Search Results

Now showing 1 - 10 of 11
  • Item
    Magnetization Dynamics of an Individual Single-Crystalline Fe-Filled Carbon Nanotube
    (Weinheim : Wiley-VCH, 2019) Lenz, Kilian; Narkowicz, Ryszard; Wagner, Kai; Reiche, Christopher F.; Körner, Julia; Schneider, Tobias; Kákay, Attila; Schultheiss, Helmut; Weissker, Uhland; Wolf, Daniel; Suter, Dieter; Büchner, Bernd; Fassbender, Jürgen; Mühl, Thomas; Lindner, Jürgen
    The magnetization dynamics of individual Fe-filled multiwall carbon-nanotubes (FeCNT), grown by chemical vapor deposition, are investigated by microresonator ferromagnetic resonance (FMR) and Brillouin light scattering (BLS) microscopy and corroborated by micromagnetic simulations. Currently, only static magnetometry measurements are available. They suggest that the FeCNTs consist of a single-crystalline Fe nanowire throughout the length. The number and structure of the FMR lines and the abrupt decay of the spin-wave transport seen in BLS indicate, however, that the Fe filling is not a single straight piece along the length. Therefore, a stepwise cutting procedure is applied in order to investigate the evolution of the ferromagnetic resonance lines as a function of the nanowire length. The results show that the FeCNT is indeed not homogeneous along the full length but is built from 300 to 400 nm long single-crystalline segments. These segments consist of magnetically high quality Fe nanowires with almost the bulk values of Fe and with a similar small damping in relation to thin films, promoting FeCNTs as appealing candidates for spin-wave transport in magnonic applications. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  • Item
    Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: Evidences for light localization effect
    (New York, NY [u.a.] : Springer, 2012) Osminkina, L.A.; Gonchar, K.A.; Marshov, V.S.; Bunkov, K.V.; Petrov, D.V.; Golovan, L.A.; Talkenberg, F.; Sivakov, V.A.; Timoshenko, V.Y.
    We study the structure and optical properties of arrays of silicon nanowires (SiNWs) with a mean diameter of approximately 100 nm and length of about 1-25 μm formed on crystalline silicon (c-Si) substrates by using metal-assisted chemical etching in hydrofluoric acid solutions. In the middle infrared spectral region, the reflectance and transmittance of the formed SiNW arrays can be described in the framework of an effective medium with the effective refractive index of about 1.3 (porosity, approximately 75%), while a strong light scattering for wavelength of 0.3 ÷ 1 μm results in a decrease of the total reflectance of 1%-5%, which cannot be described in the effective medium approximation. The Raman scattering intensity under excitation at approximately 1 μm increases strongly in the sample with SiNWs in comparison with that in c-Si substrate. This effect is related to an increase of the light-matter interaction time due to the strong scattering of the excitation light in SiNW array. The prepared SiNWs are discussed as a kind of 'black silicon', which can be formed in a large scale and can be used for photonic applications as well as in molecular sensing.
  • Item
    In-situ quasi-instantaneous e-beam driven catalyst-free formation of crystalline aluminum borate nanowires
    (London : Nature Publishing Group, 2016) Gonzalez-Martinez, Ignacio G.; Gemming, Thomas; Mendes, Rafael; Bachmatiuk, Alicja; Bezugly, Viktor; Kunstmann, Jens; Eckert, Jürgen; Cuniberti, Gianaurelio; Rümmeli, Mark H.
    The catalyst-assisted nucleation and growth mechanisms for many kinds of nanowires and nanotubes are pretty well understood. At times, though, 1D nanostructures form without a catalyst and the argued growth modes have inconsistencies. One such example is the catalyst-free growth of aluminium borate nanowires. Here we develop an in-situ catalyst-free room temperature growth route for aluminium nanowires using the electron beam in a transmission electron microscope. We provide strong experimental evidence that supports a formation process that can be viewed as a phase transition in which the generation of free-volume induced by the electron beam irradiation enhances the atomic mobility within the precursor material. The enhanced atomic mobility and specific features of the crystal structure of Al5BO9 drive the atomic rearrangement that results in the large scale formation of highly crystalline aluminium borate nanowires. The whole formation process can be completed within fractions of a second. Our developed growth mechanism might also be extended to describe the catalyst-free formation of other nanowires.
  • Item
    Electrochemically deposited nanocrystalline InSb thin films and their electrical properties
    (Cambridge : Royal Society of Chemistry, 2016) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.
    We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).
  • Item
    Nanowire-supported plasmonic waveguide for remote excitation of surface-enhanced Raman scattering
    (London : Nature Publishing Group, 2014) Huang, Y.; Fang, Y.; Zhang, Z.; Zhu, L.; Sun, M.
    Due to its amazing ability to manipulate light at the nanoscale, plasmonics has become one of the most interesting topics in the field of light-matter interaction. As a promising application of plasmonics, surface-enhanced Raman scattering (SERS) has been widely used in scientific investigations and material analysis. The large enhanced Raman signals are mainly caused by the extremely enhanced electromagnetic field that results from localized surface plasmon polaritons. Recently, a novel SERS technology called remote SERS has been reported, combining both localized surface plasmon polaritons and propagating surface plasmon polaritons (PSPPs, or called plasmonic waveguide), which may be found in prominent applications in special circumstances compared to traditional local SERS. In this article, we review the mechanism of remote SERS and its development since it was first reported in 2009. Various remote metal systems based on plasmonic waveguides, such as nanoparticle-nanowire systems, single nanowire systems, crossed nanowire systems and nanowire dimer systems, are introduced, and recent novel applications, such as sensors, plasmon-driven surface-catalyzed reactions and Raman optical activity, are also presented. Furthermore, studies of remote SERS in dielectric and organic systems based on dielectric waveguides remind us that this useful technology has additional, tremendous application prospects that have not been realized in metal systems.
  • Item
    Correction: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties (Journal of Materials Chemistry C (2016) 4 (1345-1350) DOI: 10.1039/C5TC03656A)
    (London : RSC Publ., 2019) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.
    There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.
  • Item
    Confined crystals of the smallest phase-change material
    (Washington, DC : American Chemical Society, 2013) Giusca, C.E.; Stolojan, V.; Sloan, J.; Börrnert, F.; Shiozawa, H.; Sader, K.; Rümmeli, M.H.; Büchner, B.; Silva, S.R.P.
    The demand for high-density memory in tandem with limitations imposed by the minimum feature size of current storage devices has created a need for new materials that can store information in smaller volumes than currently possible. Successfully employed in commercial optical data storage products, phase-change materials, that can reversibly and rapidly change from an amorphous phase to a crystalline phase when subject to heating or cooling have been identified for the development of the next generation electronic memories. There are limitations to the miniaturization of these devices due to current synthesis and theoretical considerations that place a lower limit of 2 nm on the minimum bit size, below which the material does not transform in the structural phase. We show here that by using carbon nanotubes of less than 2 nm diameter as templates phase-change nanowires confined to their smallest conceivable scale are obtained. Contrary to previous experimental evidence and theoretical expectations, the nanowires are found to crystallize at this scale and display amorphous-to-crystalline phase changes, fulfilling an important prerequisite of a memory element. We show evidence for the smallest phase-change material, extending thus the size limit to explore phase-change memory devices at extreme scales.
  • Item
    Microscopic insight into the bilateral formation of carbon spirals from a symmetric iron core
    (London : Nature Publishing Group, 2013) Shiozawa, Hidetsugu; Bachmatiuk, Alicja; Stangl, Andreas; Cox, David C.; Silva, S. Ravi P.; Rümmeli, Mark; Pichler, Thomas
    Mirrored carbon-spirals have been produced from pressured ferrocene via the bilateral extrusion of the spiral pairs from an iron core. A parametric plot of the surface geometry displays the fractal growth of the conical helix made with the logarithmic spiral. Electron microscopy studies show the core is a crystalline cementite which grows and transforms its shape from spherical to biconical as it extrudes two spiralling carbon arms. In a cross section along the arms we observe graphitic flakes arranged in a herringbone structure, normal to which defects propagate. Local-wave-pattern analysis reveals nanoscale defect patterns of two-fold symmetry around the core. The data suggest that the bilateral growth originates from a globular cementite crystal with molten surfaces and the nano-defects shape emerging hexagonal carbon into a fractal structure. Understanding and knowledge obtained provide a basis for the controlled production of advanced carbon materials with designed geometries.
  • Item
    Transition to the quantum hall regime in InAs nanowire cross-junctions
    (Bristol : IOP Publ., 2019) Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Bologna, Nicolas; Rossell, Marta D.; Wirths, Stephan; Moselund, Kirsten; Nielsch, Kornelius; Riel, Heike
    We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross-junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve 2 /h) -1 . e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase. © 2019 IOP Publishing Ltd.
  • Item
    InN nanowires: Growth and optoelectronic properties
    (Basel : MDPI AG, 2012) Calarco, R.
    An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.