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End date: 2009 × Start date: 2000 × Has files: Yes × Type: Text × Publisher: College Park, MD : Institute of Physics Publishing × WGL Institute: IFWD ×

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    Triggered polarization-entangled photon pairs from a single quantum dot up to 30 K
    (College Park, MD : Institute of Physics Publishing, 2007) Hafenbrak, R.; Ulrich, S.M.; Michler, P.; Wang, L.; Rastelli, A.; Schmidt, O.G.
    The radiative biexciton-exciton decay in a semiconductor quantum dot (QD) has the potential of being a source of triggered polarization-entangled photon pairs. However, in most cases the anisotropy-induced exciton fine structure splitting destroys this entanglement. Here, we present measurements on improved QD structures, providing both significantly reduced inhomogeneous emission linewidths and near-zero fine structure splittings. A high-resolution detection technique is introduced which allows us to accurately determine the fine structure in the photoluminescence emission and therefore select appropriate QDs for quantum state tomography. We were able to verify the conditions of entangled or classically correlated photon pairs in full consistence with observed fine structure properties. Furthermore, we demonstrate reliable polarization-entanglement for elevated temperatures up to 30 K. The fidelity of the maximally entangled state decreases only a little from 72% at 4 K to 68% at 30 K. This is especially encouraging for future implementations in practical devices. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
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    Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules
    (College Park, MD : Institute of Physics Publishing, 2008) Wang, L.; Rastelli, A.; Kiravittaya, S.; Atkinson, P.; Ding, F.; Bof Bufon, C.C.; Hermannstädter, C.; Witzany, M.; Beirne, G.J.; Michler, P.; Schmidt, O.G.
    We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro- photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.