2013, Mogilatenko, A., Kirmse, H., Hagedorn, S., Richter, E., Zeimer, U., Weyers, M., Tränkle, G.

a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1bar 100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11bar 20](Al,Ga)N