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End date: 2008 × Start date: 2008 × Has files: Yes × Type: Text × Subject: Flow interactions ×

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    Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
    (College Park, MD : Institute of Physics Publishing, 2008) Schroetter, T.; Zaumseil, P.; Seifarth, O.; Giussani, A.; Müssig, H.-J.; Storck, P.; Geiger, D.; Lichte, H.; Dabrowski, J.
    The integration of alternative semiconductor layers on the Si material platform via oxide heterostructures is of interest to increase the performance and/or functionality of future Si-based integrated circuits. The single crystalline quality of epitaxial (epi) semiconductor-insulator-Si heterostructures is however limited by too high defect densities, mainly due to a lack of knowledge about the fundamental physics of the heteroepitaxy mechanisms at work. To shed light on the physics of stacking twin formation as one of the major defect mechanisms in (111)-oriented fcc-related heterostructures on Si(111), we report a detailed experimental and theoretical study on the structure and defect properties of epi-Si(111)/Y2O 3/Pr2O3/Si(111) heterostructures. Synchrotron radiation-grazing incidence x-ray diffraction (SR-GIXRD) proves that the engineered Y2O3/Pr2O3 buffer dielectric heterostructure on Si(111) allows control of the stacking sequence of the overgrowing single crystalline epi-Si(111) layers. The epitaxy relationship of the epi-Si(111)/insulator/Si(111) heterostructure is characterized by a type A/B/A stacking configuration. Theoretical ab initio calculations show that this stacking sequence control of the heterostructure is mainly achieved by electrostatic interaction effects across the ionic oxide/covalent Si interface (IF). Transmission electron microscopy (TEM) studies detect only a small population of misaligned type B epi-Si(111) stacking twins whose location is limited to the oxide/epiSi IF region. Engineering the oxide/semiconductor IF physics by using tailored oxide systems opens thus a promising approach to grow heterostructures with well-controlled properties. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Attosecond electron thermalization in laser-induced nonsequential multiple ionization: Hard versus glancing collisions
    (College Park, MD : Institute of Physics Publishing, 2008) Liu, X.; De Morisson Faria, C.F.; Becker, W.
    A recollision-based largely classical statistical model of laser-induced nonsequential multiple (N-fold) ionization of atoms is further explored. Upon its return to the ionic core, the first-ionized electron interacts with the other N - 1 bound electrons either through a contact or a Coulomb interaction. The returning electron may leave either immediately after this interaction or join the other electrons to form a thermalized complex which leaves the ion after the delay Δt, which is the sum of a thermalization time and a possible additional dwell time. Good agreement with the available triple and quadruple ionization data in neon and argon is obtained with the contact scenario and delays of Δt = 0.17 T and 0.265 T, respectively, with T the laser period. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.