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- ItemContribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)(Milton Park : Taylor & Francis, 2013) Fromm, F.; Oliveira Jr, M.H.; Molina-Sánchez, A.; Hundhausen, M.; Lopes, J.M.J.; Riechert, H.; Wirtz, L.; Seyller, T.We report a Raman study of the so-called buffer layer with (6 3 x 6 3)R30 periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.
- ItemGiant multiferroic effects in topological GeTe-Sb2Te3 superlattices(Milton Park : Taylor & Francis, 2015) Tominaga, Junji; Kolobov, Alexander V.; Fons, Paul J.; Wang, Xiaomin; Saito, Yuta; Nakano, Takashi; Hase, Muneaki; Murakami, Shuichi; Herfort, Jens; Takagaki, YukihikoMultiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3)l]m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.
- ItemStructural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy(Milton Park : Taylor & Francis, 2013) Schumann, T.; Dubslaff, M.; Oliveira, M.H.; Hanke, M.; Fromm, F.; Seyller, T.; Nemec, L.; Blum, V.; Scheffler, M.; Lopes, J.M.J.Growth of nanocrystalline graphene films on (6√3 × 6√3)R30°-reconstructed SiC surfaces was achieved by molecular beam epitaxy, enabling the investigation of quasi-homoepitaxial growth. The structural quality of the graphene films, which is investigated by Raman spectroscopy, increases with growth time. X-ray photoelectron spectroscopy proves that the SiC surface reconstruction persists throughout the growth process and that the synthesized films consist of sp2-bonded carbon. Interestingly, grazing incidence x-ray diffraction measurements show that the graphene domains possess one single in-plane orientation, are aligned to the substrate, and offer a noticeably contracted lattice parameter of 2.450 Å. We correlate this contraction with theoretically calculated reference values (all-electron density functional calculations based on the van der Waals corrected Perdew–Burke–Ernzerhof functional) for the lattice parameter contraction induced in ideal, free-standing graphene sheets by: substrate-induced buckling, the edges of limited-size flakes and typical point defects (monovacancies, divacancies, Stone–Wales defects).
- ItemSpatial self-organization of macroscopic quantum states of exciton-polaritons in acoustic lattices(Milton Park : Taylor & Francis, 2016) Buller, J.V.T.; Cerda-Méndez, E.A.; Balderas-Navarro, R.E.; Biermann, K.; Santos, P.V.Exciton-polariton systems can sustain macroscopic quantum states (MQSs) under a periodic potential modulation. In this paper, we investigate the structure of these states in acoustic square lattices by probing their wave functions in real and momentum spaces using spectral tomography. We show that the polariton MQSs, when excited by a Gaussian laser beam, self-organize in a concentric structure, consisting of a single, two-dimensional gap-soliton (GS) state surrounded by one dimensional (1D) MQSs with lower energy. The latter form at hyperbolical points of the modulated polariton dispersion. While the size of the GS tends to saturate with increasing particle density, the emission region of the surrounding 1D states increases. The existence of these MQSs in acoustic lattices is quantitatively supported by a theoretical model based on the variational solution of the Gross–Pitaevskii equation. The formation of the 1D states in a ring around the central GS is attributed to the energy gradient in this region, which reduces the overall symmetry of the lattice. The results broaden the experimental understanding of self-localized polariton states, which may prove relevant for functionalities exploiting solitonic objects.
- ItemMechanism of non-classical light emission from acoustically populated (311)A GaAs quantum wires(Milton Park : Taylor & Francis, 2012) Lazić, S.; Hey, R.; Santos, P.V.We employ surface acoustic waves (SAWs) to control the transfer of photo-generated carriers between interconnected quantum wells and quantum wires (QWRs) grown on pre-patterned (311)A GaAs substrates. Optical studies, carried out under remote acoustic excitation of a single QWR, have shown sharp photoluminescence lines and antibunched photons with tunable emission energy. These features are attributed to recombination of acoustically transported carriers in potential inhomogeneities within the wire. The origin of the photon antibunching is discussed in terms of a 'bottleneck' in the number of carriers trapped in the QWR, which restricts the number of recombination events per SAW cycle. We propose a model for antibunching based on the trapping of carriers induced by the SAW piezoelectric field in states at the interface between the GaAs QWR and the AlGaAs barriers. Non-classical light is emitted during the subsequent release of the trapped carriers into the recombination centers within the wire. The spatial distribution of the emitting recombination centers is estimated using time-resolved measurements.
- ItemToward edges-rich MoS2 layers via chemical liquid exfoliation triggering distinctive magnetism(Milton Park : Taylor & Francis, 2016) Gao, Guanhui; Chen, Chi; Xie, Xiaobin; Su, Yantao; Kang, Shendong; Zhu, Guichi; Gao, Duyang; Eckert, Jürgen; Trampert, Achim; Cai, LintaoThe magnetic function of layered molybdenum disulfide (MoS2) has been investigated via simulation, but few reliable experimental results have been explored. Herein, we developed edges-rich structural MoS2 nanosheets via liquid phase exfoliation approach, triggering exceptional ferromagnetism. The magnetic measurements revealed the clear ferromagnetic property of layered MoS2, compared to the pristine MoS2 in bulk exhibiting diamagnetism. The existence of ferromagnetism mostly was attributed to the presence of grain boundaries with abundant irregular edges confirmed by the transmission electron microscopy, magnetic force microscopy and X-ray photoelectron spectroscopy, which experimentally provided reliable evidences on irregular edges-rich states engineering ferromagnetism to clarify theoretical calculation.
- ItemImportance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires(Milton Park : Taylor & Francis, 2015) Corfdir, Pierre; Feix, Felix; Zettler, Johannes K.; Fernández-Garrido, Sergio; Brandt, OliverWe investigate the polarization of excitonic transitions of single dispersed GaN nanowires with a diameter of about 50 nm. We observe donor-bound exciton transitions with a linewidth narrower than 250 μeV at 10 K, whereas the luminescence from free excitons exhibits a width of up to 5 meV. This broadening is larger than that observed for free excitons in the as-grown nanowire ensemble and is the result of inhomogeneous strain introduced by the nanowire dispersion. This strain lowers the symmetry of the lattice structure and allows A excitons to emit light polarized parallel to the nanowire axis. The polarization anisotropy of A excitons, however, is found to largely vary from one nanowire to another. In addition, the various bound-exciton lines in a given nanowire do not show the same polarization anisotropies. These findings can be explained by the dielectric contrast between the nanowire and its environment, but only when taking into account the strong variations of the dielectric function of GaN at the near band-edge.