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Start date: 2022 × Subject: Amorphous silicon ×

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    Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode
    (Basel : MDPI, 2018) Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann Wolfgang; Wenger, Christian
    Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μS was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.
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    Process flow to integrate nanostructures on silicon grass in surface micromachined systems
    (Bristol : IOP Publ., 2016) Mehner, H.; Müller, L.; Biermann, S.; Hänschke, F.; Hoffmann, M.
    The process flow to integrate metallic nanostructures in surface micromachining processes is presented. The nanostructures are generated by evaporation of microstructured silicon grass with metal. The process flow is based on the lift-off of a thin amorphous silicon layer deposited using a CVD process. All steps feature a low temperature load beneath 120 °C and high compatibility with many materials as only well-established chemicals are used. As a result metallic nanostructures usable for optical applications can be generated as part of multilayered microsystems fabricated in surface micromachining.