2017, Hilmi, Isom, Lotnyk, Andriy, Gerlach, Jürgen W., Schumacher, Philipp, Rauschenbach, Bernd

An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.

2019, Schewski, R., Lion, K., Fiedler, A., Wouters, C., Popp, K., Levchenko, S.V., Schulz, T., Schmidbauer, M., Bin Anooz, S., Grüneberg, R., Galazka, Z., Wagner, G., Irmscher, K., Scheffler, M., Draxl, C., Albrecht, M.

We present a systematic study on the influence of the miscut orientation on structural and electronic properties in the homoepitaxial growth on off-oriented β-Ga2O3 (100) substrates by metalorganic chemical vapour phase epitaxy. Layers grown on (100) substrates with 6° miscut toward the [001⎯⎯] direction show high electron mobilities of about 90 cm2 V−1 s−1 at electron concentrations in the range of 1–2 × 1018 cm−3, while layers grown under identical conditions but with 6° miscut toward the [001] direction exhibit low electron mobilities of around 10 cm2 V−1 s−1. By using high-resolution scanning transmission electron microscopy and atomic force microscopy, we find significant differences in the surface morphologies of the substrates after annealing and of the layers in dependence on their miscut direction. While substrates with miscuts toward [001⎯⎯] exhibit monolayer steps terminated by (2⎯⎯01) facets, mainly bilayer steps are found for miscuts toward [001]. Epitaxial growth on both substrates occurs in step-flow mode. However, while layers on substrates with a miscut toward [001⎯⎯] are free of structural defects, those on substrates with a miscut toward [001] are completely twinned with respect to the substrate and show stacking mismatch boundaries. This twinning is promoted at step edges by transformation of the (001)-B facets into (2⎯⎯01) facets. Density functional theory calculations of stoichiometric low index surfaces show that the (2⎯⎯01) facet has the lowest surface energy following the (100) surface. We conclude that facet transformation at the step edges is driven by surface energy minimization for the two kinds of crystallographically inequivalent miscut orientations in the monoclinic lattice of β-Ga2O3.

2017, Schnepf, Max J., Mayer, Martin, Kuttner, Christian, Tebbe, Moritz, Wolf, Daniel, Dulle, Martin, Altantzis, Thomas, Formanek, Petr, Förster, Stephan, Bals, Sara, König, Tobias A. F., Fery, Andreas

Nanorattles are metallic core-shell particles with core and shell separated by a dielectric spacer. These nanorattles have been identified as a promising class of nanoparticles, due to their extraordinary high electric-field enhancement inside the cavity. Limiting factors are reproducibility and loss of axial symmetry owing to the movable metal core; movement of the core results in fluctuation of the nanocavity dimensions and commensurate variations in enhancement factor. We present a novel synthetic approach for the robust fixation of the central gold rod within a well-defined box, which results in an axisymmetric nanorattle. We determine the structure of the resulting axisymmetric nanorattles by advanced transmission electron microscopy (TEM) and small-angle X-ray scattering (SAXS). Optical absorption and scattering cross-sections obtained from UV-vis-NIR spectroscopy quantitatively agree with finite-difference time-domain (FDTD) simulations based on the structural model derived from SAXS. The predictions of high and homogenous field enhancement are evidenced by scanning TEM electron energy loss spectroscopy (STEM-EELS) measurement on single-particle level. Thus, comprehensive understanding of structural and optical properties is achieved for this class of nanoparticles, paving the way for photonic applications where a defined and robust unit cell is crucial.