(Cambridge : Royal Society of Chemistry, 2016) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.
We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred
to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and
compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical
characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge
carriers have been examined and compared with InSb nanowires obtained in the same system for
electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system
geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the
bulk material (0.17 eV) and InSb nanowires (0.195 eV).
