Search Results
240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology
This article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.
A Scalable Four-Channel Frequency-Division Multiplexing MIMO Radar Utilizing Single-Sideband Delta-Sigma Modulation
A scalable four-channel multiple-input multiple-output (MIMO) radar that features a modular system architecture and a novel frequency-division multiplexing approach is presented in this article. It includes a single 30-GHz voltage-controlled oscillator (VCO) for the local oscillator signal generation, four cascaded 120-GHz transceivers with a frequency quadrupler, and on-board differential series-fed patch antennas. The utilized uniform antenna configuration results in 16 virtual array elements and enables an angular resolution of 6.2°. The vector modulators in the transmit (TX) paths allow the application of complex bit streams of second-order delta-sigma modulators easily generated on a field-programmable gate array (FPGA) to implement single-sideband (SSB) modulation on the TX signals resulting in orthogonal waveforms for the MIMO operation. Only one phase-locked loop and no digital-To-Analog converter is required. The waveform diversity also allows the simultaneous transmission of the TX signals to reduce the measurement time. The application of the SSB modulation on the frequency-modulated continuous-wave MIMO radar requires only half of the intermediate frequency bandwidth compared with the double-sideband modulation. The issue of the phase and amplitude mismatches at the virtual array elements due to the scalable radar architecture is addressed and a calibration solution is introduced in this article. Radar measurements using different numbers of virtual array elements were compared and the digital-beamforming method was applied to the results to create 2-D images. © 1963-2012 IEEE.
Penalties From 2D Grating Coupler Induced Polarization Crosstalk in Silicon Photonic Coherent Transceivers
Silicon photonic two-dimensional grating couplers for C- and O-band dual-polarization coherent transceivers are analyzed with respect to their polarization splitting/combining performance. Due to scattered light in the grating's plane, a linear cross-polarization results. The latter is responsible for a limited polarization split ratio and a polarizations' non-orthogonality. The impact of these two quantities is evaluated by system-level simulations with regard to OSNR penalties in coherent systems. For both C- and O-band, a design modification for reduced penalties is proposed.
Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.
CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release
Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU. © 1989-2012 IEEE.
A QPSK 110-Gb/s Polarization-Diversity MIMO Wireless Link with a 220-255 GHz Tunable LO in a SiGe HBT Technology
In this article, a polarization-diversity technique multiple-input multiple-output (MIMO) is demonstrated to double the spectral efficiency of a line-of-sight quadrature phase-shift keying (QPSK) wireless link at 220-255 GHz with a pair of highly integrated single-chip transmitter (TX) and receiver (RX) front-end modules in 0.13-µ {m SiGe HBT technology ( fTmax=350 /550 GHz) exploiting only a low-cost wire-bonded chip-on-board packaging solution for high-speed baseband (BB) signals. Both TX and RX chips accommodate two independent fundamentally operated direct-conversion in-phase and quadrature (IQ) paths with separately tunable on-chip multiplier-based ( × 16 ) local oscillator (LO) generation paths driven from a single external highly stable 13.75-16-GHz frequency synthesizer. On the RX side, a mixer-first architecture is implemented to improve the symmetry between upper and lower sidebands (USB and LSB) at the cost of an increased noise figure (NF), whereas, on the TX chip, each upconversion mixer is followed by a gain-bandwidth (BW)-limited four-stage power amplifier (PA) to support the link budget at a meter distance. Next, two independent IQ data streams from the upconversion/downconversion paths on each chip are directed to a common lens-coupled broadband on-chip slot antenna system. This way, two orthogonal circular polarizations [left-handed circular polarization (LHCP) and right-handed circular polarization (RHCP)] can be transmitted with sufficient isolation for link operation without the need for a high-speed depolarizer in the BB for any relative orientation between TX and RX modules. The antenna combined with a 9-mm diameter Si-lens provides a directivity of 23.5-27 dBi at 210-270 GHz for each of the modules. This, along with a peak radiated power of 7.5 dBm/ch from the TX module, and the cascaded conversion gain (CG)/single sideband (SSB) NF of 18/18 dB/ch for the RX module followed by a broadband amplifier (PSPL5882) from Tektronix allowed successful transmission of two independent QPSK data streams with an aggregate speed of 110 and 80 Gb/s over 1 and 2 m, respectively, at 230 GHz with a board-level limited channel BB bandwidth (BW) of 13.5 GHz. © 1963-2012 IEEE.
On-Chip Dispersion Measurement of the Quadratic Electro-Optic Effect in Nonlinear Optical Polymers Using a Photonic Integrated Circuit Technology
A novel method to determine the dispersion of the quadratic electro-optic effect in nonlinear optical materials by using a silicon-on-insulator microring resonator is presented. The microring consists of a silicon slot waveguide enabling large dc electric field strength at low applied voltages. The dispersion of third-order hyperpolarizability of a linear conjugated dye is approximated by using a two-level model for the off-resonant spectral region. As an example, the dispersion of the resonance wavelength of the resonator filled with a dye doped polymer was measured in dependence of the applied dc voltage. The polymer was poly (methylmethacrylate) doped with 5 wt% disperse red 1 (DR1), and the measurements have been carried out at the telecommunication wavelength band around 1550 nm (optical C-band). The described measurements represent a new technique to determine the dispersion of the third-order susceptibility and molecular hyperpolarizability of the material filled into the slot of the ring-resonator. © 2019 IEEE.
Modeling of edge-emitting lasers based on tensile strained germanium microstrips
In this paper, we present a thorough modeling of an edge-emitting laser based on strained germanium (Ge) microstrips. The full-band structure of the tensile strained Ge layer enters the calculation of optical properties. Material gain for strained Ge is used in the 2D simulation of the carrier transport and of the optical field within a cross section of the microstrips orthogonal to the optical cavity. We study optoelectronic properties of the device for two different designs. The simulation results are very promising as they show feasible ways toward Ge emitter devices with lower threshold currents and higher efficiency as published insofar.