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- ItemInfluence of Ar gas pressure on ion energy and charge state distributions in pulsed cathodic arc plasmas from Nb-Al cathodes studied with high time resolution(Bristol : IOP Publ., 2019) Zöhrer, Siegfried; Anders, André; Franz, RobertFor cathodic arcs, the cathode material is one of the most important determinants of plasma properties. Consequently, the cathode material - plasma relationship is of special interest in related fundamental research as well as in applications like the synthesis of thin films and coatings. In the latter, the use of multi-element cathodes in inert as well as reactive gas atmospheres is common practice. To further improve the physical understanding of cathodic arcs in such settings, we analyze ions in pulsed cathodic arc plasmas from Nb, Al and two composite Nb-Al cathodes with high time-resolution using a mass-energy-analyzer. The experiments were conducted in Ar atmosphere at total pressures of 0.04, 0.20 and 0.40 Pa, and are compared to earlier results in high vacuum at 10-4. In addition to examining the influence of Ar on ion properties and their cathode material dependence, the results are used to discuss physical concepts in cathodic arcs, like the gas-dynamic expansion of the cathode spot plasma, or the influence of charge exchange collisions of ions with neutrals. While such inelastic collisions e.g. with Ar atoms cause a reduction of charge states to mainly Al+ and Nb2+ at the highest pressure, Ar atoms also seem to take part in near-cathode processes. Ar ions in different time and energy regimes up to 150 eV were observed and compared to Nb and Al ions, showing overlapping velocity distributions for Nb, Al and Ar+ ions, but also Ar2+ ions faster than other ion species. © 2018 IOP Publishing Ltd.
- ItemUncovering the (un-)occupied electronic structure of a buried hybrid interface(Bristol : IOP Publ., 2019) Vempati, S.; Deinert, J.-C.; Gierster, L.; Bogner, L.; Richter, C.; Mutz, N.; Blumstengel, S.; Zykov, A.; Kowarik, S.; Garmshausen, Y.; Hildebrandt, J.; Hecht, S.; Stahler, J.The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determine the electronic structure of p-quinquephenyl pyridine (5P-Py) adsorbed on ZnO(1 0 -1 0). The parent anchoring group, pyridine, significantly lowers the work function by up to 2.9 eV and causes an occupied in-gap state (IGS) directly below the Fermi level E F . Adsorption of upright-standing 5P-Py also leads to a strong work function reduction of up to 2.1 eV and to a similar IGS. The latter is then used as an initial state for the transient population of three normally unoccupied molecular levels through optical excitation and, due to its localization right at the o/i interface, provides interfacial sensitivity, even for thick 5P-Py films. We observe two final states above the vacuum level and one bound state at around 2 eV above E F , which we attribute to the 5P-Py LUMO. By the separate study of anchoring group and organic dye combined with the exploitation of the occupied IGS for selective interfacial photoexcitation, this work provides a new pathway for characterizing the electronic structure at buried o/i interfaces. © 2019 IOP Publishing Ltd.