molecules, suggesting that the variation in relaxation is caused by different vibrational spectra of these compounds. In the Dy2MN@C80 series (M = Sc, Y, La, Lu), the magnetic and hysteretic behavior was found to correlate with Dy⋯Dy coupling, which in turn appears to depend on the size of M3+. Across the Dy2MN@C80 series, the energy difference between ferromagnetic and antiferromagnetic states changes from 5.6 cm−1 in Dy2ScN@C80 to 3.0 cm−1 in Dy2LuN@C80, 1.0 cm−1 in Dy2YN@C80, and −0.8 cm−1 in Dy2LaN@C80. The coupling of Dy ions suppresses the zero-field quantum tunnelling of magnetization but opens new relaxation channels, making the relaxation rate dependent on the coupling strengths. DyY2N@C80 and Dy2YN@C80 were found to be non-luminescent, while the luminescence reported for DyY2N@C80 was caused by traces of Y3N@C80 and Y2ScN@C80
Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
The integration of alternative semiconductor layers on the Si material platform via oxide heterostructures is of interest to increase the performance and/or functionality of future Si-based integrated circuits. The single crystalline quality of epitaxial (epi) semiconductor-insulator-Si heterostructures is however limited by too high defect densities, mainly due to a lack of knowledge about the fundamental physics of the heteroepitaxy mechanisms at work. To shed light on the physics of stacking twin formation as one of the major defect mechanisms in (111)-oriented fcc-related heterostructures on Si(111), we report a detailed experimental and theoretical study on the structure and defect properties of epi-Si(111)/Y2O 3/Pr2O3/Si(111) heterostructures. Synchrotron radiation-grazing incidence x-ray diffraction (SR-GIXRD) proves that the engineered Y2O3/Pr2O3 buffer dielectric heterostructure on Si(111) allows control of the stacking sequence of the overgrowing single crystalline epi-Si(111) layers. The epitaxy relationship of the epi-Si(111)/insulator/Si(111) heterostructure is characterized by a type A/B/A stacking configuration. Theoretical ab initio calculations show that this stacking sequence control of the heterostructure is mainly achieved by electrostatic interaction effects across the ionic oxide/covalent Si interface (IF). Transmission electron microscopy (TEM) studies detect only a small population of misaligned type B epi-Si(111) stacking twins whose location is limited to the oxide/epiSi IF region. Engineering the oxide/semiconductor IF physics by using tailored oxide systems opens thus a promising approach to grow heterostructures with well-controlled properties. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Spin Hall effect emerging from a noncollinear magnetic lattice without spin-orbit coupling
The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by spin-orbit coupling. Here, we identify an alternative mechanism to realize the intrinsic SHE through a noncollinear magnetic structure that breaks the spin rotation symmetry. No spin-orbit coupling is needed even when the scalar spin chirality vanishes, different from the case of the topological Hall effect and topological SHE reported previously. In known noncollinear antiferromagnetic compounds Mn3X (X = Ga, Ge, and Sn), for example, we indeed obtain large spin Hall conductivities based on ab initio calculations.
The electronic structure of ϵ-Ga2O3
The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.