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End date: 2019 × Start date: 2012 × DDC: 620 × Publisher: London : Nature Publishing Group ×

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Now showing 1 - 10 of 122
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    Nanowire-supported plasmonic waveguide for remote excitation of surface-enhanced Raman scattering
    (London : Nature Publishing Group, 2014) Huang, Y.; Fang, Y.; Zhang, Z.; Zhu, L.; Sun, M.
    Due to its amazing ability to manipulate light at the nanoscale, plasmonics has become one of the most interesting topics in the field of light-matter interaction. As a promising application of plasmonics, surface-enhanced Raman scattering (SERS) has been widely used in scientific investigations and material analysis. The large enhanced Raman signals are mainly caused by the extremely enhanced electromagnetic field that results from localized surface plasmon polaritons. Recently, a novel SERS technology called remote SERS has been reported, combining both localized surface plasmon polaritons and propagating surface plasmon polaritons (PSPPs, or called plasmonic waveguide), which may be found in prominent applications in special circumstances compared to traditional local SERS. In this article, we review the mechanism of remote SERS and its development since it was first reported in 2009. Various remote metal systems based on plasmonic waveguides, such as nanoparticle-nanowire systems, single nanowire systems, crossed nanowire systems and nanowire dimer systems, are introduced, and recent novel applications, such as sensors, plasmon-driven surface-catalyzed reactions and Raman optical activity, are also presented. Furthermore, studies of remote SERS in dielectric and organic systems based on dielectric waveguides remind us that this useful technology has additional, tremendous application prospects that have not been realized in metal systems.
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    Promoting abnormal grain growth in Fe-based shape memory alloys through compositional adjustments
    (London : Nature Publishing Group, 2019) Vollmer, M.; Arold, T.; Kriegel, M.J.; Klemm, V.; Degener, S.; Freudenberger, J.; Niendorf, T.
    Iron-based shape memory alloys are promising candidates for large-scale structural applications due to their cost efficiency and the possibility of using conventional processing routes from the steel industry. However, recently developed alloy systems like Fe–Mn–Al–Ni suffer from low recoverability if the grains do not completely cover the sample cross-section. To overcome this issue, here we show that small amounts of titanium added to Fe–Mn–Al–Ni significantly enhance abnormal grain growth due to a considerable refinement of the subgrain sizes, whereas small amounts of chromium lead to a strong inhibition of abnormal grain growth. By tailoring and promoting abnormal grain growth it is possible to obtain very large single crystalline bars. We expect that the findings of the present study regarding the elementary mechanisms of abnormal grain growth and the role of chemical composition can be applied to tailor other alloy systems with similar microstructural features.
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    Discovery of TaFeSb-based half-Heuslers with high thermoelectric performance
    (London : Nature Publishing Group, 2019) Zhu, H.; Mao, J.; Li, Y.; Sun, J.; Wang, Y.; Zhu, Q.; Li, G.; Song, Q.; Zhou, J.; Fu, Y.; He, R.; Tong, T.; Liu, Z.; Ren, W.; You, L.; Wang, Z.; Luo, J.; Sotnikov, A.; Bao, J.; Nielsch, K.; Chen, G.; Singh, D.J.; Ren, Z.
    Discovery of thermoelectric materials has long been realized by the Edisonian trial and error approach. However, recent progress in theoretical calculations, including the ability to predict structures of unknown phases along with their thermodynamic stability and functional properties, has enabled the so-called inverse design approach. Compared to the traditional materials discovery, the inverse design approach has the potential to substantially reduce the experimental efforts needed to identify promising compounds with target functionalities. By adopting this approach, here we have discovered several unreported half-Heusler compounds. Among them, the p-type TaFeSb-based half-Heusler demonstrates a record high ZT of ~1.52 at 973 K. Additionally, an ultrahigh average ZT of ~0.93 between 300 and 973 K is achieved. Such an extraordinary thermoelectric performance is further verified by the heat-to-electricity conversion efficiency measurement and a high efficiency of ~11.4% is obtained. Our work demonstrates that the TaFeSb-based half-Heuslers are highly promising for thermoelectric power generation.
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    Air-stable redox-active nanomagnets with lanthanide spins radical-bridged by a metal–metal bond
    (London : Nature Publishing Group, 2019) Liu, F.; Velkos, G.; Krylov, D.S.; Spree, L.; Zalibera, M.; Ray, R.; Samoylova, N.A.; Chen, C.-H.; Rosenkranz, M.; Schiemenz, S.; Ziegs, F.; Nenkov, K.; Kostanyan, A.; Greber, T.; Wolter, A.U.B.; Richter, M.; Büchner, B.; Avdoshenko, S.M.; Popov, A.A.
    Engineering intramolecular exchange interactions between magnetic metal atoms is a ubiquitous strategy for designing molecular magnets. For lanthanides, the localized nature of 4f electrons usually results in weak exchange coupling. Mediating magnetic interactions between lanthanide ions via radical bridges is a fruitful strategy towards stronger coupling. In this work we explore the limiting case when the role of a radical bridge is played by a single unpaired electron. We synthesize an array of air-stable Ln 2 @C 80 (CH 2 Ph) dimetallofullerenes (Ln 2 = Y 2 , Gd 2 , Tb 2 , Dy 2 , Ho 2 , Er 2 , TbY, TbGd) featuring a covalent lanthanide-lanthanide bond. The lanthanide spins are glued together by very strong exchange interactions between 4f moments and a single electron residing on the metal–metal bonding orbital. Tb 2 @C 80 (CH 2 Ph) shows a gigantic coercivity of 8.2 Tesla at 5 K and a high 100-s blocking temperature of magnetization of 25.2 K. The Ln-Ln bonding orbital in Ln 2 @C 80 (CH 2 Ph) is redox active, enabling electrochemical tuning of the magnetism.
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    Divalent EuRh 2 Si 2 as a reference for the Luttinger theorem and antiferromagnetism in trivalent heavy-fermion YbRh 2 Si 2
    (London : Nature Publishing Group, 2019) Güttler, M.; Generalov, A.; Fujimori, S.I.; Kummer, K.; Chikina, A.; Seiro, S.; Danzenbächer, S.; Koroteev, Y.M.; Chulkov, E.V.; Radovic, M.; Shi, M.; Plumb, N.C.; Laubschat, C.; Allen, J.W.; Krellner, C.; Geibel, C.; Vyalikh, D.V.
    Application of the Luttinger theorem to the Kondo lattice YbRh 2 Si 2 suggests that its large 4f-derived Fermi surface (FS) in the paramagnetic (PM) regime should be similar in shape and volume to that of the divalent local-moment antiferromagnet (AFM) EuRh 2 Si 2 in its PM regime. Here we show by angle-resolved photoemission spectroscopy that paramagnetic EuRh 2 Si 2 has a large FS essentially similar to the one seen in YbRh 2 Si 2 down to 1 K. In EuRh 2 Si 2 the onset of AFM order below 24.5 K induces an extensive fragmentation of the FS due to Brillouin zone folding, intersection and resulting hybridization of the Fermi-surface sheets. Our results on EuRh 2 Si 2 indicate that the formation of the AFM state in YbRh 2 Si 2 is very likely also connected with similar changes in the FS, which have to be taken into account in the controversial analysis and discussion of anomalies observed at the quantum critical point in this system.
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    Imperceptible magnetoelectronics
    (London : Nature Publishing Group, 2015) Melzer, Michael; Kaltenbrunner, Martin; Makarov, Denys; Karnaushenko, Dmitriy; Karnaushenko, Daniil; Sekitani, Tsuyoshi; Someya, Takao; Schmidt, Oliver G.
    Future electronic skin aims to mimic nature’s original both in functionality and appearance. Although some of the multifaceted properties of human skin may remain exclusive to the biological system, electronics opens a unique path that leads beyond imitation and could equip us with unfamiliar senses. Here we demonstrate giant magnetoresistive sensor foils with high sensitivity, unmatched flexibility and mechanical endurance. They are <2 μm thick, extremely flexible (bending radii <3 μm), lightweight (≈3 g m−2) and wearable as imperceptible magneto-sensitive skin that enables proximity detection, navigation and touchless control. On elastomeric supports, they can be stretched uniaxially or biaxially, reaching strains of >270% and endure over 1,000 cycles without fatigue. These ultrathin magnetic field sensors readily conform to ubiquitous objects including human skin and offer a new sense for soft robotics, safety and healthcare monitoring, consumer electronics and electronic skin devices.
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    Purely antiferromagnetic magnetoelectric random access memory
    (London : Nature Publishing Group, 2017) Kosub, Tobias; Kopte, Martin; Hühne, Ruben; Appel, Patrick; Shields, Brendan; Maletinsky, Patrick; Hübner, René; Liedke, Maciej Oskar; Fassbender, Jürgen; Schmidt, Oliver G.; Makarov, Denys
    Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.
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    Wavelength-tunable sources of entangled photons interfaced with atomic vapours
    (London : Nature Publishing Group, 2016) Trotta, Rinaldo; Martín-Sánchez, Javier; Wildmann, Johannes S.; Piredda, Giovanni; Reindl, Marcus; Schimpf, Christian; Zallo, Eugenio; Stroj, Sandra; Edlinger, Johannes; Rastelli, Armando
    The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled photons. A single semiconductor quantum dot is one of the most attractive, as it can generate indistinguishable entangled photons deterministically and is compatible with current photonic-integration technologies. However, the lack of control over the energy of the entangled photons is hampering the exploitation of dissimilar quantum dots in protocols requiring the teleportation of quantum entanglement over remote locations. Here we introduce quantum dot-based sources of polarization-entangled photons whose energy can be tuned via three-directional strain engineering without degrading the degree of entanglement of the photon pairs. As a test-bench for quantum communication, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using optoelectronic devices.
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    Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries
    (London : Nature Publishing Group, 2016) Ly, Thuc Hue; Perello, David J.; Zhao, Jiong; Deng, Qingming; Kim, Hyun; Han, Gang Hee; Chae, Sang Hoon; Jeong, Hye Yun; Lee, Young Hee
    Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures and band dispersion relations that depend on the inter-domain misorientation angle. Here, we explore misorientation angle-dependent electrical transport at grain boundaries in monolayer MoS2 by correlating the atomic defect structures of measured devices analysed with transmission electron microscopy and first-principles calculations. Transmission electron microscopy indicates that grain boundaries are primarily composed of 5–7 dislocation cores with periodicity and additional complex defects formed at high angles, obeying the classical low-angle theory for angles <22°. The inter-domain mobility is minimized for angles <9° and increases nonlinearly by two orders of magnitude before saturating at ∼16 cm2 V−1 s−1 around misorientation angle≈20°. This trend is explained via grain-boundary electrostatic barriers estimated from density functional calculations and experimental tunnelling barrier heights, which are ≈0.5 eV at low angles and ≈0.15 eV at high angles (≥20°).
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    Orbital reconstruction in nonpolar tetravalent transition-metal oxide layers
    (London : Nature Publishing Group, 2015) Bogdanov, Nikolay A.; Katukuri, Vamshi M.; Romhányi, Judit; Yushankhai, Viktor; Kataev, Vladislav; Büchner, Bernd; van den Brink, Jeroen; Hozoi, Liviu
    A promising route to tailoring the electronic properties of quantum materials and devices rests on the idea of orbital engineering in multilayered oxide heterostructures. Here we show that the interplay of interlayer charge imbalance and ligand distortions provides a knob for tuning the sequence of electronic levels even in intrinsically stacked oxides. We resolve in this regard the d-level structure of layered Sr2IrO4 by electron spin resonance. While canonical ligand-field theory predicts g