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End date: 2012 × Start date: 2010 × DDC: 620 × Has files: Yes ×

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Now showing 1 - 10 of 148
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    Pronounced ductility in CuZrAl ternary bulk metallic glass composites with optimized microstructure through melt adjustment
    (New York : American Institute of Physics, 2012) Liu, Zengqian; Li, Ran; Liu, Gang; Song, Kaikai; Pauly, Simon; Zhang, Tao; Eckert, Jürgen
    Microstructures and mechanical properties of as-cast Cu47.5Zr47.5Al5 bulk metallic glass composites are optimized by appropriate remelting treatment of master alloys. With increasing remelting time, the alloys exhibit homogenized size and distribution of in situ formed B2 CuZr crystals. Pronounced tensile ductility of ∼13.6% and work-hardening ability are obtained for the composite with optimized microstructure. The effect of remelting treatment is attributed to the suppressed heterogeneous nucleation and growth of the crystalline phase from undercooled liquid, which may originate from the dissolution of oxides and nitrides as well as from the micro-scale homogenization of the melt.
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    Ceria/silicon carbide core–shell materials prepared by miniemulsion technique
    (Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2011) Borchardt, Lars; Oschatz, Martin; Frind, Robert; Kockrick, Emanuel; Lohe, Martin R.; Hauser, Christoph P.; Weiss, Clemens K.; Landfester, Katharina; Büchner, Bernd; Kaskel, Stefan
    For the first time we present the synthesis of CeO2/Si(O)C core–shell particles prepared by the miniemulsion technique. The Si(O)C core was obtained by means of a polycarbosilane precursor (SMP10), which was subsequently functionalized with ceria and pyrolyzed to the ceramic. The size of these particles could easily be adjusted by varying the surfactants and the surfactant concentration, or by the addition of comonomers. Hence particle sizes ranged from 100 to 1000 nm, tunable by the preparation conditions. All materials were characterized by photon cross correlation spectroscopy, scanning electron microscopy and elemental mapping investigations. Furthermore, first catalytic tests were carried out by temperature programmed oxidation (TPO) of methane, and the activity of this material in lowering the onset temperature of methane combustion by 262 K was documented.
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    Dynamics of serrated flow in a bulk metallic glass
    (New York : American Institute of Physics, 2011) Ren, J.L.; Chen, C.; Wang, G.; Mattern, N.; Eckert, J.
    Under compression loading, bulk metallic glasses (BMGs) irreversibly deform through shear banding manifested as a serrated flow behavior. By using a statistical analysis together with a complementary dynamical analysis of the stress-time curves during serrated flow, we characterize the distinct spatiotemporal dynamical regimes and find that the plastic dynamic behavior of a Cu50Zr45Ti5 BMG changes from chaotic to self-organized critical behavior with increasing strain rate. This plastic dynamics transition with the strain rate is interpreted in the frame of the competence between the neighboring elastic strain field forming and relaxation processes.
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    Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations
    (Bristol : IOP Publishing, 2012) Murota, Junichi; Sakuraba, Masao; Tillack, Bernd
    One of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x=0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si1-xGex (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si1−xGex (100), segregation of P atoms is suppressed by using Si2H6 instead of SiH4 at a low temperature of 450 °C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si1−xGex/Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs.
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    Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes
    (London : Hindawi, 2012) Kasper, E.; Oehme, M.; Arguirov, T.; Werner, J.; Kittler, M.; Schulze, J.
    Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems fromcarrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
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    Carboxylated nitrile butadiene rubber/hybrid filler composites
    (São Carlos : Universidade Federal de São Carlos, 2012) Mousa, A.; Heinrich, G.; Simon, F.; Wagenknecht, U.; Stöckelhuber, K.-W.; Dweiri, R.
    The surface properties of the OSW and NLS are measured with the dynamic contact-angle technique. The x-ray photoelectron spectroscopy (XPS) of the OSW reveals that the OSW possesses various reactive functional groups namely hydroxyl groups (OH). Hybrid filler from NLS and OSW were incorporated into carboxylated nitrile rubber (XNBR) to produce XNBR hybrid composites. The reaction of OH groups from the OSW with COOH of the XNBR is checked by attenuated total reflectance spectra (ATR-IR) of the composites. The degree of curing ΔM (maximum torque-minimum torque) as a function of hybrid filler as derived from moving die rheometer (MDR) is reported. The stress-strain behavior of the hybrid composites as well as the dynamic mechanical thermal analysis (DMTA) is studied. Bonding quality and dispersion of the hybrid filler with and in XNBR are examined using scanning-transmission electron microscopy (STEM in SEM).
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    Thin film deposition using energetic ions
    (Basel : MDPI, 2010) Manova, D.; Gerlach, J.W.; Mändl, S.
    One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes. © 2010 by the authors.
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    Non-isothermal kinetic analysis of the crystallization of metallic glasses using the master curve method
    (Basel : MDPI, 2011) Torrens-Serra, Joan; Venkataraman, Shankar; Stoica, Mihai; Kuehn, Uta; Roth, Stefan; Eckert, Jürgen
    The non-isothermal transformation rate curves of metallic glasses are analyzed with the Master Curve method grounded in the Kolmogorov-Johnson-Mehl-Avrami theory. The method is applied to the study of two different metallic glasses determining the activation energy of the transformation and the experimental kinetic function that is analyzed using Avrami kinetics. The analysis of the crystallization of Cu47Ti33Zr11Ni8Si1 metallic glassy powders gives Ea = 3.8 eV, in good agreement with the calculation by other methods, and a transformation initiated by an accelerating nucleation and diffusion-controlled growth. The other studied alloy is a Nanoperm-type Fe77Nb7B15Cu1 metallic glass with a primary crystallization of bcc-Fe. An activation energy of Ea = 5.7 eV is obtained from the Master Curve analysis. It is shown that the use of Avrami kinetics is not able to explain the crystallization mechanisms in this alloy giving an Avrami exponent of n = 1.
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    Carbon nanotubes filled with ferromagnetic materials
    (Basel : MDPI, 2010) Weissker, Uhland; Hampel, Silke; Leonhardt, Albrecht; Büchner, Bernd
    Carbon nanotubes (CNT) filled with ferromagnetic metals like iron, cobalt or nickel are new and very interesting nanostructured materials with a number of unique properties. In this paper we give an overview about different chemical vapor deposition (CVD) methods for their synthesis and discuss the influence of selected growth parameters. In addition we evaluate possible growth mechanisms involved in their formation. Moreover we show their identified structural and magnetic properties. On the basis of these properties we present different application possibilities. Some selected examples reveal the high potential of these materials in the field of medicine and nanotechnology.