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- ItemAdvanced GeSn/SiGeSn Group IV Heterostructure Lasers(Weinheim : Wiley-VCH, 2018) von den Driesch, Nils; Stange, Daniela; Rainko, Denis; Povstugar, Ivan; Zaumseil, Peter; Capellini, Giovanni; Schröder, Thomas; Denneulin, Thibaud; Ikonic, Zoran; Hartmann, Jean-Michel; Sigg, Hans; Mantl, Siegfried; Grützmacher, Detlev; Buca, DanGrowth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers.
- ItemGate-controlled quantum dots and superconductivity in planar germanium([London] : Nature Publishing Group UK, 2018) Hendrickx, N.W.; Franke, D.P.; Sammak, A.; Kouwenhoven, M.; Sabbagh, D.; Yeoh, L.; Li, R.; Tagliaferri, M.L.V.; Virgilio, M.; Capellini, G.; Scappucci, G.; Veldhorst, M.Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we realise an approach that overcomes these issues altogether and integrate gate-defined quantum dots and superconductivity into germanium heterostructures. In our system, heavy holes with mobilities exceeding 500,000 cm2 (Vs)−1 are confined in shallow quantum wells that are directly contacted by annealed aluminium leads. We observe proximity-induced superconductivity in the quantum well and demonstrate electric gate-control of the supercurrent. Germanium therefore has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material for quantum information processing.
- ItemInfluence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene([London] : Macmillan Publishers Limited, part of Springer Nature, 2021) Lukose, R.; Lisker, M.; Akhtar, F.; Fraschke, M.; Grabolla, T.; Mai, A.; Lukosius, M.One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.
- ItemAuthor Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene([London] : Macmillan Publishers Limited, part of Springer Nature, 2021) Lukose, R.; Lisker, M.; Akhtar, F.; Fraschke, M.; Grabolla, T.; Mai, A.; Lukosius, M.The original version of this Article omitted an affiliation for M. Lisker. The correct affiliations for M. Lisker are listed below: IHP- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany Technical University of Applied Science Wildau, Hochschulring 1, 15745, Wildau, Germany The original Article and accompanying Supplementary Information file have been corrected.
- ItemEthical Artificial Intelligence in Chemical Research and Development: A Dual Advantage for Sustainability(Dordrecht : Springer Netherlands, 2021) Hermann, Erik; Hermann, Gunter; Tremblay, Jean-ChristopheArtificial intelligence can be a game changer to address the global challenge of humanity-threatening climate change by fostering sustainable development. Since chemical research and development lay the foundation for innovative products and solutions, this study presents a novel chemical research and development process backed with artificial intelligence and guiding ethical principles to account for both process- and outcome-related sustainability. Particularly in ethically salient contexts, ethical principles have to accompany research and development powered by artificial intelligence to promote social and environmental good and sustainability (beneficence) while preventing any harm (non-maleficence) for all stakeholders (i.e., companies, individuals, society at large) affected.