Filters

Reset filters

Settings

End date: 2018 × Start date: 2018 × DDC: 620 × Has files: Yes × Type: Text × WGL Institute: PDI ×

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Doppler-free spectroscopy with a terahertz quantum-cascade laser
    (Washington, DC : Optical Society of America, 2018) Wienold, M.; Alam, T.; Schrottke, L.; Grahn, H.T.; Hübers, H.-W.
    We report on the Doppler-free saturation spectroscopy of a molecular transition at 3.3 THz based on a quantum-cascade laser and an absorption cell in a collinear pump-probe configuration. A Lamb dip with a sub-Doppler linewidth of 170 kHz is observed for a rotational transition of HDO. We found that a certain level of external optical feedback is tolerable as long as the free spectral range of the external cavity is large compared to the width of the absorption line.
  • Thumbnail Image
    Item
    Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys
    (London : Nature Publishing, 2018) Boschker, Jos E.; Lü, Xiang; Bragaglia, Valeria; Wang,Ruining; Grahn, Holger T.; Calarco, Raffaella
    Phase change materials such as pseudobinary GeTe-Sb2Te3 (GST) alloys are an essential part of existing and emerging technologies. Here, we investigate the electrical and optical properties of epitaxial phase change materials: α-GeTe, Ge2Sb2Te5 (GST225), and Sb2Te3. Temperature-dependent Hall measurements reveal a reduction of the hole concentration with increasing temperature in Sb2Te3 that is attributed to lattice expansion, resulting in a non-linear increase of the resistivity that is also observed in GST225. Fourier transform infrared spectroscopy at room temperature demonstrates the presence of electronic states within the energy gap for α-GeTe and GST225. We conclude that these electronic states are due to vacancy clusters inside these two materials. The obtained results shed new light on the fundamental properties of phase change materials such as the high dielectric constant and persistent photoconductivity and have the potential to be included in device simulations.
  • Thumbnail Image
    Item
    Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure
    (London : Nature Publishing, 2018) Ishikawa, Fumitaro; Higashi, Kotaro; Fuyuno, Satoshi; Morifuji, Masato; Kondow, Masahiko; Trampert, Achim
    We study the effects of annealing on (Ga0.64,In0.36) (N0.045,As0.955) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.