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End date: 2019 × Start date: 2012 × DDC: 620 × Type: Article × WGL Institute: PDI ×

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Now showing 1 - 10 of 26
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    Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms
    (Washington, DC : ACS, 2017) Huang, Huiying; Trotta, Rinaldo; Huo, Yongheng; Lettner, Thomas; Wildmann, Johannes S.; Martín-Sánchez, Javier; Huber, Daniel; Reindl, Marcus; Zhang, Jiaxiang; Zallo, Eugenio; Schmidt, Oliver G.; Rastelli, Armando
    We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.
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    InN nanowires: Growth and optoelectronic properties
    (Basel : MDPI AG, 2012) Calarco, R.
    An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
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    Crystal phase quantum well emission with digital control
    (Washington D.C. : American Chemical Society, 2017) Assali, S.; Lähnemann, J.; Vu, T.T.T.; Jöns, K.D.; Gagliano, L.; Verheijen, M.A.; Akopian, N.; Bakkers, E.P.A.M.; Haverkort, J.E.M.
    One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.
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    Wavelength-tunable sources of entangled photons interfaced with atomic vapours
    (London : Nature Publishing Group, 2016) Trotta, Rinaldo; Martín-Sánchez, Javier; Wildmann, Johannes S.; Piredda, Giovanni; Reindl, Marcus; Schimpf, Christian; Zallo, Eugenio; Stroj, Sandra; Edlinger, Johannes; Rastelli, Armando
    The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled photons. A single semiconductor quantum dot is one of the most attractive, as it can generate indistinguishable entangled photons deterministically and is compatible with current photonic-integration technologies. However, the lack of control over the energy of the entangled photons is hampering the exploitation of dissimilar quantum dots in protocols requiring the teleportation of quantum entanglement over remote locations. Here we introduce quantum dot-based sources of polarization-entangled photons whose energy can be tuned via three-directional strain engineering without degrading the degree of entanglement of the photon pairs. As a test-bench for quantum communication, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using optoelectronic devices.
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    Interface formation of two- and three-dimensionally bonded materials in the case of GeTe–Sb2Te3 superlattices
    (Cambridge : Royal Society of Chemistry, 2015) Momand, Jamo; Wang, Ruining; Boschker, Jos E.; Verheijen, Marcel A.; Calarcob, Raffaella; Kooi, Bart J.
    GeTe–Sb2Te3 superlattices are nanostructured phase-change materials which are under intense investigation for non-volatile memory applications. They show superior properties compared to their bulk counterparts and significant efforts exist to explain the atomistic nature of their functionality. The present work sheds new light on the interface formation between GeTe and Sb2Te3, contradicting previously proposed models in the literature. For this purpose [GeTe(1 nm)–Sb2Te3(3 nm)]15 superlattices were grown on passivated Si(111) at 230 °C using molecular beam epitaxy and they have been characterized particularly with cross-sectional HAADF scanning transmission electron microscopy. Contrary to the previously proposed models, it is found that the ground state of the film actually consists of van der Waals bonded layers (i.e. a van der Waals heterostructure) of Sb2Te3 and rhombohedral GeSbTe. Moreover, it is shown by annealing the film at 400 °C, which reconfigures the superlattice into bulk rhombohedral GeSbTe, that this van der Waals layer is thermodynamically favored. These results are explained in terms of the bonding dimensionality of GeTe and Sb2Te3 and the strong tendency of these materials to intermix. The findings debate the previously proposed switching mechanisms of superlattice phase-change materials and give new insights in their possible memory application.
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    Toward edges-rich MoS2 layers via chemical liquid exfoliation triggering distinctive magnetism
    (Milton Park : Taylor & Francis, 2016) Gao, Guanhui; Chen, Chi; Xie, Xiaobin; Su, Yantao; Kang, Shendong; Zhu, Guichi; Gao, Duyang; Eckert, Jürgen; Trampert, Achim; Cai, Lintao
    The magnetic function of layered molybdenum disulfide (MoS2) has been investigated via simulation, but few reliable experimental results have been explored. Herein, we developed edges-rich structural MoS2 nanosheets via liquid phase exfoliation approach, triggering exceptional ferromagnetism. The magnetic measurements revealed the clear ferromagnetic property of layered MoS2, compared to the pristine MoS2 in bulk exhibiting diamagnetism. The existence of ferromagnetism mostly was attributed to the presence of grain boundaries with abundant irregular edges confirmed by the transmission electron microscopy, magnetic force microscopy and X-ray photoelectron spectroscopy, which experimentally provided reliable evidences on irregular edges-rich states engineering ferromagnetism to clarify theoretical calculation.
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    Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
    (Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2019) van Treeck, David; Ledig, Johannes; Scholz, Gregor; Lähnemann, Jonas; Musolino, Mattia; Tahraoui, Abbes; Brandt, Oliver; Waag, Andreas; Riechert, Henning; Geelhaar, Lutz
    We present the combined analysis of electroluminescence (EL) and current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I-V characteristics are described well by a modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single-NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single-NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows for a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool. © 2019 van Treeck et al.
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    Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions
    (London : Institute of Physics, 2014) Wofford, J.M.; Oliveira Jr, M.H.; Schumann, T.; Jenichen, B.; Ramsteiner, M.; Jahn, U.; Fölsch, S.; Lopes, J.M.J.; Riechert, H.
    Graphene is grown by molecular beam epitaxy using epitaxial Ni films on MgO(111) as substrates. Raman spectroscopy and scanning tunneling microscopy reveal the graphene films to have few crystalline defects. While the layers are ultra-smooth over large areas, we find that Ni surface features lead to local non-uniformly thick graphene inclusions. The influence of the Ni surface structure on the position and morphology of these inclusions strongly suggests that multilayer graphene on Ni forms at the interface of the first complete layer and metal substrate in a growth-from-below mechanism. The interplay between Ni surface features and graphene growth behavior may facilitate the production of films with spatially resolved multilayer inclusions through engineered substrate surface morphology.
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    Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix
    (Washington, DC : Optical Society of America, 2015) Taliercio, Thierry; Guilengui, Vilianne NTsame; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Barho, Franziska; Rodrigo, Maria-José Milla; Gonzalez-Posada, Fernando; Tournié, Eric; Niehle, Michael; Trampert, Achim
    By using metal-free plasmonics, we report on the excitation of Fano-like resonances in the mid-infrared where the Fano asymmetric parameter, q, varies when the dielectric environment of the plasmonic resonator changes. We use silicon doped InAsSb alloy deposited by molecular beam epitaxy on GaSb substrate to realize the plasmonic resonators exclusively based on semiconductors. We first demonstrate the possibility to realize high quality samples of embedded InAsSb plasmonic resonators into GaSb host using regrowth technique. The high crystalline quality of the deposited structure is confirmed by scanning transmission electron microscopy (STEM) observation. Second, we report Fano-like resonances associated to localized surface plasmons in both cases: uncovered and covered plasmonic resonators, demonstrating a strong line shape modification. The optical properties of the embedded structures correspond to those modeled by finite-difference time-domain (FDTD) method and by a model based on Fano-like line shape. Our results show that all-semiconductor plasmonics gives the opportunity to build new plasmonic structures with embedded resonators of highly doped semiconductor in a matrix of un-doped semiconductor for mid-IR applications.
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    High-spectral-resolution terahertz imaging with a quantum-cascade laser
    (Washington, DC : Optical Society of America, 2016) Hagelschuer, Till; Rothbart, Nick; Richter, Heiko; Wienold, Martin; Schrottke, Lutz; Grahn, Holger T.; Hübers, Heinz-Wilhelm
    We report on a high-spectral-resolution terahertz imaging system operating with a multi-mode quantum-cascade laser (QCL), a fast scanning mirror, and a sensitive Ge:Ga detector. By tuning the frequency of the QCL, several spectra can be recorded in 1.5 s during the scan through a gas cell filled with methanol (CH3OH). These experiments yield information about the local absorption and the linewidth. Measurements with a faster frame rate of up to 3 Hz allow for the dynamic observation of CH3OH gas leaking from a terahertz-transparent tube into the evacuated cell. In addition to the relative absorption, the local pressure is mapped by exploiting the effect of pressure broadening.