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End date: 2019 × Start date: 2010 × Type: Text × Publisher: Cambridge : RSC Publ. × WGL Institute: IHP ×

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    Post deposition annealing of epitaxial Ce1-xPrxO2-δ films grown on Si(111)
    (Cambridge : RSC Publ., 2015) Wilkens, H.; Spieß, W.; Zoellner, M.H.; Niu, G.; Schroeder, T.; Wollschläger, J.
    In this work the structural and morphological changes of Ce1−xPrxO2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealing temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed.