Search Results
Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si
SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T0. Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.
A Flashback on Control Logic Injection Attacks against Programmable Logic Controllers
Programmable logic controllers (PLCs) make up a substantial part of critical infrastructures (CIs) and industrial control systems (ICSs). They are programmed with a control logic that defines how to drive and operate critical processes such as nuclear power plants, petrochemical factories, water treatment systems, and other facilities. Unfortunately, these devices are not fully secure and are prone to malicious threats, especially those exploiting vulnerabilities in the control logic of PLCs. Such threats are known as control logic injection attacks. They mainly aim at sabotaging physical processes controlled by exposed PLCs, causing catastrophic damage to target systems as shown by Stuxnet. Looking back over the last decade, many research endeavors exploring and discussing these threats have been published. In this article, we present a flashback on the recent works related to control logic injection attacks against PLCs. To this end, we provide the security research community with a new systematization based on the attacker techniques under three main attack scenarios. For each study presented in this work, we overview the attack strategies, tools, security goals, infected devices, and underlying vulnerabilities. Based on our analysis, we highlight the current security challenges in protecting PLCs from such severe attacks and suggest security recommendations for future research directions.
On the Complexity of Attacking Elliptic Curve Based Authentication Chips
In this paper we discuss the difficulties of mounting successful attacks against crypto implementations if essential information is missing. We start with a detailed description of our attack against our own design, to highlight which information is needed to increase the success of an attack, i.e. we use it as a blueprint to the following attack against commercially available crypto chips. We would like to stress that our attack against our own design is very similar to what happens during certification e.g. according to the Common Criteria Standard as in those cases the manufacturer needs to provide detailed information. If attacking commercial designs without signing NDAs, we were forced to intensively search the Internet for information about the designs. We were able to reveal information on the processing sequence during the authentication process even as detailed as identifying the clock cycles in which the individual key bits are processed. But we could not reveal the private keys used by the attacked commercial authentication chips 100% correctly. Moreover, as we did not knew the used keys we could not evaluate the success of our attack. To summarize, the effort of such an attack is significantly higher than the one of attacking a well-known implementation.
Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region.
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device
A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six strain tensor components with a lateral resolution of approximately 50 nm. Two different spatial scales governing the strain field fluctuations in proximity of the qubits are observed at <100 nm and >1 μm, respectively. The short-ranged fluctuations have a typical bandwidth of 2 × 10-4 and can be quantitatively linked to the compressive stressing action of the metal electrodes defining the qubits. By finite element mechanical simulations, it is estimated that this strain fluctuation is increased up to 6 × 10-4 at cryogenic temperature. The longer-ranged fluctuations are of the 10-3 order and are associated with misfit dislocations in the plastically relaxed virtual substrate. From this, energy variations of the light and heavy-hole energy maxima of the order of several 100 μeV and 1 meV are calculated for electrodes and dislocations, respectively. These insights over material-related inhomogeneities may feed into further modeling for optimization and design of large-scale quantum processors manufactured using the mainstream Si-based microelectronics technology.
Dielectrophoresis: An Approach to Increase Sensitivity, Reduce Response Time and to Suppress Nonspecific Binding in Biosensors?
The performance of receptor-based biosensors is often limited by either diffusion of the analyte causing unreasonable long assay times or a lack of specificity limiting the sensitivity due to the noise of nonspecific binding. Alternating current (AC) electrokinetics and its effect on biosensing is an increasing field of research dedicated to address this issue and can improve mass transfer of the analyte by electrothermal effects, electroosmosis, or dielectrophoresis (DEP). Accordingly, several works have shown improved sensitivity and lowered assay times by order of magnitude thanks to the improved mass transfer with these techniques. To realize high sensitivity in real samples with realistic sample matrix avoiding nonspecific binding is critical and the improved mass transfer should ideally be specific to the target analyte. In this paper we cover recent approaches to combine biosensors with DEP, which is the AC kinetic approach with the highest selectivity. We conclude that while associated with many challenges, for several applications the approach could be beneficial, especially if more work is dedicated to minimizing nonspecific bindings, for which DEP offers interesting perspectives.
PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients
The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.
Nonlinear Optical Characterization of CsPbBr3 Nanocrystals as a Novel Material for the Integration into Electro-Optic Modulators
The present work is concerned with the investigation of the nonlinear optical response of green emissive CsPbBr3 nanocrystals, in the form of colloidal dispersions in toluene, synthesized via a room-temperature ligand-assisted supersaturation recrystallization (LASR) method. After carrying out a preliminary characterization via X-Ray Diffraction (XRD) and Absorption and Photoluminescence (PL) Spectroscopies, the optical nonlinearity of the as-obtained colloids is probed by means of a single-beam Z-scan setup. Results show that the material in question, within the sensitivity of the experimental apparatus, exhibits a nonlinear refractive index n2 that is the order of 10-15 cm2/W. Moreover, a three-photon absorption mechanism (3PA) is postulated, according to the fitting of the recorded Z-scan traces and the fundamental absorption threshold, which turns out to be off resonance with twice the energy of the laser radiation. A figure of merit is, then, calculated as an indicator of the quality of the CsPbBr3 nanocrystals as a candidate material for photonic devices, for instance, Kerr-like electro-optic modulators (EOMs).
Artificial intelligence in marketing: friend or foe of sustainable consumption?
[No abstract available]
Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10−7–10−3 mbar and 900–980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2–3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3–10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth.