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- ItemUltrafast inter-ionic charge transfer of transition-metal complexes mapped by femtosecond x-ray powder diffraction(Les Ulis : EDP Sciences, 2013) Zamponi, F.; Freyer, B.; Juvé, V.; Stingl, J.; Woerner, M.; Chergui, M.; Elsaesser, T.Transient electron density maps are derived from x-ray diffraction patterns of photoexcited [Fe(bpy)3]2+(PF6 -)2 powder. Upon photoexcitation, the 5T 2 quintet state reveals a charge transfer from the PF 6- ions and from the Fe atoms to neighboring bpy units. The charge transfer from the Fe points to a partial and weak charge-transfer character of this state.
- ItemThe spin-flip scattering effect in the spin transport in silicon doped with bismuth(Bristol : IOP Publ., 2017) Ezhevskii, A.A.; Detochenko, A.P.; Soukhorukov, A.V.; Guseinov, D.V.; Kudrin, A.V.; Abrosimov, N.V.; Riemann, H.Spin transport of conduction electrons in silicon samples doped with bismuth in the 1.1•1013 - 7.7•1015 cm-3 concentration range was studied by the Hall effect measurements. The dependence of the Hall voltage magnitude on the magnetic field is the sum of the normal and spin Hall effects. The electrons are partially polarized by an external magnetic field and are scattered by the bismuth spin-orbit potential. Spin-flip scattering results in the additional electromotive force which compensates the normal Hall effect in strong magnetic fields.
- ItemAxial GaAs/Ga(As, Bi) nanowire heterostructures(Bristol : IOP Publ., 2019) Oliva, Miriam; Gao, Guanhui; Luna, Esperanza; Geelhaar, Lutz; Lewis, Ryan BBi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth conditions, which pose severe challenges for planar growth. In this work, we exploit the naturally-Ga-rich environment present inside the metallic droplet of a self-catalyzed GaAs nanowire (NW) to synthesize metastable GaAs/GaAs1-xBi x axial NW heterostructures with high Bi contents. The axial GaAs1-xBi x segments are realized with molecular beam epitaxy by first enriching only the vapor-liquid-solid (VLS) Ga droplets with Bi, followed by exposing the resulting Ga-Bi droplets to As2 at temperatures ranging from 270 °C to 380 °C to precipitate GaAs1-xBi x only under the NW droplets. Microstructural and elemental characterization reveals the presence of single crystal zincblende GaAs1-xBi x axial NW segments with Bi contents up to (10 ± 2)%. This work illustrates how the unique local growth environment present during the VLS NW growth can be exploited to synthesize heterostructures with metastable compounds. © 2019 IOP Publishing Ltd.
- ItemTopology determines force distributions in one-dimensional random spring networks(Woodbury, NY : Inst., 2018) Heidemann, Knut M.; Sageman-Furnas, Andrew O.; Sharma, Abhinav; Rehfeldt, Florian; Schmidt, Christoph F.; Wardetzky, MaxNetworks of elastic fibers are ubiquitous in biological systems and often provide mechanical stability to cells and tissues. Fiber-reinforced materials are also common in technology. An important characteristic of such materials is their resistance to failure under load. Rupture occurs when fibers break under excessive force and when that failure propagates. Therefore, it is crucial to understand force distributions. Force distributions within such networks are typically highly inhomogeneous and are not well understood. Here we construct a simple one-dimensional model system with periodic boundary conditions by randomly placing linear springs on a circle. We consider ensembles of such networks that consist of N nodes and have an average degree of connectivity z but vary in topology. Using a graph-theoretical approach that accounts for the full topology of each network in the ensemble, we show that, surprisingly, the force distributions can be fully characterized in terms of the parameters (N,z). Despite the universal properties of such (N,z) ensembles, our analysis further reveals that a classical mean-field approach fails to capture force distributions correctly. We demonstrate that network topology is a crucial determinant of force distributions in elastic spring networks.
- ItemPhonon driven charge dynamics in polycrystalline acetylsalicylic acid mapped by ultrafast x-ray diffraction(Melville, NY : AIP Publishing LLC, 2019) Hauf, Christoph; Hernandez Salvador, Antonio-Andres; Holtz, Marcel; Woerner, Michael; Elsaesser, ThomasThe coupled lattice and charge dynamics induced by phonon excitation in polycrystalline acetylsalicylic acid (aspirin) are mapped by femtosecond x-ray powder diffraction. The hybrid-mode character of the 0.9 ± 0.1 THz methyl rotation in the aspirin molecules is evident from collective charge relocations over distances of some 100 pm, much larger than the sub-picometer nuclear displacements. Oscillatory charge relocations around the methyl group generate a torque on the latter, thus coupling electronic and nuclear motions.
- ItemDynamic volume magnetic domain wall imaging in grain oriented electrical steel at power frequencies with accumulative high-frame rate neutron dark-field imaging(London : Nature Publishing Group, 2018) Harti, R.P.; Strobl, M.; Schäfer, R.; Kardjilov, N.; Tremsin, A.S.; Grünzweig, C.The mobility of magnetic domains forms the link between the basic physical properties of a magnetic material and its global characteristics such as permeability and saturation field. Most commonly, surface domain structure are studied using magneto-optical Kerr microscopy. The limited information depth of approx. 20 nanometers, however, allows only for an indirect interpretation of the internal volume domain structures. Here we show how accumulative high-frame rate dynamic neutron dark-field imaging is able for the first time to visualize the dynamic of the volume magnetic domain structures in grain oriented electrical steel laminations at power frequencies. In particular we studied the volume domain structures with a spatial resolution of ∼100 μm and successfully quantified domain sizes, wall velocities, domain annihilation and its duration and domain wall multiplication in real time recordings at power frequencies of 10, 25 and 50 Hz with ±262.5 A/m and ±525 A/m (peak to peak) applied field.
- ItemContinuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination(New York : American Institute of Physics, 2017) Hempel, Martin; Röben, Benjamin; Niehle, Michael; Schrottke, Lutz; Trampert, Achim; Grahn, Holger T.The dynamical tuning due to rear facet illumination of single-mode, terahertz (THz) quantum-cascade lasers (QCLs) which employ distributed feedback gratings are compared to the tuning of single-mode QCLs based on two-section cavities. The THz QCLs under investigation emit in the range of 3 to 4.7 THz. The tuning is achieved by illuminating the rear facet of the QCL with a fiber-coupled light source emitting at 777 nm. Tuning ranges of 5.0 and 11.9 GHz under continuous-wave and pulsed operation, respectively, are demonstrated for a single-mode, two-section cavity QCL emitting at about 3.1 THz, which exhibits a side-mode suppression ratio better than -25 dB.
- ItemBicrystalline grain boundary junctions of Co-doped and P-doped Ba-122 thin films(Milton Park : Taylor & Francis, 2014) Schmidt, S.; Döring, S.; Schmidl, F.; Kurth, F.; Iida, K.; Holzapfel, B.; Kawaguchi, T.; Mori, Y.; Ikuta, H.; Seidel, P.We prepared GB junctions of Ba(Fe0.9Co0.1)2As2 thin films on bicrystalline [00 l]-tilt SrTiO3 substrates. The junctions show clear Josephson effects. Electrical characterization shows asymmetric I-V characteristics which can be described within the resistively shunted junction (RSJ) model. A large excess current is observed. Their formal ICRN product is 20.2 μV at 4.2 K, which is decreased to 6.5 μV when taking Iex into account. Fabrication methods to increase this value are discussed. Additionally, measurements on GB junctions of BaFe2(As0.66P0.34)2 thin films on LSAT bicrystalline substrates are shown. Their symmetric RSJ/flux flow-behavior exhibits a formal ICRN product of 45 μV, whereas the excess corrected value is ll μV.
- ItemFe1-xNix alloy nanoparticles encapsulated inside carbon nanotubes: Controlled synthesis, structure and magnetic properties(Basel : MDPI AG, 2018) Ghunaim, R.; Damm, C.; Wolf, D.; Lubk, A.; Büchner, B.; Mertig, M.; Hampel, S.In the present work, different synthesis procedures have been demonstrated to fill carbon nanotubes (CNTs) with Fe1-xNix alloy nanoparticles (x = 0.33, 0.5). CNTs act as templates for the encapsulation of magnetic nanoparticles, and provide a protective shield against oxidation as well as prevent nanoparticles agglomeration. By variation of the reaction parameters, the purity of the samples, degree of filling, the composition and size of filling nanoparticles have been tailored and therefore the magnetic properties. The samples were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Bright-field (BF) TEM tomography, X-ray powder diffraction, superconducting quantum interference device (SQUID) and thermogravimetric analysis (TGA). The Fe1-x Nix-filled CNTs show a huge enhancement in the coercive fields compared to the corresponding bulk materials, which make them excellent candidates for several applications such as magnetic storage devices.
- ItemIncreasing the performance of a superconducting spin valve using a Heusler alloy(Frankfurt am Main : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2018) Kamashev, A.A.; Validov, A.A.; Schumann, J.; Kataev, V.; Büchner, B.; Fominov, Y.V.; Garifullin, I.A.We have studied superconducting properties of spin-valve thin-layer heterostructures CoOx/F1/Cu/F2/Cu/Pb in which the ferromagnetic F1 layer was made of Permalloy while for the F2 layer we have taken a specially prepared film of the Heusler alloy Co2Cr1-xFexAl with a small degree of spin polarization of the conduction band. The heterostructures demonstrate a significant superconducting spin-valve effect, i.e., a complete switching on and offof the superconducting current flowing through the system by manipulating the mutual orientations of the magnetization of the F1 and F2 layers. The magnitude of the effect is doubled in comparison with the previously studied analogous multilayers with the F2 layer made of the strong ferromagnet Fe. Theoretical analysis shows that a drastic enhancement of the switching effect is due to a smaller exchange field in the heterostructure coming from the Heusler film as compared to Fe. This enables to approach an almost ideal theoretical magnitude of the switching in the Heusler-based multilayer with a F2 layer thickness of ca. 1 nm. © 2018 Kamashev et al.