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- ItemAtomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations(Bristol : IOP Publishing, 2012) Murota, Junichi; Sakuraba, Masao; Tillack, BerndOne of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x=0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si1-xGex (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si1−xGex (100), segregation of P atoms is suppressed by using Si2H6 instead of SiH4 at a low temperature of 450 °C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si1−xGex/Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs.
- ItemRoom temperature direct band gap emission from Ge p-i-n heterojunction photodiodes(London : Hindawi, 2012) Kasper, E.; Oehme, M.; Arguirov, T.; Werner, J.; Kittler, M.; Schulze, J.Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems fromcarrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
- ItemMAC and baseband processors for RF-MIMO WLAN(London : BioMed Central, 2011) Stamenkovic, Zoran; Tittelbach-Helmrich, Klaus; Krstic, Milos; Ibanez, Jesus; Elvira, Victor; Santamaria, IgnacioThe article describes hardware solutions for the IEEE 802.11 medium access control (MAC) layer and IEEE 802.11a digital baseband in an RF-MIMO WLAN transceiver that performs the signal combining in the analogue domain. Architecture and implementation details of the MAC processor including a hardware accelerator and a 16-bit MAC-physical layer (PHY) interface are presented. The proposed hardware solution is tested and verified using a PHY link emulator. Architecture, design, implementation, and test of a reconfigurable digital baseband processor are described too. Description includes the baseband algorithms (the main blocks being MIMO channel estimation and Tx-Rx analogue beamforming), their FPGA-based implementation, baseband printed-circuit-board, and real-time tests.
- ItemSupport for a long lifetime and short end-to-end delays with TDMA protocols in sensor networks(London : Hindawi, 2012) Brzozowski, Marcin; Salomon, Hendrik; Langendoerfer, PeterThis work addresses a tough challenge of achieving two opposing goals: ensuring long lifetimes and supporting short end-to-end delays in sensor networks. Obviously, sensor nodes must wake up often to support short delays in multi-hop networks. As event occurs seldom in common applications, most wake-up are useless: nodes waste energy due to idle listening. We introduce a set of solutions, referred to as LETED (limiting end-to-end delays), which shorten the wake-up periods, reduce idle listening, and save energy. We exploit hardware features of available transceivers that allow early detection of idle wake-up periods. This feature is introduced on top of our approach to reduce idle listening stemming from clock drift owing to the estimation of run-time drift. To evaluate LETED and other MAC protocols that support short end-to-end delays we present an analytical model, which considers almost 30 hardware and software parameters. Our evaluation revealed that LETED reduces idle listening by 15x and more against similar solutions. Also, LETED outperforms other protocols and provides significant longer lifetimes. For example, nodes with LETED work 8x longer than those with a common TDMA and 2x-3x longer than with protocols based on preamble sampling, like B-MAC.
- ItemAdaptable security in wireless sensor networks by using reconfigurable ECC hardware coprocessors(London : Hindawi, 2010) Portilla, J.; Otero, A.; de la Torre, E.; Riesgo, T.; Stecklina, O.; Peter, S.; Langendörfer, P.Specific features of Wireless Sensor Networks (WSNs) like the open accessibility to nodes, or the easy observability of radio communications, lead to severe security challenges. The application of traditional security schemes on sensor nodes is limited due to the restricted computation capability, low-power availability, and the inherent low data rate. In order to avoid dependencies on a compromised level of security, a WSN node with a microcontroller and a Field Programmable Gate Array (FPGA) is used along this work to implement a state-of-the art solution based on ECC (Elliptic Curve Cryptography). In this paper it is described how the reconfiguration possibilities of the system can be used to adapt ECC parameters in order to increase or reduce the security level depending on the application scenario or the energy budget. Two setups have been created to compare the softwareand hardware-supported approaches. According to the results, the FPGA-based ECC implementation requires three orders of magnitude less energy, compared with a low power microcontroller implementation, even considering the power consumption overhead introduced by the hardware reconfiguration.
- ItemInvestigation of emitter homogeneity on laser doped emitters(Amsterdam [u.a.] : Elsevier, 2011) Germershausen, S.; Bartholomäus, L.; Seidel, U.; Hanisch, N.; Schieferdecker, A.; Küsters, K.H.; Kittler, M.; Ametowobla, M.; Einsele, F.; Dallmann, G.The selective emitter formation by laser doping is a well known process to increase the efficiency of silicon solar cells [1], [2]. For the characterization of laser doped emitters, SIMS (Secondary Ion Mass Spectroscopy) and ECV (Electrochemical Capacitance Voltage Measurement) techniques are used to analyze the emitter profile [3]. It is very difficult to get acceptable result by SIMS on a textured surface, so only ECV can be used. It has been shown, that a charge carrier depth profile can be measured on a homogeneous emitter only by ECV. The use of laser doping results in a non-homogeneous emitter. We have shown that the emitter depth is not just a function of the pulse power, but in addition of the surface structure of the wafer. The texture seems responsible for a strong variability in the doping profile. It has been shown, that the ECV measurement is not applicable to characterize the emitter depth on laser doped areas, because of the microscopic inhomogeneities in the emitter on the macroscopic measurement area. The real emitter profiles are to complex to be characterized by SIMS or ECV. We have shown that the variation in the emitter profile is resulting from the texture in the laser-doped regions.
- ItemRealFlex : Abschlussbericht (IHP)(Hannover : Technische Informationsbibliothek (TIB), 2011) Peter, Steffen[no abstract available]
- ItemEUREKA-Projekt 100GET (CELTIC CP4-001), Teilvorhaben: 100Gbit/s Netzwerktechnik für optische Ethernet-Transportnetze : Schlussbericht(Hannover : Technische Informationsbibliothek (TIB), 2011) Scheytt, Christoph[no abstract available]
- ItemVerbundprojekt: Neuartige Lichtquellen und Komponenten für Silizium-Photonik (SiliconLight), IHP-Teilvorhaben: MIS-Lichtemitter auf Basis von Versetzungsnetzwerken und Erweiterung einer BiCMOS-Technologie um photonische Elemente : Schlussbericht zum Vorhaben(Hannover : Technische Informationsbibliothek (TIB), 2011) Kittler, Martin; Arguirov, Tzanimir; Mchedlidze, Teimuraz; Oehme, Michael; Reiche, Manfred; Seifert, Winfried; Trushin, Maxim; Wenger, Christian; Zimmermann, Lars; Richter, Harald; Stolarek, David; Tian, Hui; Fraschke, Mirko[no abstract available]
- ItemHF-Modulator für Klasse-S-Verstärker - HMoS, Teilprojekt 2: Monolithische modulare Integration : Schlussbericht(Hannover : Technische Informationsbibliothek (TIB), 2010) Scheytt, J. Christoph; Ostrovskyy, Pylyp[no abstract available]